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Sonodynamic therapy (SDT) relies heavily on the presence of oxygen to induce cell death. Its effectiveness is thus diminished in the hypoxic regions of tumor tissue. To address this issue, the exploration of ultrasound-based synergistic treatment modalities has become a significant research focus. Here, we report an ultrasonic cavitation effect enhanced sonodynamic and 1208 nm photo-induced cancer treatment strategy based on thermoelectric/piezoelectric oxygen-defect bismuth oxychloride nanosheets (BNs) to realize the high-performance eradication of tumors. Upon ultrasonic irradiation, the local high temperature and high pressure generated by the ultrasonic cavitation effect combined with the thermoelectric and piezoelectric effects of BNs create a built-in electric field. This facilitates the separation of carriers, increasing their mobility and extending their lifetimes, thereby greatly improving the effectiveness of SDT and NIR-Ⅱ phototherapy on hypoxia. The Tween-20 modified BNs (TBNs) demonstrate ∼88.6 % elimination rate against deep-seated tumor cells under hypoxic conditions. In vivo experiments confirm the excellent antitumor efficacy of TBNs, achieving complete tumor elimination within 10 days with no recurrences. Furthermore, due to the high X-ray attenuation of Bi and excellent NIR-Ⅱ absorption, TBNs enable precise cancer diagnosis through photoacoustic (PA) imaging and computed tomography (CT).

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Thermoelectric generators held great promise through energy harvesting from waste heat. Their practical application, however, is greatly constrained by poor raw material utilization and tedious processing in fabricating desired shapes. Herein, a state-of-the-art process is reported for 3D printing the half-Heusler (Nb0.88Hf0.12FeSb) thermoelectric material using laser powder bed fusion (LPBF). The multi-dimensional intra- and inter-granular defects created by this process greatly suppress thermal conductivity by providing numerous phonon scattering centers. The resulting LPBF-fabricated half-Heusler exhibits a high figure of merit ≈1.2 at 923 K and a single-leg maximum efficiency of ≈3.3% at a temperature difference (ΔT) of 371 K. Hafnium oxide nanoparticles generated during LPBF effectively prevent crack propagation, ensuring competent mechanical performance and reliable thermoelectric output. The findings highlight the significant potential of LPBF in driving the next industrial revolution of highly efficient and customizable thermoelectric materials.

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In the development of wearable electronic devices, the composite modification of conductive polymers and single-walled carbon nanotubes (SWCNTs) has become a burgeoning research area. This study presents the synthesis of a novel polythiophene derivative, poly(3-alkoxythiophene) (P3(TEG)T), with alkoxy side chains. Different molecular weight variants of P3(TEG)T (P1-P4) were prepared and combined with SWCNTs to form composite materials. Density functional theory (DFT) calculations revealed a reduced bandgap for P3(TEG)T. Raman spectroscopy demonstrated π-π interactions between P3(TEG)T and SWCNTs, facilitating the dispersion of single-walled carbon nanotubes and the formation of a continuous conductive network. Among the composite films, P4/SWCNTs-0.9 exhibited the highest thermoelectric performance, with a power factor (PF) value of 449.50 µW m-1 K-2. The fabricated flexible thermoelectric device achieved an output power of 3976.92 nW at 50 K, with a tensile strength of 59.34 MPa for P4/SWCNTs. Our findings highlight the strong interfacial interactions between P3(TEG)T and SWCNTs in the composite material, providing an effective charge transfer pathway. Furthermore, an improvement in the tensile performance was observed with an increase in the molecular weight of the polymer used in the composite, offering a viable platform for the development of high-performance flexible organic thermoelectric materials.

