RESUMEN

The failure mechanism of thermal gate oxide in silicon carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs), whether it is field-driven breakdown or charge-driven breakdown, has always been a controversial topic. Previous studies have demonstrated that the failure time of thermally grown silicon dioxide (SiO2) on SiC stressed with a constant voltage is indicated as charge driven rather than field driven through the observation of Weibull Slope ß. Considering the importance of the accurate failure mechanism for the thermal gate oxide lifetime prediction model of time-dependent dielectric breakdown (TDDB), charge-driven breakdown needs to be further fundamentally justified. In this work, the charge-to-breakdown (QBD) of the thermal gate oxide in a type of commercial planar SiC power MOSFETs, under the constant current stress (CCS), constant voltage stress (CVS), and pulsed voltage stress (PVS) are extracted, respectively. A mathematical electron trapping model in thermal SiO2 grown on single crystal silicon (Si) under CCS, which was proposed by M. Liang et al., is proven to work equally well with thermal SiO2 grown on SiC and used to deduce the QBD model of the device under test (DUT). Compared with the QBD obtained under the three stress conditions, the charge-driven breakdown mechanism is validated in the thermal gate oxide of SiC power MOSFETs.

RESUMEN

This study investigated the mediating effect of Triethanolamine on Fe@C-Rhodobacter sphaeroides hybrid photosynthetic system to achieve efficient biohydrogen production. The biocompatible Fe@C generates excited electrons upon exposure to light, releasing ferrum for nitrogenase synthesis, and regulating the pH of the fermentation environment. Triethanolamine was introduced to optimize the electron transfer chain, thereby improving system stability, prolonging electron lifespan, and facilitating ferrum corrosion. This, in turn, stimulated the lactic acid synthetic metabolic pathway of Rhodobacter sphaeroides, resulting in increased reducing power in the biohybrid system. The ternary coupling system was analyzed through the regulation of concentration, initial pH, and light intensity. The system achieved the highest total H2 production of 5410.9 mL/L, 1.29 times higher than the control (2360.5 mL/L). This research provides a valuable strategy for constructing ferrum-carbon-based composite-cellular biohybrid systems for photo-fermentation H2 production.

Asunto(s)

RESUMEN

A single photon avalanche diode (SPAD) cell using N-channel extended-drain metal oxide semiconductor (N-EDMOS) is tested for its hot-carrier damage (HCD) resistance. The stressing gate-voltage (VGS) dependence is compared to hot-hole (HH) injection, positive bias temperature (PBT) instability and off-mode (VGS = 0). The goal was to check an accurate device lifetime extraction using accelerated DC to AC stressing by applying the quasi-static (QS) lifetime technique. N-EDMOS device is devoted to 3D bonding with CMOS imagers obtained by an optimized process with an effective gate-length Leff = 0.25 µm and a SiO2 gate-oxide thickness Tox = 5 nm. The operating frequency is 10 MHz at maximum supply voltage VDDmax = 5.5 V. TCAD simulations are used to determine the real voltage and timing configurations for the device in a mixed structure of the SPAD cell. AC device lifetime is obtained using worst-case DC accelerating degradation, which is transferred by QS technique to the AC waveforms applied to N-EDMOS device. This allows us to accurately obtain the AC device lifetime as a function of the delay and load for a fixed pulse shape. It shows the predominance of the high energy hot-carriers involved in the first substrate current peak during transients.

RESUMEN

Inspired by its great success in the photovoltaic field, methylammonium lead iodide perovskite (MAPbI3 ) has recently been actively explored as photocatalysts in H2 evolution reactions. However, the practical application of MAPbI3 photocatalysts remains hampered by the intrinsically fast trapping and recombination of photogenerated charges. Herein, we propose a novel strategy of regulating the distribution of defective areas to promote charge-transfer dynamics of MAPbI3 photocatalysts. By deliberately designing and synthesizing the MAPbI3 photocatalysts featuring a unique continuation of defective areas, we demonstrate that such a feature enables retardation of charge trapping and recombination via lengthening the charge-transfer distance. As an outcome, such MAPbI3 photocatalysts turn out to achieve an impressive photocatalytic H2 evolution rate as high as 0.64 mmol ⋅ g-1 ⋅ h-1 , one order of magnitude higher than that of the conventional MAPbI3 photocatalysts. This work establishes a new paradigm for controlling charge-transfer dynamics in photocatalysis.

