Analysis of Threshold Voltage Shift for Full V<sub>GS</sub>/V<sub>DS</sub>/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors.

Kim, Je-Hyuk; Jang, Jun Tae; Bae, Jong-Ho; Choi, Sung-Jin; Kim, Dong Myong; Kim, Changwook; Kim, Yoon; Kim, Dae Hwan

Analysis of Threshold Voltage Shift for Full V_GS/V_DS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors.

Kim, Je-Hyuk; Jang, Jun Tae; Bae, Jong-Ho; Choi, Sung-Jin; Kim, Dong Myong; Kim, Changwook; Kim, Yoon; Kim, Dae Hwan.

Afiliación

Kim JH; The School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
Jang JT; The School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
Bae JH; The School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
Choi SJ; The School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
Kim DM; The School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
Kim C; Circadian ICT Research Center, Kookmin University, Seoul 02707, Korea.
Kim Y; The School of Electrical and Computer Engineering, University of Seoul, Seoul 02504, Korea.
Kim DH; The School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.

Micromachines (Basel) ; 12(3)2021 Mar 19.

Article en En | MEDLINE | ID: mdl-33808738

Palabras clave

donor-like state creation; electron trapping; hole trapping; indium-gallium-zinc-oxide thin-film transistors (-IGZO TFT); instability; oxygen content

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2021 Tipo del documento: Article Pais de publicación: Suiza

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