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Cu2ZnSn(S,Se)4 (CZTSSe) has attracted great interest in thin-film solar cells due to its excellent photoelectric performance in past decades, and recently is gradually expanding to the field of photodetectors. Here, the CZTSSe self-powered photodetector is prepared by using traditional photovoltaic device structure. Under zero bias, it exhibits the excellent performance with a maximum responsivity of 0.77 A W-1, a high detectivity of 8.78 × 1012 Jones, and a wide linear dynamic range of 103 dB. Very fast response speed with the rise/decay times of 0.576/1.792 µs, and ultra-high switching ratio of 3.54 × 105 are obtained. Comprehensive electrical and microstructure characterizations confirm that element diffusion among ITO, CdS, and CZTSSe layers not only optimizes band alignment of CdS/CZTSSe, but also suppresses the formation of interface defects. Such a suppression of interface defects and spike-like band alignment significantly inhibit carrier nonradiative recombination at interface and promote carrier transport capability. The low trap density in CZTSSe and low back contact barrier of CZTSSe/Mo could be responsible for the very fast response time of photodetector. This work definitely provides guidance for designing a high performance self-powered photodetector with high photoresponse, high switching ratio, fast response speed, and broad linear dynamic range.

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Usually, most studies focus on toxic gas and photosensors by using electrospinning and metal oxide polycrystalline SnO2 nanofibers (PNFs), while fewer studies discuss cell-material interactions and photoelectric effect. In this work, the controllable surface morphology and oxygen defect (VO) structure properties were provided to show the opportunity of metal oxide PNFs to convert photoenergy into bio-energy for bio-material applications. Using the photobiomodulation effect of defect-rich polycrystalline SnO2 nanofibers (PNFs) is the main idea to modulate the cell-material interactions, such as adhesion, growth direction, and reactive oxygen species (ROS) density. The VO structures, including out-of-plane oxygen defects (op-VO), bridge oxygen defects (b-VO), and in-plane oxygen defects (ip-VO), were studied using synchrotron analysis to investigate the electron transfer between the VO structures and conduction bands. These intragrain VO structures can be treated as generation-recombination centers, which can convert various photoenergies (365-520 nm) into different current levels that form distinct surface potential levels; this is referred to as the photoelectric effect. PNF conductivity was enhanced 53.6-fold by enlarging the grain size (410 nm2) by increasing the annealing temperature, which can improve the photoelectric effect. In vitro removal of reactive oxygen species (ROS) can be achieved by using the photoelectric effect of PNFs. Also, the viability and shape of human bone marrow mesenchymal stem cells (hMSCs-BM) were also influenced significantly by the photobiomodulation effect. The cell damage and survival rate can be prevented and enhanced by using PNFs; metal oxide nanofibers are no longer only environmental sensors but can also be a bio-material to convert the photoenergy into bio-energy for biomedical science applications.

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The insulator/semiconductor interface structure is the key to electric device performance, and much interest has been focused on understanding the origin of interfacial defects. However, with conventional techniques, it is difficult to analyze the interfacial atomic structure buried in the insulating film. Here, we reveal the atomic structure at the interface between an amorphous aluminum oxide and diamond using a developed electron energy analyzer for photoelectron holography. We find that the three-dimensional atomic structure of a C-O-Al-O-C bridge between two dimer rows of the hydrogen-terminated diamond surface. Our results demonstrate that photoelectron holography can be used to reveal the three-dimensional atomic structure of the interface between a crystal and an amorphous film. We also find that the photoelectron intensity originating from the C-O bonds is strongly related to the interfacial defect density. We anticipate significant progress in the study of amorphous/crystalline interfaces based on their three-dimensional atomic structures analysis.

