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A new 3D micro-nano integrated M-shaped carbon nanotube (CNT) architecture was designed and fabricated. It is based on vertically aligned carbon nanotube arrays composed of low-density, mainly double-walled CNTs with simple lateral external contacts to the surroundings. Standard optical lithography techniques were used to locally tailor the width of the vertical block structure. The complete sensor system, based on a broadband blackbody absorber region and a high-resistance thermistor region, can be fabricated in a single chemical vapor deposition process step. The thermistor resistance is mainly determined by the high junction resistances of the adjacent aligned CNTs. This configuration also provides low lateral thermal conductivity and a high temperature coefficient of resistance (TCR). These properties are advantageous for new bolometric sensors with high voltage responsivity and broadband absorption from the infrared (IR) to the terahertz spectrum. Preliminary performance evaluations have shown current and voltage responsivities of 2 mA/W and 30 V/W, respectively, in response to IR (980 nm) absorption for a 20 × 20 µm2 device. The device exhibits an exceptionally fast response time of ≈0.15 ms, coupled with a TCR of -0.91 %/K. These attributes underscore its high operating speed and responsivity, respectively. In particular, the device maintains excellent thermal stability and reliable operation at elevated temperatures in excess of 200 °C, extending its potential utility in challenging environmental conditions. This design allows for further device miniaturization using optical lithography techniques. Its unique properties for mass production through large-scale integration techniques make it important for real-time broadband imaging systems.

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Infrared thermography is considered a useful technique for diagnosing several skin pathologies but it has not been widely adopted mainly due to its high cost. Here, we investigate the feasibility of using low-cost infrared cameras with microbolometer technology for detecting skin cancer. For this purpose, we collected infrared data from volunteer subjects using a high-cost/high-quality infrared camera. We propose a degradation model to assess the use of lower-cost imagers in such a task. The degradation model was validated by mimicking video acquisition with the low-cost cameras, using data originally captured with a medium-cost camera. The outcome of the proposed model was then compared with the infrared video obtained with actual cameras, achieving an average Pearson correlation coefficient of more than 0.9271. Therefore, the model successfully transfers the behavior of cameras with poorer characteristics to videos acquired with higher-quality cameras. Using the proposed model, we simulated the acquisition of patient data with three different lower-cost cameras, namely, Xenics Gobi-640, Opgal Therm-App, and Seek Thermal CompactPRO. The degraded data were used to evaluate the performance of a skin cancer detection algorithm. The Xenics and Opgal cameras achieved accuracies of 84.33% and 84.20%, respectively, and sensitivities of 83.03% and 83.23%, respectively. These values closely matched those from the non-degraded data, indicating that employing these lower-cost cameras is appropriate for skin cancer detection. The Seek camera achieved an accuracy of 82.13% and a sensitivity of 79.77%. Based on these results, we conclude that this camera is appropriate for less critical applications.

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The detection of impact and depth defects in Glass Fiber Reinforced Polymer (GFRP) composites has been extensively studied to develop effective, reliable, and cost-efficient assessment methods through various Non-Destructive Testing (NDT) techniques. Challenges in detecting these defects arise from varying responses based on the geometrical shape, thickness, and defect types. Long Pulse Thermography (LPT), utilizing an uncooled microbolometer and a low-resolution infrared (IR) camera, presents a promising solution for detecting both depth and impact defects in GFRP materials with a single setup and minimal tools at an economical cost. Despite its potential, the application of LPT has been limited due to susceptibility to noise from environmental radiation and reflections, leading to blurry images. This study focuses on optimizing LPT parameters to achieve accurate defect detection. Specifically, we investigated 11 flat-bottom hole (FBH) depth defects and impact defects ranging from 8 J to 15 J in GFRP materials. The key parameters examined include the environmental temperature, background reflection, background color reflection, and surface emissivity. Additionally, we employed image processing techniques to classify composite defects and automatically highlight defective areas. The Tanimoto Criterion (TC) was used to evaluate the accuracy of LPT both for raw images and post-processed images. The results demonstrate that through parameter optimization, the depth defects in GFRP materials were successfully detected. The TC success rate reached 0.91 for detecting FBH depth defects in raw images, which improved significantly after post-processing using Canny edge detection and Hough circle detection algorithms. This study underscores the potential of optimized LPT as a cost-effective and reliable method for detecting defects in GFRP composites.