RESUMEN

Pharmaceutical contaminations in the water resources becomes very serious global environmental issue. Therefore, these pharmaceutical molecules should be removed from the water resources. In the current work, 3D/3D/2D-Co3O4/TiO2/rGO nanostructures were synthesized through a facile self-assembly-assisted solvothermal method for an effective removal of pharmaceutical contaminations. The nanocomposite was finely optimized through the response surface methodology (RSM) technique with different initial reaction parameters and different molar ratios. Various characterization techniques were used to understand the physical and chemical properties of 3D/3D/2D heterojunction and its photocatalytic performance. The degradation performance of ternary nanostructure was rapidly increased owing formation of 3D/3D/2D heterojunction nanochannels. The 2D-rGO nanosheets play an essential role in trapping photoexcited charge carriers to reduce the recombination process rapidly as confirmed by photoluminescence analysis. Tetracycline and ibuprofen were used as model carcinogen molecules to examine the degradation efficiency of Co3O4/TiO2/rGO under visible light irradiation using halogen lamp. The intermediates produced during the degradation process were studied using LC-TOF/MS analysis. The pharmaceutical molecules tetracycline and ibuprofen follows pseudo first order kinetics model. The photodegradation results show that the 6:4 M ratio of Co3O4:TiO2 with 5% rGO exhibits 12.4 times and 12.3 higher degradation ability than pristine Co3O4 nanostructures against tetracycline and ibuprofen, respectively. These results shows high efficiency of Co3O4/TiO2/rGO composite against the degradation of tetracycline and ibuprofen.

Asunto(s)

RESUMEN

Conjugated polymer field-effect transistors are emerging as an enabling technology for flexible electronics due to their excellent mechanical properties combined with sufficiently high charge-carrier mobilities and compatibility with large-area, low-temperature processing. However, their electrical stability remains a concern. ON-state (accumulation mode) bias-stress instabilities in organic semiconductors have been widely studied, and multiple mitigation strategies have been suggested. In contrast, OFF-state (depletion mode) bias-stress instabilities remain poorly understood despite being crucial for many applications in which the transistors are held in their OFF-state for most of the time. Here, a simple method of using an antisolvent treatment is presented to achieve significant improvements in OFF-state bias-stress and environmental stability as well as general device performance for one of the best performing polymers, solution-processable indacenodithiophene-co-benzothiadiazole (IDT-BT). IDT-BT is weakly crystalline, and the notable improvements to an antisolvent-induced, increased degree of crystallinity, resulting in a lower probability of electron trapping and the removal of charge traps is attributed. The work highlights the importance of the microstructure in weakly crystalline polymer films and offers a simple processing strategy for achieving the reliability required for applications in flexible electronics.

RESUMEN

The photocurrent multiplication (PM) effect has been used to boost the device performance of polymer-based photodetectors (PDs), but its origin is rarely addressed. In this study, the origins of the PM effect in polymer PDs based on the P3HT:PC71 BM bulk heterojunction (BHJ) composite thin film, where P3HT is poly(3-hexylthiophene), and PC71 BM is [6,6]phenyl-C71 -butyric acid methyl ester, through both computational simulation and experimental investigation are reported. Systematic studies indicate that two key factors play an important role in the realization of the PM effect in polymer PDs. One factor is the work function of the metal electrode, and the other is the PC71 BM aggregations at the interface between the P3HT:PC71 BM BHJ composite thin film and the metal electrode. Moreover, the results from both experimental and computational simulation indicate that the values of the current density under light illumination minus the current density in the dark of polymer PDs are increased simultaneously along with the reduction of the thickness of the P3HT:PC71 BM BHJ composite thin film. The results provide an understanding of the PM effect in polymer PDs and guidance for the development of high-performance polymer PDs based on BHJ composite thin film.

