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Negative Photoconductance in Heavily Doped Si Nanowire Field-Effect Transistors.
Baek, Eunhye; Rim, Taiuk; Schütt, Julian; Baek, Chang-Ki; Kim, Kihyun; Baraban, Larysa; Cuniberti, Gianaurelio.
Afiliación
  • Baek E; Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden , 01062 Dresden, Germany.
  • Rim T; Department of Creative IT Engineering, Pohang University of Science and Technology , 37673 Pohang, Korea.
  • Schütt J; Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden , 01062 Dresden, Germany.
  • Baek CK; Department of Creative IT Engineering, Pohang University of Science and Technology , 37673 Pohang, Korea.
  • Kim K; Department of Creative IT Engineering, Pohang University of Science and Technology , 37673 Pohang, Korea.
  • Baraban L; Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden , 01062 Dresden, Germany.
  • Cuniberti G; Center for Advancing Electronics Dresden, TU Dresden , 01062 Dresden, Germany.
Nano Lett ; 17(11): 6727-6734, 2017 11 08.
Article en En | MEDLINE | ID: mdl-28961014
We report the first observation of negative photoconductance (NPC) in n- and p-doped Si nanowire field-effect transistors (FETs) and demonstrate the strong influence of doping concentrations on the nonconventional optical switching of the devices. Furthermore, we show that the NPC of Si nanowire FETs is dependent on the wavelength of visible light due to the phonon-assisted excitation to multiple conduction bands with different band gap energies that would be a distinct optoelectronic property of indirect band gap semiconductor. We attribute the main driving force of NPC in Si nanowire FETs to the photogenerated hot electrons trapping by dopants ions and interfacial states. Finally, comparing back- and top-gate modulation, we derive the mechanisms of the transition between negative and positive photoconductance regimes in nanowire devices. The transition is decided by the competition between the light-induced interfacial trapping and the recombination of mobile carriers, which is dependent on the light intensity and the doping concentration.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2017 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Estados Unidos
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2017 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Estados Unidos