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This work evaluates the electrical, optical and thermal properties of Sn-doped GexSi1-xOy thin films for use as microbolometer sensing materials. The films were prepared using a combination of a radio frequency (RF) magnetron and direct current (DC) sputtering using a Kurt J Leskar Proline PVD-75 series sputtering machine. Thin films were deposited in an O2+Ar environment at a chamber pressure of 4 mTorr. The thicknesses of the thin films were varied between 300 nm-1.2 µm by varying the deposition time. The morphology and microstructure of thin films were investigated by atomic force microscope (AFM) imaging and X-ray diffraction (XRD), while the atomic composition was determined using the energy dispersive spectroscopy (EDS) function of a scanning electron microscope. The thin film with an atomic composition of Ge0.45Si0.05Sn0.15O0.35 was found to be amorphous. We used the Arrhenius relationship to determine the activation energy as well as temperature coefficient of resistance of the thin films, which were found to be 0.2529 eV and -3.26%/K, respectively. The noise voltage power spectral density (PSD) of the film was analyzed using a Primarius-9812DX noise analyzer using frequencies ranging from 2 Hz to 10 kHz. The noise voltage PSD of the film was found to be 1.76 × 10-11 V2/Hz and 2.78 × 10-14 V2/Hz at 2 Hz and 1KHz frequencies, respectively. The optical constants were determined using the ellipsometry reflection data of samples using an RC2 and infrared (IR) VASE Mark-II ellipsometer from J A Woollam. Absorption, transmission and reflection data for a wavelength range of 900 nm-5000 nm were also determined. We also determined the optical constant values such as the real and imaginary parts of refractive index (n and k, respectively) and real and imaginary part of permittivity (ε1 and ε2, respectively) for wavelength ranges between 193 nm to 35 µm. An optical band gap of 1.03 eV was determined from absorption data and using Tauc's equation. In addition, the thermal conductivity of the film was analyzed using a Linseis thin film analyzer employing the 3ω method. The thermal conductivity of a 780 nm thick film was found to be 0.38 Wm-1K-1 at 300 K. From the data, the Ge-Si-Sn-O alloy was found to be a promising material for use as a sensing material for microbolometers.

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This study demonstrates the conversion of metallic titanium (Ti) to titanium oxide just by conducting electrical current through Ti thin film in vacuum and increasing the temperature by Joule heating. This led to the improvement of electrical and thermal properties of a microbolometer. A microbolometer with an integrated Ti thermistor and heater width of 2.7 µm and a length of 50 µm was fabricated for the current study. Constant-voltage stresses were applied to the thermistor wire to observe the effect of the Joule heating on its properties. Thermistor resistance ~14 times the initial resistance was observed owing to the heating. A negative large temperature coefficient of resistance (TCR) of -0.32%/K was also observed owing to the treatment, leading to an improved responsivity of ~4.5 times from devices with untreated Ti thermistors. However, this does not improve the noise equivalent power (NEP), due to the increased flicker noise. Microstructural analyses with transmission electron microscopy (TEM), transmission electron diffraction (TED) and energy dispersive X-ray (EDX) confirm the formation of a titanium oxide (TiOx) semiconducting phase on the Ti phase (~85% purity) deposited initially, further to the heating. Formation of TiOx during annealing could minimize the narrow width effect, which we reported previously in thin metal wires, leading to enhancement of responsivity.

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Thermal vision-based devices are nowadays used in a number of industries, ranging from the automotive industry, surveillance, navigation, fire detection, and rescue missions to precision agriculture. This work describes the development of a low-cost imaging device based on thermographic technology. The proposed device uses a miniature microbolometer module, a 32-bit ARM microcontroller, and a high-accuracy ambient temperature sensor. The developed device is capable of enhancing RAW high dynamic thermal readings obtained from the sensor using a computationally efficient image enhancement algorithm and presenting its visual result on the integrated OLED display. The choice of microcontroller, rather than the alternative System on Chip (SoC), offers almost instantaneous power uptime and extremely low power consumption while providing real-time imaging of an environment. The implemented image enhancement algorithm employs the modified histogram equalization, where the ambient temperature sensor helps the algorithm enhance both background objects near ambient temperature and foreground objects (humans, animals, and other heat sources) that actively emit heat. The proposed imaging device was evaluated on a number of environmental scenarios using standard no-reference image quality measures and comparisons against the existing state-of-the-art enhancement algorithms. Qualitative results obtained from the survey of 11 subjects are also provided. The quantitative evaluations show that, on average, images acquired by the developed camera provide better perception quality in 75% of tested cases. According to qualitative evaluations, images acquired by the developed camera provide better perception quality in 69% of tested cases. The obtained results verify the usability of the developed low-cost device for a range of applications where thermal imaging is needed.