Asunto(s)

RESUMEN

In recent years, high-performance acetone gas sensors have attracted great attention for their potential in noninvasive blood glucose monitoring. In this work, black TiO2(B-TiO2) was introduced as an electron trapping layer between TiO2and ZnO to form TiO2@B-TiO2@ZnO core-shell nanoparticles, through a simple and safe method. The acetone sensing performance of TiO2@B-TiO2@ZnO varied with the thickness of ZnO. Because of the electron trapping effect of the introduced B-TiO2layer, the best performing sample exhibited a low optimal operating temperature of 275 °C and a high response of 49.25-50 ppm acetone. In addition, a low detection limit of 170 ppb was obtained. The pretty selectivity of the sample was also been proved. The mechanism of enhanced acetone response was explained by the energy band-based model of TiO2@B-TiO2@ZnO core-shell nanoparticle and depletion layer theory.

RESUMEN

BiVO4 is one of the most promising photoanode candidates to achieve high-efficiency water splitting. However, overwhelming charge recombination at the interface limits its water oxidation activity. In this study, we show that the water oxidation activity of the BiVO4 photoanode is significantly boosted by the TiO2 overlayer prepared by atomic layer deposition. With a TiO2 overlayer of an optimized thickness, the photocurrent at 1.23 VRHE increased from 0.64 to 1.1 mA·cm-2 under front illumination corresponding to 72% enhancement. We attribute this substantial improvement to enhanced charge separation and suppression of surface recombination due to surface-state passivation. We provide direct evidence via transient photocurrent measurements that the TiO2 overlayer significantly decreases the photogenerated electron-trapping process at the BiVO4 surface. Electron-trapping passivation leads to enhanced electron photoconductivity, which results in higher photocurrent enhancement under front illumination rather than back illumination. This feature can be particularly useful for wireless tandem devices for water splitting as the higher band gap photoanodes are typically utilized with front illumination in such configurations. Even though the electron-trapping process is eliminated completely at higher TiO2 overlayer thicknesses, the charge-transfer resistance at the surface also increases significantly, resulting in a diminished photocurrent. We demonstrate that the ultrathin TiO2 overlayer can be used to fine tune the surface properties of BiVO4 and may be used for similar purposes for other photoelectrode systems and other photoelectrocatalytic reactions.

RESUMEN

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

RESUMEN

Multiple experiments provide evidence for photovoltaic, catalytic, optoelectronic, and plasmonic processes involving hot, i.e., high energy, electrons in nanoscale materials. However, the mechanisms of such processes remain elusive, because electrons rapidly lose energy by relaxation through dense manifolds of states. We demonstrate a long-lived hot electron state in a Pt nanocluster adsorbed on the MoS2 substrate. For this purpose, we develop a simulation technique, combining classical molecular dynamics based on machine learning potentials with ab initio nonadiabatic molecular dynamics and real-time time-dependent density functional theory. Choosing Pt20/MoS2 as a prototypical system, we find frequent shifting of a top atom in the Pt particle occurring on a 50 ps time scale. The distortion breaks particle symmetry and creates unsaturated chemical bonds. The lifetime of the localized state associated with the broken bonds is enhanced by a factor of 3. Hot electrons aggregate near the shifted atom and form a catalytic reaction center. Our findings prove that distortion of even a single atom can have important implications for nanoscale catalysis and plasmonics and provide insights for utilizing machine learning potentials to accelerate ab initio investigations of excited state dynamics in condensed matter systems.