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The power conversion efficiency of all-inorganic Sb2S3-on-Si two-terminal (2-T) monolithically integrated and four-terminal (4-T) mechanically stacked tandem solar cells are investigated. A one-dimensional solar cell capacitance simulator (SCAPS-1D) has been used to simulate the stand-alone antimony trisulfide (Sb2S3) top sub-cell, silicon (Si) bottom sub-cell, 2-T monolithic, and 4-T mechanically stacked tandem solar cells. The stand-alone sub-cells are optimized by extensive studies, including interface defects density, bulk defects density, absorber layer thickness, and series resistance. The power conversion efficiency (PCE) of simulated stand-alone sub-cells is compared and verified with the existing literature. A current matching condition is established to characterize the 2-T monolithic Sb2S3-on-Si tandem cell. A filtered spectrum has been utilized for bottom sub-cell measurement in the tandem solar cells. The best-simulated PCE of Sb2S3-on-Si 2-T monolithic and 4-T tandem cells is 30.22% and 29.30%, respectively. The simulation results presented in this paper open an opportunity for the scientific community to consider Sb2S3 as a potential top sub-cell material in Sb2S3-on-Si tandem solar cells with high PCE.

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Ultrasonic non-destructive evaluation in pulse-echo mode is used for the inspection of single-lap aluminum adhesive joints, which contain interface defects in bonding area. The aim of the research is to increase the probability of defect detection in addition to ensuring that the defect sizes are accurately estimated. To achieve this, this study explores additional ultrasonic features (not only amplitude) that could provide more accurate information about the quality of the structure and the presence of interface defects. In this work, two types of interface defects, namely inclusions and delaminations, were studied based on the extracted ultrasonic features in order to evaluate the expected feasibility of defect detection and the evaluation of its performance. In addition, an analysis of multiple interface reflections, which have been proved to improve detection in our previous works, was applied along with the extraction of various ultrasonic features, since it can increase the probability of defect detection. The ultrasonic features with the best performance for each defect type were identified and a comparative analysis was carried out, showing that it is more challenging to size inclusion-type defects compared to delaminations. The best performance is observed for the features such as peak-to-peak amplitude, ratio coefficients, absolute energy, absolute time of flight, mean value of the amplitude, standard deviation value, and variation coefficient for both types of defects. The maximum relative error of the defect size compared to the real one for these features is 16.9% for inclusions and 3.6% for delaminations, with minimum errors of 11.4% and 2.2%, respectively. In addition, it was determined that analysis of the data from repetitive reflections from the sample interface, namely, the aluminum-adhesive second and third reflections, that these contribute to an increase in the probability of defect detection.

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This work is a comprehensive literature overview in the area of probabilistic methods related to composite materials with components exhibiting hyper-elastic constitutive behavior. A practical area of potential applications is seen to be rubber, rubber-like, or even rubber-based heterogeneous media, which have a huge importance in civil, mechanical, environmental, and aerospace engineering. The overview proposed and related discussion starts with some general introductory remarks and a general overview of the theories and methods of hyper-elastic material with a special emphasis on the recent progress. Further, a detailed review of the current trends in probabilistic methods is provided, which is followed by a literature perspective on the theoretical, experimental, and numerical treatments of interphase composites. The most important part of this work is a discussion of the up-to-date methods and works that used the homogenization method and effective medium analysis. There is a specific focus on random composites with and without any interface defects, but the approaches recalled here may also serve as well in sensitivity analysis and optimization studies. This discussion may be especially helpful in all engineering analyses and models related to the reliability of elastomers, whose applicability range, which includes energy absorbers, automotive details, sportswear, and the elements of water supply networks, is still increasing, as well as areas where a stochastic response is the basis of some limit functions that are fundamental for such composites in structural health monitoring.

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Minimizing bulk and interfacial nonradiative recombination losses is key to further improving the photovoltaic performance of perovskite solar cells (PSC) but very challenging. Herein, we report a gradient dimensionality engineering to simultaneously passivate the bulk and interface defects of perovskite films. The 2D/3D heterojunction is skillfully constructed by the diffusion of an amphiphilic spacer cation from the interface to the bulk. The 2D/3D heterojunction engineering strategy has achieved multiple functions, including defect passivation, hole extraction improvement, and moisture stability enhancement. The introduction of tertiary butyl at the spacer cation should be responsible for increased film and device moisture stability. The device with 2D/3D heterojunction engineering delivers a promising efficiency of 22.54% with a high voltage of 1.186 V and high fill factor of 0.841, which benefits from significantly suppressed bulk and interfacial nonradiative recombination losses. Moreover, the modified devices demonstrate excellent light, thermal, and moisture stability over 1000 h. This work paves the way for the commercial application of perovskite photovoltaics.