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Conjugated polymers (CPs) are widely used as conductive materials in various applications, with their conductive properties adjustable through chemical doping. While doping enhances the thermoelectric properties of CPs due to improved main-chain transport, overdoping can distort the polymer structure, increasing energy disorder and impeding intrinsic electrical transport. This study explored how different dopants affect the structural integrity and electrical transport properties of CPs. We found that dopants vary in their impact on CP structure, consequently altering their electrical transport capabilities. Specifically, ferric chloride (FeCl3)-doped indacenodithiophene-co-benzothiadiazole (IDTBT) shows superior electrical transport properties to triethyloxonium hexachloroantimonate (OA)-doped IDTBT due to enhanced backbone planarity and rigidity, which facilitate carrier transport and lower energetic disorder. These results highlight the critical role of dopant selection in optimizing CPs for advanced applications, suggesting that strategic dopant choices can significantly refine the charge transport characteristics of CPs, paving the way for their industrialization.

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Non-stoichiometric permingeatites Cu3+mSbSe4 (-0.04 ≤ m ≤ -0.02) were synthesized, and their thermoelectric properties were examined depending on the Cu deficiency. Phase analysis by X-ray diffraction revealed no detection of secondary phases. Due to Cu deficiency, the lattice parameters of tetragonal permingeatite decreased compared to the stoichiometric permingeatite, resulting in a = 0.5654-0.5654 nm and c = 1.1253-1.1254 nm, with a decrease in the c/a ratio in the range of 1.9901-1.9903. Electrical conductivity exhibited typical semiconductor behavior of increasing conductivity with temperature, and above 423 K, the electrical conductivity of all samples exceeded that of stoichiometric permingeatite; Cu2.96SbSe4 exhibited a maximum of 9.8 × 103 Sm-1 at 623 K. The Seebeck coefficient decreased due to Cu deficiency, showing p-type semiconductor behavior similar to stoichiometric permingeatite, with majority carriers being holes. Thermal conductivity showed negative temperature dependence, and both electronic and lattice thermal conductivities increased due to Cu deficiency. Despite the decrease in the Seebeck coefficient due to Cu deficiency, the electrical conductivity increased, resulting in an increase in the power factor (especially a great increase at high temperatures), with Cu2.97SbSe4 exhibiting the highest value of 0.72 mWm-1K-2 at 573 K. As the carrier concentration increased due to Cu deficiency, the thermal conductivity increased, but the increase in power factor was significant, with Cu2.98SbSe4 recording a maximum dimensionless figure-of-merit of 0.50 at 523 K. This value was approximately 28% higher than that (0.39) of stoichiometric Cu3SbSe4.

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The present study outlines the preparation of a ternary nanocomposite film comprising of polyaniline doped with camphor sulfonic acid (PANI), reduced graphene oxide (rGO), and graphitic carbon nitride (g-C3N4), and delves into its thermoelectric performance. PANI is known to possess high electrical conductivity (σ) and poor thermal conductivity (κ). However, its potential for thermoelectric applications is constrained by the low value of the Seebeck coefficient (S). The incorporation of g-C3N4 in PANI has been demonstrated to result in an improvement of the Seebeck coefficient. Furthermore, the addition of rGO to the PANI/g-C3N4 sample counteracts the decrease in electrical conductivity. The PANI/g-C3N4/rGO ternary nanocomposite film exhibits an enhanced Seebeck coefficient of ~2.2 times when compared to the PANI sample. The Seebeck coefficient of the PANI/g-C3N4/rGO nanocomposite is enhanced by the energy filtering effect that occurs at the interfaces between g-C3N4/PANI and PANI/rGO. The π-π interaction between the PANI chains and rGO is responsible for the increased electrical conductivity resulting from the well-ordered polymer chain arrangement on the g-C3N4 and rGO surfaces. The ternary nanocomposite sample demonstrated a synergistic improvement in both electrical conductivity and Seebeck coefficient, resulting in a remarkable ~4.6-fold increment in power factor and an ~4.3-fold enhancement in the figure of merit (zT), as compared to the pristine PANI film. .