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The rapid expansion of the applications of infrared (IR) sensing in the commercial market has driven the need to develop new materials and detector designs for enhanced performance. In this work, we describe the design of a microbolometer that uses two cavities to suspend two layers (sensing and absorber). Here, we implemented the finite element method (FEM) from COMSOL Multiphysics to design the microbolometer. We varied the layout, thickness, and dimensions (width and length) of different layers one at a time to study the heat transfer effect for obtaining the maximum figure of merit. This work reports the design, simulation, and performance analysis of the figure of merit of a microbolometer that uses GexSiySnzOr thin films as the sensing layer. From our design, we obtained an effective thermal conductance of 1.0135×10-7 W/K, a time constant of 11 ms, responsivity of 5.040×105 V/W, and detectivity of 9.357×107 cm-Hz1/2/W considering a 2 µA bias current.

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The microbolometer is an important device that has a variety of civilian, industrial, and military applications, especially in remote sensing and night vision. Microbolometers are sensor elements in uncooled infrared sensors, which makes the uncooled infrared sensors have the advantage of being smaller in size, light in weight and less expensive compared with cooled infrared sensors. If the microbolometers are arranged in a two-dimensional array, a thermo-graph of the object can be determined using a microbolometer based uncooled infrared sensor. Building the electro-thermal modeling over the microbolometer pixel is essential to determine the uncooled infrared sensor's performance, optimize the sensor's design structure and monitor its condition. Due to the fact that the knowledge for the complex semiconductor-material-based microbolometers over various kinds of design structures with the adjustable thermal conductance is limited so far, this work focuses on the thermal distribution first by considering factors of the radiation absorption, thermal conductance, convection feature and joule heating on varied geometry design structures using Finite Element Analysis (FEA) methods. Then the change of thermal conductance is depicted when the simulated voltage is applied quantitatively between the microplate and electrode through the dynamic interaction of the electro force and the structure deformation via the electro particles redistribution balance by utilizing the Microeletromechanical system (MEMS). In addition, a more accurate contact voltage is derived through the numerical simulation compared with the previous theoretical value and is also verified by the experiment.

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To make the mid-infrared (MIR) dispersive spectrograph a practical tool in industrial food processing lines, we designed a dispersive spectrograph system with an uncooled microbolometer focal plane array (FPA) detector for MIR spectral acquisition. To precisely regulate the angle of a rotatable grating to acquire the MIR spectrum, the spectral resolution and spatial resolution of the system were rigorously controlled to improve system performance. In the reflectance operation mode of the MIR dispersive spectrograph, the uncooled microbolometer FPA detector offered a maximum spectral resolution of 12 nm for the MIR, when a 300 grooves/mm blazed grating was used. Utilizing an optical parametric oscillator (OPO) pulse laser source, the wavelengths of the first-order diffraction were validated, and the system's spectral resolution limit was determined. As a line-scanning source, a Globar broadband source was installed, and the USAF 1951 Resolution Calculator was used to establish the spatial resolution of the imaging spectrograph. Using NI LabView, the logical operational technique for controlling the MIR dispersive spectrograph was encoded into system firmware. The GUI and test results are thoroughly described.

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Most microsensors are composed of devices and covers. Due to the complicated structure of the cover and various other requirements, it difficult to use wafer-level packaging with such microsensors. In particular, for monolithic microsensors combined with read-out ICs, the available process margins are further reduced due to the thermal and mechanical effects applied to IC wafers during the packaging process. This research proposes a low-temperature, wafer-level vacuum packaging technology based on Cu-Sn bonding and nano-multilayer getter materials for use with microbolometers. In Cu-Sn bonding, the Cu/Cu3Sn/Cu microstructure required to ensure reliability can be obtained by optimizing the bonding temperature, pressure, and time. The Zr-Ti-Ru based nanomultilayer getter coating inside the cap wafer with high step height has been improved by self-aligned shadow masking. The device pad, composed of bonded wafer, was opened by wafer grinding, and the thermoelectrical properties were evaluated at the wafer-level. The bonding strength and vacuum level were characterized by a shear test and thermoelectrical test using microbolometer test pixels. The vacuum level of the packaged samples showed very narrow distribution near 50 mTorr. This wafer-level packaging platform could be very useful for sensor development whereby high reliability and excellent mechanical/optical performance are both required. Due to its reliability and the low material cost and bonding temperature, this wafer-based packaging approach is suitable for commercial applications.