RESUMEN

Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). Poly-Si 1T-DRAM enables the cost-effective implementation of a silicon-on-insulator (SOI) structure and a three-dimensional (3D) stacked architecture for increasing integration density. However, studies on the transient characteristics of poly-Si 1T-DRAM are still lacking. In this paper, with TCAD simulation, we examine the differences between the memory mechanisms in poly-Si and silicon body 1T-DRAM. A silicon 1T-DRAM cell's data state is determined by the number of holes stored in a floating body (FB), while a poly-Si 1T-DRAM cell's state depends on the number of electrons trapped in its grain boundary (GB). This means that a poly-Si 1T-DRAM can perform memory operations by using GB as a storage region in thin body devices with a small FB area.

RESUMEN

Understanding the ultrafast interfacial electron transfer (IET) process is essential for establishing the structure-property relationship of the semiconductor/cocatalyst system for photocatalytic H2 evolution. However, the IET kinetics for the near bandgap excitation has not been reported. Herein, we investigate the IET kinetics of g-C3N4/Pt as a semiconductor/cocatalyst prototype by femtosecond time-resolved diffuse reflectance spectroscopy. We find that the near bandgap excitation of g-C3N4 inhibits the IET of g-C3N4/Pt due to electron deep trapping, resulting in a markedly decreased apparent quantum efficiency for photocatalytic H2 evolution. This work complements the kinetic understanding for the photocatalytic mechanism of the semiconductor/cocatalyst system in its whole light absorption range.

RESUMEN

A 3D flower-like mesoporous Ce doped ZnO composite composed of nanosheets was prepared by a facile, one-step wet chemical method at room temperature. It was found that the moderate Ce doping can improve the light absorption of ZnO. The photocatalytic activities of the samples were studied by the degradation of Rhodamine B (RhB) and phenol under stimulated sunlight. The 1% mole ratio of Ce doped ZnO composites (denoted as CZ1) showed higher photocatalytic performance than other samples, where 85.1% of RhB and 69.6% of phenol can be removed within 125 min and 120 min, respectively. The Ce4+ doped in the lattice of ZnO can act as the electron trapping sites, which effectively improve the electron-hole separation. In addition, it was also found the annealing temperature had effect on the morphology and structure of Ce doped ZnO. The photocatalytic performance can be further enhanced at proper annealing temperature (500 °C) due to the increase of ZnO crystallinity with maintained flower-like structure and the formation of CeO2-ZnO heterojunction at their tight interface promoting the separation of photogenerated electron-hole pairs.

RESUMEN

The effect of oxygen content on current-stress-induced instability was investigated in bottom-gate amorphous InGaZnO (a-IGZO) thin-film transistors. The observed positive threshold voltage shift (ΔVT) was dominated by electron trapping in the gate insulator (GI), whereas it was compensated by donor creation in a-IGZO active regions when both current flows and a high lateral electric field were present. Stress-induced ΔVT increased with increasing oxygen content irrespective of the type of stress because oxygen content influenced GI quality, i.e., higher density of GI electron traps, as well as typical direct current (DC) performance like threshold voltage, mobility, and subthreshold swing. It was also found that self-heating became another important mechanism, especially when the vertical electric field and channel current were the same, independent of the oxygen content. The increased ΔVT with oxygen content under positive gate bias stress, positive gate and drain bias stress, and target current stress was consistently explained by considering a combination of the density of GI electron traps, electric field relaxation, and self-heating-assisted electron trapping.

RESUMEN

A series of electropolymerizable cyclometallated IrIII complexes were synthesized and their electrochemical and photophysical properties studied. The triphenylamine electropolymerizable fragment was introduced by using triphenylamine-2-phenylpyridine and, respectively, triphenylamine-benzothiazole as cyclometalated ligands. The coordination sphere was completed by two differently substituted ß-ketoiminate ligands deriving from the condensation of acetylacetone or hexafluoroacetylacetone with para-bromoaniline. The influence of the -CH3 /-CF3 substitution to the electrochemical and photophysical properties was investigated. Both complexes with CH3 substituted ß-ketoiminate were emissive in solution and in solid state. Highly stable films were electrodeposited onto ITO coated glass substrates. Their emission was quenched by electron trapping within the polymeric network as proven by electrochemical studies. The -CF3 substitution of the ß-ketoiminate leads instead to the quenching of the emission and inhibits electropolymerization.