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Based on nonequilibrium molecular dynamics (NEMD) and nonequilibrium Green's function simulations, the interfacial thermal conductance (ITC) of graphene/h-BN in-plane heterostructures with near-interface defects (monovacancy defects, 585 and f5f7 double-vacancy defects) is studied. Compared to pristine graphene/h-BN, all near-interface defects reduce the ITC of graphene/h-BN. However, differences in defective structures and the wrinkles induced by the defects cause significant discrepancies in heat transfer for defective graphene/h-BN. The stronger phonon scattering and phonon localization caused by the wider cross-section in defects and the larger wrinkles result in the double-vacancy defects having stronger energy hindrance effects than the monovacancy defects. In addition, the approximate cross-sections and wrinkles induced by the 585 and f5f7 double-vacancy defects provide approximate heat hindrance capability. The phonon transmission and vibrational density of states (VDOS) further confirm the above results. The double-vacancy defects in the near-interface region have lower low-frequency phonon transmission and VDOS values than the monovacancy defects, while the 585 and f5f7 double-vacancy defects have similar low-frequency phonon transmission and VDOS values at the near-interface region. This study provides physical insight into the thermal transport mechanisms in graphene/h-BN in-plane heterostructures with near-interface defects and provides design guidelines for related devices.

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Heterojunction Si solar cells exhibit notable performance degradation. We modeled this degradation by electronic defects getting generated by thermal activation across energy barriers over time. To analyze the physics of this degradation, we developed the SolDeg platform to simulate the dynamics of electronic defect generation. First, femtosecond molecular dynamics simulations were performed to create a-Si/c-Si stacks, using the machine learning-based Gaussian approximation potential. Second, we created shocked clusters by a cluster blaster method. Third, the shocked clusters were analyzed to identify which of them supported electronic defects. Fourth, the distribution of energy barriers that control the generation of these electronic defects was determined. Fifth, an accelerated Monte Carlo method was developed to simulate the thermally activated time-dependent defect generation across the barriers. Our main conclusions are as follows. (1) The degradation of a-Si/c-Si heterojunction solar cells via defect generation is controlled by a broad distribution of energy barriers. (2) We developed the SolDeg platform to track the microscopic dynamics of defect generation across this wide barrier distribution and determined the time-dependent defect density N(t) from femtoseconds to gigaseconds, over 24 orders of magnitude in time. (3) We have shown that a stretched exponential analytical form can successfully describe the defect generation N(t) over at least 10 orders of magnitude in time. (4) We found that in relative terms, Voc degrades at a rate of 0.2%/year over the first year, slowing with advancing time. (5) We developed the time correspondence curve to calibrate and validate the accelerated testing of solar cells. We found a compellingly simple scaling relationship between accelerated and normal times tnormal ∝ taccelT(accel)/T(normal). (6) We also carried out experimental studies of defect generation in a-Si:H/c-Si stacks. We found a relatively high degradation rate at early times that slowed considerably at longer time scales.

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The development of SnO2 and TiO2 polycrystalline nanofiber devices (PNFDs) has been widely researched as a method of protecting humans from household air pollution. PNFDs have three significant advantages. The nanofibers before the annealing process are polymer-rich materials, which can be used as particulate material (PM) filters. The multiporous nanofibers fabricated by the annealing process have numerous defects that can serve as generation-recombination centers for electron-hole pairs, enabling the PNFDs to serve as multiple-wavelength light (from 365 to 940 nm) detectors. Lastly, the numerous surface/interface defects can drastically enhance the toxic gas detection ability. The toxic gas detection range of PNFDs for CO(g) and NO(g) is from 400 to 50 ppm and 400 to 50 ppb, respectively. Quick response times and recovery properties are key parameters for commercial applications. The recovery time of NO(g) detection can be improved from 1 ks to 40 s and the PNFD operating temperature lowered to 50 °C. These results indicate that SnO2 and TiO2 PNFDs have good potential for commercialization and use as toxic gas and photon sensors in daily lives.

