Two-Terminal Nonvolatile Write-Once-Read-Many-Times Memory Based on All-Inorganic Halide Perovskite.

Yu, Zhipeng; Zhao, Xiaofeng; Ai, Chunpeng; Fang, Xin; Zhao, Xiaohan; Wang, Yanchao; Zhang, Hongquan

Yu, Zhipeng; Zhao, Xiaofeng; Ai, Chunpeng; Fang, Xin; Zhao, Xiaohan; Wang, Yanchao; Zhang, Hongquan.

Afiliación

Yu Z; Heilongjiang Provincial Key Laboratory of Micro-Nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China.
Zhao X; Heilongjiang Provincial Key Laboratory of Micro-Nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China.
Ai C; Heilongjiang Provincial Key Laboratory of Micro-Nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China.
Fang X; Heilongjiang Provincial Key Laboratory of Micro-Nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China.
Zhao X; Heilongjiang Provincial Key Laboratory of Micro-Nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China.
Wang Y; Heilongjiang Provincial Key Laboratory of Micro-Nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China.
Zhang H; Heilongjiang Provincial Key Laboratory of Micro-Nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China.

Micromachines (Basel) ; 14(1)2022 Dec 29.

Article en En | MEDLINE | ID: mdl-36677154

Palabras clave

all-inorganic halide perovskite; memory; write-once-read-many-times (WORM)

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2022 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza

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