RESUMO
We present a theoretical investigation of the electronic structure of rutile (metallic) and M_{1} and M_{2} monoclinic (insulating) phases of VO_{2} employing a fully self-consistent combination of density functional theory and embedded dynamical mean field theory calculations. We describe the electronic structure of the metallic and both insulating phases of VO_{2}, and propose a distinct mechanism for the gap opening. We show that Mott physics plays an essential role in all phases of VO_{2}: undimerized vanadium atoms undergo classical Mott transition through local moment formation (in the M_{2} phase), while strong superexchange within V dimers adds significant dynamic intersite correlations, which remove the singularity of self-energy for dimerized V atoms. The resulting transition from rutile to dimerized M_{1} phase is adiabatically connected to the Peierls-like transition, but is better characterized as the Mott transition in the presence of strong intersite exchange. As a consequence of Mott physics, the gap in the dimerized M_{1} phase is temperature dependent. The sole increase of electronic temperature collapses the gap, reminiscent of recent experiments.
RESUMO
We investigate, from first principles calculations, the magnetic properties of planar carbon nitride structures with the lowest formation energies within twenty eight distinct stoichiometries and porosities. Surprisingly, we find that 3/4 of the low-energy carbon nitride structures present energetically favorable magnetic phases, and that more than 3/10 are ferromagnetic. This suggests that d(0) magnetism is a usual feature in this class of materials. Notably, within the energetically favorable ferromagnetic structures, we find that two structures have very high stabilization energies for ferromagnetic order, one having the highest predicted so far for this class of materials. We also find that several structures are half-metals, and one structure is half-zero-gap semiconductor (semicondutor in one spin channel, and graphene-like in the other channel).
RESUMO
We investigate by means of ab-initio simulations the formation energy and the electronic properties of substitutional N doping in graphene with distinct grain boundary defects as a function of the N concentration. Our results show that the presence of substitutional N atoms along the defective regions is quite likely for several N concentrations. Also, we find either semiconducting or metallic structures, depending on the N concentration. Confinement effects were also investigated for the semiconducting structures. We find that the distance between the defect lines can modulate the band structure of those semiconducting N doped lines. This opens an interesting possibility to produce two-dimensional heterojunctions composed by N doped grain boundaries with different distances between the defect lines.
RESUMO
We have performed an ab initio investigation of the energetic, structural, electronic, and vibrational properties of Au atoms and clusters adsorbed on poly-p-phenylene vinylene (PPV) chains, Au(n)/PPV (with n = 1, 2, 6, 7, 10, and 12). We find that the Au(n)/PPV systems are energetically stable by 0.5 eV, compared with the isolated systems, viz., PPV chain and Au(n) clusters, thus supporting the formation of Au(n)/PPV nanocomposites. Further support to the formation of Au(n)/PPV has been provided by examining the vibrational properties of pristine PPV and Au(n)/PPV systems. In agreement with experimental measurements, we find a reduction on the in-plane vibrational frequency of C-C bonds of Au(n)/PPV, when compared with the same vibrational modes of pristine PPV. The electronic properties of isolated Au(n) clusters are modified when adsorbed on PPV. The highest occupied states of Au(n)/PPV are mostly concentrated on the Au(n) cluster, while the lowest unoccupied states are mainly localized along the PPV chain. The HOMO-LUMO energy gap of the Au(n)/PPV systems are smaller than the energy gap of the isolated systems, Au(n) clusters, and pristime PPV chains.