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A key challenge in further improving infrared (IR) sensor capabilities is the development of efficient data pre-processing algorithms. This paper addresses this challenge by providing a mathematical model and synthetic data generation framework for an uncooled IR sensor. The developed model is capable of generating synthetic data for the design of data pre-processing algorithms of uncooled IR sensors. The mathematical model accounts for the physical characteristics of the focal plane array, bolometer readout, optics and the environment. The framework permits the sensor simulation with a range of sensor configurations, pixel defectiveness, non-uniformity and noise parameters.

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The micro-bolometer is important in the field of infrared imaging, although improvements in its performance have been limited by traditional materials. SiGe/Si multi-quantum-well materials (SiGe/Si MQWs) are novelty thermal-sensitive materials with a significantly high TCR and a comparably low 1/f noise. The application of such high-performance monocrystalline films in a micro-bolometer has been limited by film integration technology. This paper reports a SiGe/Si MQWs micro-bolometer fabrication with heterogeneous integration. The integration with the SiGe/Si MQWs handle wafer and dummy read-out circuit wafer was achieved based on adhesive wafer bonding. The SiGe/Si MQWs infrared-absorption structure and thermal bridge were calculated and designed. The SiGe/Si MQWs wafer and a 320 × 240 micro-bolometer array of 40 µm pitch L-type pixels were fabricated. The test results for the average absorption efficiency were more than 90% at the wavelength of 8-14 µm. The test pixel was measured to have a thermal capacity of 1.043 × 10-9 J/K, a thermal conductivity of 1.645 × 10-7 W/K, and a thermal time constant of 7.25 ms. Furthermore, the total TCR value of the text pixel was measured as 2.91%/K with a bias voltage of 0.3 V. The SiGe/Si MQWs micro-bolometer can be widely applied in commercial fields, especially in early medical diagnosis and biological detection.

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To realize high-resolution thermal images with high quality, it is essential to improve the noise characteristics of the widely adopted uncooled microbolometers. In this work, we applied the post-metal annealing (PMA) process under the condition of deuterium forming gas, at 10 atm and 300 °C for 30 min, to reduce the noise level of amorphous-Si microbolometers. Here, the DC and temperature coefficient of resistance (TCR) measurements of the devices as well as 1/f noise analysis were performed before and after the PMA treatment, while changing the width of the resistance layer of the microbolometers with 35 µm or 12 µm pixel. As a result, the microbolometers treated by the PMA process show the decrease in resistance by about 60% and the increase in TCR value up to 48.2% at 10 Hz, as compared to the reference device. Moreover, it is observed that the noise characteristics are improved in inverse proportion to the width of the resistance layer. This improvement is attributed to the cured poly-silicon grain boundary through the hydrogen passivation by heat and deuterium atoms applied during the PMA, which leads to the uniform current path inside the pixel.

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The microbolometer is the cornerstone device for imaging in the long-wavelength infrared range (LWIR) at room temperature. The state-of-the-art commercial microbolometers usually have a large thermal time constant (TTC) of over 10 ms, limited by their substantial device heat capacity. Moreover, the minimal pixel size of state-of-the-art bolometer is around 10 µm by 10 µm to ensure sufficient power absorption per pixel. Here, we demonstrate an ultrafast silicon nanomembrane microbolometer with a small heat capacity of around 1.9 × 10-11J/K, which allows for its operation at a speed of over 10 kHz, corresponding to a TTC of less than 16 µs. Moreover, a compact diabolo antenna is leveraged for efficient LWIR light absorption, enabling the downscaling of the active area size to 6.2 µm by 6.2 µm. Because of the complementary metal oxide semiconductor (CMOS)-compatible fabrication processes, our demonstration here may lead to a future high-resolution and high-speed LWIR imaging solution.