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CoSb3-based skutterudites have great potential as midtemperature thermoelectric (TE) materials due to their low cost and excellent electrical and mechanical properties. Their application, however, is limited by the high thermal conductivity and the degradation of TE performance at elevated temperatures, attributed to the adverse effects of bipolar diffusion. Herein, a series of SeyCo4Sb12-xTex compounds were successfully synthesized by combining a solid-state reaction and spark plasma sintering techniques to mitigate these challenges. It was found that doping Te at the Sb sites effectively enhanced the carrier concentration and suppressed the bipolar effect to obtain a superior power factor of ∼43 µW cm-1 K-2. Furthermore, due to the low resonant frequency of Se, filling voids of CoSb3 with Se achieved a low lattice thermal conductivity of 1.55 W m-1 K-1. Nevertheless, Se filling introduced additional holes, reducing the carrier concentration without a significant detriment of the carrier mobility. As a result, a maximum figure of merit of 1.23 was achieved for Se0.1Co4Sb11.55Te0.45 at 773 K. This work provides a valuable guidance for selecting appropriate filling and doping components to achieve synergistic optimization of the acoustics and electronics of CoSb3-based skutterudites.

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Cu2Se is an attractive thermoelectric material due to its layered structure, low cost, environmental compatibility, and non-toxicity. These traits make it a promising replacement for conventional thermoelectric materials in large-scale applications. This study focuses on preparing Cu2Se flexible thin films through in situ magnetron sputtering technology while carefully optimizing key preparation parameters, and explores the physical mechanism of thermoelectric property enhancement, especially the power factor. The films are deposited onto flexible polyimide substrates. Experimental findings demonstrate that films grown at a base temperature of 200 °C exhibit favorable performance. Furthermore, annealing heat treatment effectively regulates the Cu element content in the film samples, which reduces carrier concentration and enhances the Seebeck coefficient, ultimately improving the power factor of the materials. Compared to the unannealed samples, the sample annealed at 300 °C exhibited a significant increase in room temperature Seebeck coefficient, rising from 9.13 µVK-1 to 26.73 µVK-1. Concurrently, the power factor improved from 0.33 µWcm-1K-2 to 1.43 µWcm-1K-2.

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We investigated the thermoelectric and thermal behavior of Fe-V-W-Al-based thin films prepared using the radio frequency magnetron sputtering technique at different oxygen pressures (0.1-1.0 × 10-2 Pa) and on different substrates (n, p, and undoped Si). Interestingly, at lower oxygen pressure, formation of a bcc-type Heusler structure was observed in deposited samples, whereas at higher oxygen pressure, we have noted the development of an amorphous structure in these samples. Our findings indicate that the moderately oxidized Fe-V-W-Al amorphous thin film deposited on the n-Si substrate possesses a large magnitude of S ∼ -1098 ± 100 µV K-1 near room temperature, which is almost double the previously reported value for thin films. Additionally, the power factor (PF) indicated an enormously large value of ∼33.9 mW m-1 K-2 near 320 K. The thermal conductivity of the amorphous thin film is also found to be 2.75 Wm-1 K-1, which is quite lower compared to bulk alloys. As a result, the maximum figure of merit is estimated to be extremely high, i.e., ∼3.9 near 320 K, which is among one of the highest reported values so far. The anomalously large value of Seebeck coefficient and PF has been ascribed to the unusual composite effect of the metallic amorphous oxide phase and insulating substrate possessing a large Seebeck coefficient.

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In the present era, the energy sector is undergoing an intense transformation, which encourages numerous research efforts aimed at reducing and reusing energy waste. One of the main areas of focus is thermoelectric energy, where telluride compounds have attracted researchers due to their remarkable ability to convert thermal energy into electrical energy. We focused this study on finding out how well strontium telluride (SrTe) can be used to generate thermoelectric power by testing it under up to 10% compression strain. We have used advanced computational approaches to increase the accuracy of our results, specifically the HSE hybrid functional with the Wannier interpolation method. This method is primarily employed to analyze electronic properties; however, our research extends its utility to investigate thermoelectric characteristics. Our findings provide accurate predictions for both electronic and thermoelectric properties. The above method has successfully achieved a significant improvement of 58% in the electronic band gap value, resulting in a value of 2.83 eV, which closely matches the experimental results. Furthermore, the Figure of Merit 0.95 is obtained, which is close to the ideal range. Both the band gap value and the thermoelectric figure of merit decrease when the compression strain is increased. These findings emphasize the importance of using SrTe under specific conditions. The findings of this work provide motivation for future researchers to investigate the environmental changes in the thermoelectric potential of SrTe.

