RESUMEN
The dependency of device degradation on bending direction and channel length is analyzed in terms of bandgap states in amorphous indium-gallium-zinc-oxide (a-IGZO) films. The strain distribution in an a-IGZO film under perpendicular and parallel bending of a device with various channel lengths is investigated by conducting a three-dimensional mechanical simulation. Based on the obtained strain distribution, new device simulation structures are suggested in which the active layer is defined as consisting of multiple regions. The different arrangements of a highly strained region and density of states is proportional to the strain account for the measurement tendency. The analysis performed using the proposed structures reveals the causes underlying the effects of different bending directions and channel lengths, which cannot be explained using the existing simulation methods in which the active layer is defined as a single region.
RESUMEN
Solution-processed metal-oxide thin-film transistors (TFTs) are considered as one of the most favorable devices for next-generation, large-area flexible electronics. In this paper, we demonstrate the excellent material properties of lanthanum-zinc oxide (LaZnO) thin films deposited by spray pyrolysis and their application to TFTs. The threshold voltage of the LaZnO TFTs shifts toward positive gate voltage, and the mobility decreases with increasing lanthanum ratio in ZnO from 0 to 20%. The purification of the LaZnO precursor (P-LaZnO) further improves the device performance. The P-LaZnO TFT exhibits a field-effect mobility of 22.43 cm2 V-1 s-1, zero hysteresis voltage, and negligible threshold voltage VTH shift under positive bias temperature stress. The enhancement in the electrical properties is due to a decrease in grain size, smooth surface roughness, and reduction in the trap density in the LaZnO film. X-ray photoelectron spectroscopy (XPS) results confirm the presence of La in the TFT channel and at/near the interface of the LaZnO and ZrOx gate insulator, leading to fewer interfacial traps. The flexible P-LaZnO TFT fabricated on the polyimide substrate exhibits a mobility of 17.64 cm2 V-1 s-1 and a negligible VTH shift under bias stress. Also, the inverter made of LZO TFTs is working well with a voltage gain of 17.74 (V/V) at 4 V. Therefore, the LaZnO TFT is a promising device for next-generation flexible displays.
RESUMEN
The effects of micro-hole arrays in the thin metal films were studied as a method to release bending stress in flexible electrodes and flexible thin film transistors (TFTs). Interest in flexible electronics is increasing, and many approaches have been suggested to solve the issue of the electrical failure of electrodes or electrical components such as TFTs after repeated bending. Here, we demonstrate a micro-hole array structure as a common solution to release bending stress. Although micro-size cracks were generated and propagated from the hole edges, the cracks stopped within a certain range when enough stress was released. Moreover, since the crack sites were predictable and controllable, a fatal electrical breakdown in a conductive layer such as a metal electrode or the semiconducting junction of a TFT can be prevented by specifically arranging the hole arrays. Thin film layers fabricated without holes suffered an electrical breakdown due to random crack propagation during bending tests. Aluminum thin film electrodes prepared with arrays of 3 µm diameter holes and 25% hole area showed excellent durability after 300,000 bending cycles. The change in resistance was below 3%. The electrical characteristics of an a-IGZO TFT with the micro-hole structure were almost equivalent to a standard a-IGZO TFT. After 10,000 bending cycles, ION and the ratio of ION/IOFF remained >107 A and â¼107, respectively. Since the effective hole diameter is micrometer in size, fabrication does not require additional process steps or expensive process equipment. Therefore, the approach can be an important way to enhance the reliability of various electrical devices in flexible and wearable applications.
RESUMEN
Thin-film transistors (TFTs) with high electrical performances (mobility > 10 cm2/V s, Vth < 1 V, SS < 1 V/decade, on/off ratio ≈ 106) obtained from the silicon- and oxide-based single-crystalline semiconductor materials require high processing temperature and hence are not suitable for flexible electronics. Amorphous oxide-based transparent electronic devices are attractive to meet emerging technological demands where crystalline oxide-/silicon-based architectures cannot provide a solution. Here, we tackle this problem by using a novel amorphous oxide semiconducting material-namely, indium tungsten oxide (IWO)-as the active channel in flexible TFTs (FTFTs). Post-annealing temperature as low as 270 °C for amorphous IWO thin films deposited by radio frequency sputtering at room temperature could result in smooth morphology ( Rrms ≈ 0.42 nm), good adhesion, and high carrier density ( n ≈ 7.19 × 1018 cm-3). Excellent TFT characteristics of flexible devices could be achieved with linear field effect mobility µFE ≈ 25.86 cm2/V s, subthreshold swing SS ≈ 0.30 V/decade, threshold voltage Vth ≈ -1.5 V, and on/off ratio Ion/ Ioff ≈ 5.6 × 105 at 3 V and stable operation during bending of the FTFT. Additionally, IWO TFTs were implemented as synapses, the building block for neuromorphic computing. Paired-pulse facilitation up to 138% was observed and showed an exponential decay resembling chemical synapses. Utilizing this characteristic, a high-pass dynamic temporal filter was devised providing increased gain from 1.55 to 21 when frequency was raised from 22 to 62 Hz. The high performance and stability of flexible TFTs obtained with IWO films demonstrate their promise for low-voltage electronic applications.
RESUMEN
We suggest thermal treatment with static magnetic fields (SMFs) or rotating magnetic fields (RMFs) as a new technique for the activation of indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). Magnetic interactions between metal atoms in IGZO films and oxygen atoms in air by SMFs or RMFs can be expected to enhance metal-oxide (M-O) bonds, even at low temperature (150 °C), through attraction of metal and oxygen atoms having their magnetic moments aligned in the same direction. Compared to IGZO TFTs with only thermal treatment at 300 °C, IGZO TFTs under an RMF (1150 rpm) at 150 °C show superior or comparable characteristics: field-effect mobility of 12.68 cm2 V-1 s-1, subthreshold swing of 0.37 V dec-1, and on/off ratio of 1.86 × 108. Although IGZO TFTs under an SMF (0 rpm) can be activated at 150 °C, the electrical performance is further improved in IGZO TFTs under an RMF (1150 rpm). These improvements of IGZO TFTs under an RMF (1150 rpm) are induced by increases in the number of M-O bonds due to enhancement of the magnetic interaction per unit time as the rpm value increases. We suggest that this new process of activating IGZO TFTs at low temperature widens the choice of substrates in flexible or transparent devices.