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Exploring Doping Mechanisms and Modulating Carrier Concentration in Copper Iodide: Applications in Thermoelectric Materials.
Kim, Ga Hye; Kim, Hyeon-Beom; Lee, Hyungseok; Cho, Jae-Hyeok; Ryu, Jun; Kang, Dong-Won; Chung, In; Jang, Hyejin; Ahn, Kyunghan; Kim, Myung-Gil.
Afiliación
  • Kim GH; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
  • Kim HB; Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, Republic of Korea.
  • Lee H; Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea.
  • Cho JH; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
  • Ryu J; Department of Smart Cities, Chung-Ang University, Seoul, 06974, Republic of Korea.
  • Kang DW; School of Energy Systems Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea.
  • Chung I; Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea.
  • Jang H; Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, Republic of Korea.
  • Ahn K; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
  • Kim MG; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
Small ; : e2403133, 2024 Sep 02.
Article en En | MEDLINE | ID: mdl-39221667
ABSTRACT
Due to its small hole-effective mass, flexibility, and transparency, copper iodide (CuI) has emerged as a promising p-type alternative to the predominantly used n-type metal oxide semiconductors. However, the lack of effective doping methods hinders the utility of CuI in various applications. Sulfur (S)-doping through liquid iodination is previously reported to significantly enhance electrical conductivity up to 511 S cm-1. In this paper, the underlying doping mechanism with various S-dopants is explored, and suggested a method for controlling electrical conductivity, which is important to various applications, especially thermoelectric (TE) materials. Subsequently, electric and TE properties are systematically controlled by adjusting the carrier concentration from 3.0 × 1019 to 4.5 × 1020 cm-3, and accurately measured thermal conductivity with respect to carrier concentration and film thickness. Sulfur-doped CuI (CuIS) thin films exhibited a maximum power factor of 5.76 µW cm-1 K-2 at a carrier concentration of 1.3 × 1020 cm-3, and a TE figure of merit (ZT) of 0.25. Furthermore, a transparent and flexible TE power generator is developed, with an impressive output power density of 43 nW cm-2 at a temperature differential of 30 K. Mechanical durability tests validated the potential of CuIS films in transparent and flexible TE applications.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article Pais de publicación: Alemania
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article Pais de publicación: Alemania