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Environmental-friendless and high-performance thermoelectrics play a significant role in exploring sustainable clean energy. Among them, AgSbTe2 thermoelectrics, benefiting from the disorder in the cation sublattice and interface scattering from secondary phases of Ag2Te and Sb2Te3, exhibit low thermal conductivity and a maximum figure-of-merit ZT of 2.6 at 573 K via optimizing electrical properties and addressing phase transition issues. Therefore, AgSbTe2 shows considerable potential as a promising medium-temperature thermoelectric material. Additionally, with the increasing demands for device integration and portability in the information age, the research on flexible and wearable AgSbTe2 thermoelectrics aligns with contemporary development needs, leading to a growing number of research findings. This work provides a detailed and timely review of AgSbTe2-based thermoelectrics from materials to devices. Principles and performance optimization strategies are highlighted for the thermoelectric performance enhancement in AgSbTe2. The current challenges and future research directions of AgSbTe2-based thermoelectrics are pointed out. This review will guide the development of high-performance AgSbTe2-based thermoelectrics for practical applications.

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Doping narrow-gap semiconductors is a well-established approach for designing efficient thermoelectric materials. Semiconducting half-Heusler (HH) and full-Heusler (FH) compounds have garnered significant interest within the thermoelectric field, yet the number of exceptional candidates remains relatively small. It is recently shown that the vacancy-filling approach is a viable strategy for expanding the Heusler family. Here, a range of near-semiconducting Heuslers, TiFexCuySb, creating a composition continuum that adheres to the Slater-Pauling electron counting rule are theoretically designed and experimentally synthesized. The stochastic and incomplete occupation of vacancy sites within these materials imparts continuously changing electrical conductivities, ranging from a good semiconductor with low carrier concentration in the endpoint TiFe0.67Cu0.33Sb to a heavily doped p-type semiconductor with a stoichiometry of TiFe1.00Cu0.20Sb. The optimal thermoelectric performance is experimentally observed in the intermediate compound TiFe0.80Cu0.28Sb, achieving a peak figure of merit of 0.87 at 923 K. These findings demonstrate that vacancy-filling Heusler compounds offer substantial opportunities for developing advanced thermoelectric materials.

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Effects of thermal cycling on the microstructure and thermoelectric properties are studied for the undoped and Na-doped SnSe samples using X-ray computed tomography and property measurements. It is observed that thermal cycling causes significant cracks to develop, which decrease both the electrical and lattice thermal conductivities but do not affect the thermopower. The zT values are drastically reduced after the repeated heat treatment. It is important to account for density changes during cycling to obtain accurate values of the thermal conductivity. Even before thermal cycling, the spark-plasma sintered (SPS) samples have a significant number of microcracks. The orientation of cracks within the SPS pellets and their effect on the microstructure are influenced by the presence of a Na-rich impurity. The SnSe and Sn0.995Na0.005Se samples without the impurity develop cracks and exhibit grain growth parallel to the pellet surface, which is also the plane of the 2D SnSe layers. The Sn0.97Na0.03Se sample containing the impurity develops cracks that are orthogonal to the pellet surface. Such an orientation of cracks in Sn0.97Na0.03Se inhibits grain growth. All samples appear mechanically unstable after thermal cycling.

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Introducing nanotwins in thermoelectric materials represents a promising approach to achieving such a synergistic combination of thermoelectric properties and mechanical properties. By increasing configurational entropy, a sharply reduced stacking fault energy in a new nanotwinned high-entropy semiconductor AgMnGePbSbTe5 is reached. Dense coherent nanotwin boundaries in this system provide an efficient phonon scattering barrier, leading to a high figure of merit ZT of ≈2.46 at 750 K and a high average ZT of ≈1.54 (300-823 K) with the presence of Ag2Te nanoprecipitate in the sample. More importantly, owing to the dislocation pinning caused by coherent nanotwin boundaries and the chemical short-range disorder caused by the high configurational entropy effect, AgMnGePbSbTe5 also exhibits robust mechanical properties, with flexural strength of 82 MPa and Vickers hardness of 210 HV.

