Effect of Static and Rotating Magnetic Fields on Low-Temperature Fabrication of InGaZnO Thin-Film Transistors.

Park, Jeong Woo; Tak, Young Jun; Na, Jae Won; Lee, Heesoo; Kim, Won-Gi; Kim, Hyun Jae

Park, Jeong Woo; Tak, Young Jun; Na, Jae Won; Lee, Heesoo; Kim, Won-Gi; Kim, Hyun Jae.

Afiliación

Park JW; School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Republic of Korea.
Tak YJ; School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Republic of Korea.
Na JW; School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Republic of Korea.
Lee H; School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Republic of Korea.
Kim WG; School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Republic of Korea.
Kim HJ; School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Republic of Korea.

ACS Appl Mater Interfaces ; 10(19): 16613-16622, 2018 May 16.

Article en En | MEDLINE | ID: mdl-29682960

Palabras clave

InGaZnO; ferromagnetism; flexible thin-film transistor; magnetic moment; oxygen vacancy; static and rotating magnetic field

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2018 Tipo del documento: Article Pais de publicación: Estados Unidos

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