RESUMEN

The insulation of mineral oil-based nanofluids was found to vary with different concentration level of nanoparticles. However, the mechanisms behind this research finding are not well studied. In this paper, mineral oil-based nanofluids were prepared by suspending TiO2 nanoparticles with weight percentages ranging from 0.0057% to 0.0681%. The breakdown voltage and chop time of nanofluids were observed under standard lightning impulse waveform. The experimental results show that the presence of TiO2 nanoparticles increases the breakdown voltage of mineral oil under positive polarity. The enhancement of breakdown strength tends to saturate when the concentration of nanoparticle exceeds 0.0227 wt%. Electronic traps formed at the interfacial region of nanoparticles, which could capture fast electrons in bulk oil and reduce the net density of space charge in front of prebreakdown streamers, are responsible for the breakdown strength enhancement. When the particle concentration level is higher, the overlap of Gouy-Chapman diffusion layers results in the saturation of trap density in nanofluids. Consequently, the breakdown strength of nanofluids is saturated. Under negative polarity, the electrons are likely to be scattered by the nanoparticles on the way towards the anode, resulting in enhanced electric fields near the streamer tip and the decrement of breakdown voltage.

RESUMEN

In this study, we performed a quantum chemical molecular dynamics (QM/MD) simulation to investigate the space charge accumulation process in copolymers of polyethylene (PE) with ethylene acrylic acid (EAA), ethylene vinyl acetate (EVA), styrene-ethylene-butadiene-styrene (SEBS), and black carbon (BC). We predicted that BC, especially branched BC, would possess the highest electron affinity and is identified as the most promising filler in power cable insulation. Following incorporations of 0-4 high-energy electrons into the composites, branched BC exhibited the highest stability and almost all electrons were trapped by it. Therefore, PE was protected efficiently and BC can be considered as an efficient filler for high voltage cables and an inhibitor of tree formation. On the contrary, although EAA, EVA, and SEBS can trap high-energy electrons, the latter can be supersaturated in composites of EAA, EVA, and SEBS with PE. The inserted polymers was unavoidably destroyed following C-H and C-O bond cleavage, which results from the interactions and charge transfer between PE and inserted polymers. The content effects of -COOH, benzene, and -OCOCH3 groups on the electron trapping, mobility and stability of PE were also investigated systematically. We hope this knowledge gained from this work will be helpful in understanding the role of inserted polymers and the growth mechanisms of electrical treeing in high voltage cable insulation.

RESUMEN

A highly flexible resistive switching (RS) memory was fabricated in the Al/TiO2/Al/polyimide structure using a simple and cost-effective method. An electronic-resistive-switching-based flexible memory with high performance that can withstand a bending strain of up to 3.6% was obtained. The RS properties showed no obvious degradation even after the bending tests that were conducted up to 10 000 times, and over 4000 writing/erasing cycles were confirmed at the maximally bent state. The superior electrical properties against the mechanical stress of the device can be ascribed to the electronic RS mechanism related to electron trapping/detrapping, which can prevent the inevitable degradation in the case of the RS related with the ionic defects.

RESUMEN

We report the first observation of negative photoconductance (NPC) in n- and p-doped Si nanowire field-effect transistors (FETs) and demonstrate the strong influence of doping concentrations on the nonconventional optical switching of the devices. Furthermore, we show that the NPC of Si nanowire FETs is dependent on the wavelength of visible light due to the phonon-assisted excitation to multiple conduction bands with different band gap energies that would be a distinct optoelectronic property of indirect band gap semiconductor. We attribute the main driving force of NPC in Si nanowire FETs to the photogenerated hot electrons trapping by dopants ions and interfacial states. Finally, comparing back- and top-gate modulation, we derive the mechanisms of the transition between negative and positive photoconductance regimes in nanowire devices. The transition is decided by the competition between the light-induced interfacial trapping and the recombination of mobile carriers, which is dependent on the light intensity and the doping concentration.