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CONTEXT: Nowadays, Perovskite materials with diverse compositions and structures have garnered significant attention for their potential applications across various industrial and technological fields. Here, we investigated the structural, electronic, optical, thermodynamic, thermoelectric, and magnetic properties of perovskite PrFeO3 using density functional theory and Monte Carlo simulations. The optimization results demonstrate that the ferromagnetic phase is more stable than the antiferromagnetic phase. Under the GGA + SOC + U and GGA + mBJ approaches, the electronic results of the PrFeO3 compound expose the half-metallic and magnetic behavior. It was also demonstrated that introducing dilatation strain can effectively enhance both the mechanical and thermal stability of PrFeO3. Additionally, the optical properties show that this material has potential uses for solar cells because of its capacity to absorb light in the ultraviolet (UV) spectrum. The maximum values of the Seebeck coefficient reach 90 µV/K at 1000 K, indicating the potential of PrFeO3 as an efficient thermoelectric material. The magnetic properties exhibit a first transition of spin reorientation (TSR) at 171.44 K, followed by a second-order transition at 707.15 K. This investigation provides valuable insights into the unstudied aspect of Perovskite PrFeO3. METHODS: To carry out this investigation, we employed the density functional theory (DFT) implemented in the Wien2k package. To determine the exchange-correlation potential, we utilized the GGA-PBE (Perdew, Burke, and Ernzerhof) approach. The SOC was included based on the second-variational method using scalar relativistic wavefunctions, and electron-electron Coulomb interactions for Fe and Pr are considered in the rotationally invariant way GGA + SOC + U. In this paper, the effective parameter Ueff = U - J was adopted, where U and J stand for the Coulomb and exchange parameters, respectively. Also, we opted for the modified Becke-Johnson potential (mBJ) for comparison. The thermodynamic properties are obtained using the quasi-harmonic Debye model via Gibbs2 software programs. For the calculation of thermoelectric coefficients, a combination of first-principles band structure calculations and the Boltzmann transport theory within the rigid band approximation (RBA) and the constant scattering time approximation (CSTA) was employed, utilizing the BoltzTrap code. Subsequently, we delve into the magneto-caloric and magnetic properties by employing Monte Carlo simulations.

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Solar energy, with its sustainable properties, has garnered considerable attention for its potential to produce green electricity and clean water. This paper proposes a multistage energy transfer co-generation system (MWCNTs-covered thermoelectric module with aerogel and cooler, AC-CTEM) combining power generation and evaporative cooling. On the light-absorbing surface, the hot side of a thermoelectric module is covered with a hydrophobic coating made of PDMS and MWCNT. The cold side transfers heat to the evaporation zone using a heat sink. Aerogel evaporators are cross-linked with chitosan and polyurethane, which reduces the enthalpy of evaporation and facilitates efficient interfacial evaporation to remove heat and return it to refrigeration. Additionally, with the addition of Fresnel lenses and wind energy to the enhancement device, the system achieved an evaporation rate of 3.445 kg m-2 h-1 and an open-circuit voltage of 201.12 mV under 1 kW m-2 solar irradiation. The AC-CTEM system also demonstrated long-term stability and effectiveness in treating various types of non-potable water. Furthermore, we demonstrated the practical utility of the system by successfully cultivating grass seeds and powering electronic equipment. The AC-CTEM system exemplifies a practical energy-saving approach for the development of highly efficient co-generation systems.

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Grain boundary (GB) engineering includes grain size and GB segregation. Grain size has been proven to affect the electrical properties of Mg3(Sb, Bi)2 at low temperatures. However, the formation mechanism of GB segregation and what kind of GB segregation is beneficial to the performance are still unclear. Here, the Ga/Bi cosegregation at GBs and Mg segregation within grains optimize the transport of electrons and phonons simultaneously. Ga/Bi cosegregation promotes the formation of Janus-like structures due to the diverse ordering tendencies of liquid Mg3Sb2 and Mg3Bi2 and the absence of a solid solution of Ga/Bi. The Janus-like structure significantly reduces the room-temperature lattice thermal conductivity by introducing diverse microdefects. Meanwhile, a coherent interface between the nano Mg segregation region and the matrix is formed, which reduces the thermal conductivity without affecting the carrier transport. Furthermore, the band structure calculations show that Ga doping introduces the resonance level, increasing the Seebeck coefficient. Finally, the lattice thermal conductivity reaches ∼0.4 W m-1 K-1, and a high average ZT of 1.21 between 323 and ∼773 K is achieved for Mg3.2Y0.02Ga0.03Sb1.5Bi0.5. This work provides guidance for improving the thermoelectric performance via designing cosegregation.