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Silicon-based tandem solar cells incorporating low-cost, abundant, and non-toxic metal oxide materials can increase the conversion efficiency of silicon solar cells beyond their conventional limitations with obvious economic and environmental benefits. In this work, the electrical characteristics of a metal oxide thin-film heterojunction solar cell based on a cuprous oxide (Cu2O) absorber layer were investigated. Highly Al-doped n-type ZnO (AZO) and undoped p-type Cu2O thin films were prepared on quartz substrates by magnetron sputter deposition. The electrical and optical properties of these thin films were determined from Hall effect measurements and spectroscopic ellipsometry. After annealing the Cu2O film at 900 °C, the majority carrier (hole) mobility and the resistivity were measured at 50 cm²/V·s and 200 Ω·cm, respectively. Numerical modeling was carried out to investigate the effect of band alignment and interface defects on the electrical characteristics of the AZO/Cu2O heterojunction. The analysis suggests that the incorporation of a buffer layer can enhance the performance of the heterojunction solar cell as a result of reduced conduction band offset.

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Ag2 S@CdS core-shell particles were synthesized with different Cd source content as a measure of shell thickness using a pulsed microwave irradiation method. The particles were verified structurally using X-ray diffraction, energy dispersive X-ray analysis and transmission electron microscopy. Optical spectroscopy revealed that core-shells show an absorption peak at 750 nm and an emission peak located around 800 nm after 6 min of microwave irradiation. With continued microwave treatment, the NIR luminescence first vanished but it was revived after 12 min of irradiation, which was 100 nm red shifted. This new type of NIR emission in Ag2 S with sizes greater than 5 nm is due to the proximity of a highly deficient CdS shell with strong red emission that was stable for more than 6 months in water. A mechanism has been suggested for this type of emission.

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The electronic properties of the HfO2/MoS2 interface were investigated using multifrequency capacitance-voltage (C-V) and current-voltage characterization of top-gated MoS2 metal-oxide-semiconductor field effect transistors (MOSFETs). The analysis was performed on few layer (5-10) MoS2 MOSFETs fabricated using photolithographic patterning with 13 and 8 nm HfO2 gate oxide layers formed by atomic layer deposition after in-situ UV-O3 surface functionalization. The impedance response of the HfO2/MoS2 gate stack indicates the existence of specific defects at the interface, which exhibited either a frequency-dependent distortion similar to conventional Si MOSFETs with unpassivated silicon dangling bonds or a frequency dispersion over the entire voltage range corresponding to depletion of the HfO2/MoS2 surface, consistent with interface traps distributed over a range of energy levels. The interface defects density (Dit) was extracted from the C-V responses by the high-low frequency and the multiple-frequency extraction methods, where a Dit peak value of 1.2 × 1013 cm-2 eV-1 was extracted for a device (7-layer MoS2 and 13 nm HfO2) exhibiting a behavior approximating to a single trap response. The MoS2 MOSFET with 4-layer MoS2 and 8 nm HfO2 gave Dit values ranging from 2 × 1011 to 2 × 1013 cm-2 eV-1 across the energy range corresponding to depletion near the HfO2/MoS2 interface. The gate current was below 10-7 A/cm2 across the full bias sweep for both samples indicating continuous HfO2 films resulting from the combined UV ozone and HfO2 deposition process. The results demonstrated that impedance spectroscopy applied to relatively simple top-gated transistor test structures provides an approach to investigate electrically active defects at the HfO2/MoS2 interface and should be applicable to alternative TMD materials, surface treatments, and gate oxides as an interface defect metrology tool in the development of TMD-based MOSFETs.

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Yttrium-doped barium zirconate (BZY) thin films recently showed surprising electric transport properties. Experimental investigations conducted mainly by electrochemical impedance spectroscopy suggested that a consistent part of this BZY conductivity is of protonic nature. These results have stimulated further investigations by local unconventional techniques. Here, we use electrochemical strain microscopy (ESM) to detect electrochemical activity in BZY films with nanoscale resolution. ESM in a novel cross-sectional measuring setup allows the direct visualization of the interfacial activity. The local electrochemical investigation is compared with the structural studies performed by state of art scanning transmission electron microscopy (STEM). The ESM and STEM results show a clear correlation between the conductivity and the interface structural defects. We propose a physical model based on a misfit dislocation network that introduces a novel 2D transport phenomenon, whose fingerprint is the low activation energy measured.