RESUMEN
The current memory system is facing obstacles to improvement, and ReRAM is considered a powerful alternative. All-inorganic α-CsPbI3 perovskite-based ReRAM working by electrochemical mechanism is reported, but the electrochemically active electrode raised difficulty in long-term stable operation, and bulk α-CsPbI3 device can not show resistive switching behavior with an inert metal top electrode. Herein, by making the α-CsPbI3 into QDs and applying it to the device with inert Au as the top electrode, the devices working by valence change mechanism are successfully fabricated. The large surface-to-volume ratio made an abundant amount of iodine vacancies and facile migration of vacancies allowed the device to work by valence change mechanism. The devices show reliable electrical characteristics, 800 cycles endurance and retention for over 4 × 104 s, and air stability for 1 month. This work demonstrates that applying the QDs can improve the stability and enable a new type of working mechanism in ReRAM.
RESUMEN
Substantial progress has been made in perovskite light-emitting diodes (PeLEDs), but the fabrication of high-performance blue PeLEDs still remains a challenge due to its low efficiency, spectral instability and short operational lifetime. How to produce an efficient and stable blue PeLED is the key to realizing the application of PeLEDs in full-color displays. We herein report a blue PeLED usint the ligand-assisted reprecipitation method, in which phenylethylammonium bromide (PEABr) was used as ligands, and chloroform was used as anti-solvent to prepare blue perovskite nanocrystal films. By increasing the PEABr content from 40% to 100% (The ratio of x% PEABr refers to the molar ratio between PEABr and PbBr2), the film quality is highly improved, and the emission exhibits a blue shift. Introducing a poly(9-vinylcarbazole) (PVK) hole transport layer into the device, the PVK layer can not only achieve efficient hole injection, but can also isolate the PEDOT: PSS layer to inhibit the non-radiative recombination of metal halide luminescence layer, reduce surface ion defects and successfully inhibit halide atom migration. Finally, the PeLED presents a stable electroluminescence under different driving voltages without any red shift.
RESUMEN
Write-once-read-many-times (WORM) memory belonging to an important non-volatile memory type achieves the read-only state after the write operation and is used in the fields of data security storage widely. WORM memory has been developed based on a variety of materials. In recent years, halide perovskites have become the research hotspot material for this memory due to its excellent properties. Here, the all-inorganic CsPbBr3 perovskite thin film was prepared on a FTO substrate by using a two-step method. The prepared CsPbBr3 thin films have the characteristics of densely packed crystal grains and smooth surface. The device, having the FTO/CsPbBr3/Al sandwich structure by evaporating the Al electrode onto the CsPbBr3 thin film, represents the typical WORM behavior, with long data retention time (104 s), a low operation voltage (2.1 V) and a low reading voltage (0.1 V). Additionally, the resistance transition mechanism of the resulting WORM devices was analyzed.
RESUMEN
Ensuring the stability of all-inorganic halide perovskite light-emitting diodes (LEDs) has become an obstacle that needs to be broken for commercial applications. Currently, lead halide perovskite CsPbX3 (X = Br, I, Cl) nanocrystals (NCs) are considered as alternative materials for future fluorescent lighting devices due to their combination of superior optical and electronic properties. However, the temperature of the surface of the LEDs will increase after long-term power-on work, which greatly affects the optical stability of CsPbX3 NCs. In order to overcome this bottleneck issue, a strategy of annealing perovskite materials in liquid is proposed, and the changes in photoluminescence and electroluminescence (EL) behaviors before and after annealing are studied. The results show that the luminescence stability of the annealed perovskite materials is significantly improved. Moreover, the EL stability of different perovskite LED devices under long-term operation is monitored, and the performance of the annealed materials is particularly outstanding. The results have proved that this convenient and low-cost liquid annealing strategy is suitable for large-scale postprocessing of perovskite materials, granting them stable fluorescence emission, which will bring a new dawn to the commercialization of next-generation optoelectronic devices.
RESUMEN
Recently, organometallic and all-inorganic halide perovskites (HPs) have become promising materials for resistive switching (RS) nonvolatile memory devices with low power consumption because they show current-voltage hysteresis caused by fast ion migration. However, the toxicity and environmental pollution potential of lead, a common constituent of HPs, has limited the commercial applications of HP-based devices. Here, RS memory devices based on lead-free all-inorganic cesium tin iodide (CsSnI3) perovskites with temperature tolerance are successfully fabricated. The devices exhibit reproducible and reliable bipolar RS characteristics in both Ag and Au top electrodes (TEs) with different switching mechanisms. The Ag TE devices show filamentary RS behavior with ultralow operating voltages (<0.15 V). In contrast, the Au TE devices have interface-type RS behavior with gradual resistance changes. This suggests that the RS characteristics are attributed to either the formation of metal filaments or the ion migration of defects in HPs under applied electric fields. These distinct mechanisms may permit the opportunity to design devices for specific purposes. This work will pave the way for lead-free all-inorganic HP-based nonvolatile memory for commercial application in HP-based devices.