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Due to its small hole-effective mass, flexibility, and transparency, copper iodide (CuI) has emerged as a promising p-type alternative to the predominantly used n-type metal oxide semiconductors. However, the lack of effective doping methods hinders the utility of CuI in various applications. Sulfur (S)-doping through liquid iodination is previously reported to significantly enhance electrical conductivity up to 511 S cm-1. In this paper, the underlying doping mechanism with various S-dopants is explored, and suggested a method for controlling electrical conductivity, which is important to various applications, especially thermoelectric (TE) materials. Subsequently, electric and TE properties are systematically controlled by adjusting the carrier concentration from 3.0 × 1019 to 4.5 × 1020 cm-3, and accurately measured thermal conductivity with respect to carrier concentration and film thickness. Sulfur-doped CuI (CuI:S) thin films exhibited a maximum power factor of 5.76 µW cm-1 K-2 at a carrier concentration of 1.3 × 1020 cm-3, and a TE figure of merit (ZT) of 0.25. Furthermore, a transparent and flexible TE power generator is developed, with an impressive output power density of 43 nW cm-2 at a temperature differential of 30 K. Mechanical durability tests validated the potential of CuI:S films in transparent and flexible TE applications.

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For BixSb2- xTe3 (BST) in thermoelectric field, the element ratio is easily influenced by the chemical environment, deviating from the stoichiometric ratio and giving rise to various intrinsic defects. In P-type polycrystalline BST, SbTe and BiTe are the primary forms of defects. Defect engineering is a crucial strategy for optimizing the electrical transport performance of Bi2Te3-based materials, but achieving synchronous improvement of thermal performance is challenging. In this study, mesoporous SiO2 is utilized to successfully mitigate the adverse impacts of vacancy defects, resulting in an enhancement of the electrical transport performance and a pronounced reduction in thermal conductivity. Crystal and the microstructure of the continuous modulation contribute to the effective phonon-electronic decoupling. Ultimately, the peak zT of Bi0.4Sb1.6Te3/0.8 wt% SiO2 (with a pore size of 4 nm) nanocomposites reaches as high as 1.5 at 348 K, and a thermoelectric conversion efficiency of 6.6% is achieved at ΔT = 222.7 K. These results present exciting possibilities for the realization of defect regulation in porous materials and hold reference significance for other material systems.

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Thermoelectric textile devices represent an intriguing avenue for powering wearable electronics. The lack of air-stable n-type polymers has, until now, prevented the development of n-type multifilament yarns, which are needed for textile manufacturing. Here, the thermomechanical properties of the recently reported n-type polymer poly(benzodifurandione) (PBFDO) are explored and its suitability as a yarn coating material is assessed. The outstanding robustness of the polymer facilitates the coating of silk yarn that, as a result, displays an effective bulk conductivity of 13 S cm-1, with a projected half-life of 3.2 ± 0.7 years at ambient conditions. Moreover, the n-type PBFDO coated silk yarn with a Young's modulus of E = 0.6 GPa and a strain at break of εbreak = 14% can be machine washed, with only a threefold decrease in conductivity after seven washing cycles. PBFDO and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) coated silk yarns are used to fabricate two out-of-plane thermoelectric textile devices: a thermoelectric button and a larger thermopile with 16 legs. Excellent air stability is paired with an open-circuit voltage of 17 mV and a maximum output power of 0.67 µW for a temperature difference of 70 K. Evidently, PBFDO coated multifilament silk yarn is a promising component for the realization of air stable thermoelectric textile devices.