New Simulation Method for Dependency of Device Degradation on Bending Direction and Channel Length.

Choi, Yunyeong; Park, Jisun; Shin, Hyungsoon

Choi, Yunyeong; Park, Jisun; Shin, Hyungsoon.

Afiliación

Choi Y; Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Korea.
Park J; Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Korea.
Shin H; Graduate Program in Smart Factory, Ewha Womans University, Seoul 03760, Korea.

Materials (Basel) ; 14(20)2021 Oct 18.

Article en En | MEDLINE | ID: mdl-34683758

Palabras clave

amorphous indium-gallium-zinc-oxide (a-IGZO); bending stress; channel length dependency; device simulation; flexible thin-film transistor (TFT); oxide TFT; strain simulation

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2021 Tipo del documento: Article Pais de publicación: Suiza

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