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We present a real-time THz imaging method using a commercial fiber-coupled photo conductive antenna as the THz source and an uncooled microbolometer camera for detection. This new combination of state-of-the-art components is very adaptable due to its compact and uncooled radiation source, whose fiber coupling allows for a flexible placement. Using a camera with high sensitivity renders real-time imaging possible. As a proof-of-concept, the beam shape of a THz Time Domain Spectrometer was measured. We demonstrate real time imaging at nine frames per second and show its potential for practical applications in transmission geometry covering both material science and security tasks. The results suggest that hidden items, complex structures and the moisture content of (biological) materials can be resolved. We discuss the limits of the current setup, possible improvements and potential (industrial) applications, and we outline the feasibility of imaging in reflection geometry or extending it to multi-spectral imaging using band pass filters.

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This study describes the development of a prototype bi-spectral microbolometer sensor system designed explicitly for radiometric measurement and characterization of wildfire mid- and long-wave infrared radiances. The system is tested experimentally over moderate-scale experimental burns coincident with FLIR reference imagery. Statistical comparison of the fire radiative power (FRP; W) retrievals suggest that this novel system is highly reliable for use in collecting radiometric measurements of biomass burning. As such, this study provides clear experimental evidence that mid-wave infrared microbolometers are capable of collecting FRP measurements. Furthermore, given the low resource nature of this detector type, it presents a suitable option for monitoring wildfire behaviour from low resource platforms such as unmanned aerial vehicles (UAVs) or nanosats.

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A readout circuit incorporating a pixel-level analog-to-digital converter (ADC) is studied for two-dimensional medium wavelength infrared microbolometer arrays. The signal-to-noise ratio (SNR) and charge handling capacity of the unit cell circuit are improved by using the current input pixel-level ADC. The charge handling capacity of the integrator is appropriately extended to maximize the integration time regardless of the magnitude of the input current and low power supply voltage. The readout circuit was fabricated using a 0.35-µm 2-poly 4-metal CMOS process for a 640 × 512 array with a pixel size of 40 µm × 40 µm. The peak SNR and dynamic range are 77.1 and 80.1 dB, respectively, with a power consumption of 0.62 µW per pixel.

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In this paper, a periodic structure based on metallic split-ring resonators is integrated into micro-bridge structures of THz microbolometer array to achieve high THz wave absorption in a wide frequency range. With a small unit size of 35 µm × 35 µm, the effect of split-ring structure on THz wave absorption characteristics of the multilayer structure array is studied to manipulate the resonance absorption frequencies. The absorption bandwidth is effectively increased by integrating a combined structure of split-ring and metallic disk. Broadband THz absorption is formed by coupling the absorption peaks of different structures. The periodic structure of dual-ring combined with a metallic disk provides a broadband THz wave absorption in the range of 4-7 THz. The highest absorption in the band reaches 90% and the lowest absorption is higher than 40%. The designed structure is process-compatible and easy to implement for small-pixel THz microbolometers with high absorption in a wide spectrum range. The research provides a scheme for broadband THz sensing and real-time imaging at room temperature.

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The complementary metal oxide semiconductor (CMOS) microbolometer technology provides a low-cost approach for the long-wave infrared (LWIR) imaging applications. The fabrication of the CMOS-compatible microbolometer infrared focal plane arrays (IRFPAs) is based on the combination of the standard CMOS process and simple post-CMOS micro-electro-mechanical system (MEMS) process. With the technological development, the performance of the commercialized CMOS-compatible microbolometers shows only a small gap with that of the mainstream ones. This paper reviews the basics and recent advances of the CMOS-compatible microbolometer IRFPAs in the aspects of the pixel structure, the read-out integrated circuit (ROIC), the focal plane array, and the vacuum packaging.

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Terahertz technologies are attracting strong interest from high-end industrial fields, and particularly for non-destructive-testing purposes. Currently lacking compactness, integrability as well as adaptability for those implementations, the development and commercialisation of more efficient sources and detectors progressively ensure the transition toward applicative implementations, especially for real-time full-field imaging. In this work, a flexible illumination system, based on fast beam steering has been developed and characterized. Its primary goal is to suppress interferences induced by the coherence length of certain terahertz sources, spoiling terahertz images. The second goal is to ensure an enhanced signal-to-noise ratio on the detector side by the full use and optimized distribution of the available power. This system provides a homogeneous and adjustable illumination through a simplified setup to guarantee optimum real-time imaging capabilities, tailored to the sample under inspection. Working toward industrial implementations, different illumination process are conveniently assessed as a result of the versatility of this method.