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1.
Beilstein J Nanotechnol ; 13: 1284-1291, 2022.
Artigo em Inglês | MEDLINE | ID: mdl-36447564

RESUMO

In this work, the electronic transport properties of Te roll-like nanostructures were investigated in a broad temperature range by fabricating single-nanostructure back-gated field-effect-transistors via photolithography. These one-dimensional nanostructures, with a unique roll-like morphology, were produced by a facile synthesis and extensively studied by scanning and transmission electron microscopy. The nanostructures are made of pure and crystalline Tellurium with trigonal structure (t-Te), and exhibit p-type conductivity with enhanced field-effect hole mobility between 273 cm2/Vs at 320 K and 881 cm2/Vs at 5 K. The thermal ionization of shallow acceptors, with small ionization energy between 2 and 4 meV, leads to free-hole conduction at high temperatures. The free-hole mobility follows a negative power-law temperature behavior, with an exponent between -1.28 and -1.42, indicating strong phonon scattering in this temperature range. At lower temperatures, the electronic conduction is dominated by nearest-neighbor hopping (NNH) conduction in the acceptor band, with a small activation energy E NNH ≈ 0.6 meV and an acceptor concentration of N A ≈ 1 × 1016 cm-3. These results demonstrate the enhanced electrical properties of these nanostructures, with a small disorder, and superior quality for nanodevice applications.

2.
Molecules ; 27(18)2022 Sep 06.
Artigo em Inglês | MEDLINE | ID: mdl-36144505

RESUMO

The temperature dependence of the electrical properties of composites formed by biphasic sodium titanate and poly(o-methoxyaniline) (Na2Ti3O7/Na2Ti6O13/POMA) with different concentrations of POMA (0%, 1%, 10%, 15%, 35% and 50%) in the ceramic matrix was determined from measurements of complex impedance. The structural details were studied by means of X-ray diffraction, confirming the formation of the Na2Ti3O7/Na2Ti6O13/POMA composites. The displacement of the (200) reflection from 2θ = 10.45° to 11.15° in the composites with 10 and 15% of POMA suggested the partial replacement of H+ for Na+ in the Na2Ti3O7 structure. The thermal properties were investigated by Thermogravimetry and Differential Thermal Analysis. The Thermogravimetry curves of the composites with POMA content of 1, 10 and 15% presented profiles similar to that of pure sodium titanate sample. The composites with 35 and 50% of POMA showed a process at temperatures around 60-70 °C, which was associated with water absorbed by the polymer. The analysis of the complex impedance spectroscopy measurements revealed that the electrical resistivity of the composites in the range from 0 to 35% increased by two orders of magnitude, with different values for each concentration. This positive temperature coefficient of resistivity was less noticeable in the composite with highest POMA mass content (50%). The rapid increase in resistivity caused an increase in the relaxation time calculated from the time domain. The electrical response of the 50% of POMA compound changes in relation to what was observed in the other compounds, which suggests that there is a saturation limit in the increase in resistivity with POMA content.


Assuntos
Polímeros , Titânio , Óxidos , Polímeros/química , Ácidos Polimetacrílicos , Temperatura , Água
3.
Nanotechnology ; 33(16)2022 Jan 24.
Artigo em Inglês | MEDLINE | ID: mdl-34983039

RESUMO

Unstrained GaAs quantum dots are promising candidates for quantum information devices due to their optical properties, but their electronic properties have remained relatively unexplored until now. In this work, we systematically investigate the electronic structure and natural charging of GaAs quantum dots at room temperature using Kelvin probe force microscopy (KPFM). We observe a clear electrical signal from these structures demonstrating a lower surface potential in the middle of the dot. We ascribe this to charge accumulation and confinement inside these structures. Our systematical investigation reveals that the change in surface potential is larger for a nominal dot filling of 2 nm and then starts to decrease for thicker GaAs layers. Usingk·pcalculation, we show that the confinement comes from the band bending due to the surface Fermi level pinning. We find a correlation between the calculated charge density and the KPFM signal indicating thatk·pcalculations could be used to estimate the KPFM signal for a given structure. Our results suggest that these self-assembled structures could be used to study physical phenomena connected to charged quantum dots like Coulomb blockade or Kondo effect.

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