RESUMEN
Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, α-In2Se3, known for its electrically addressable vertical polarization, has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in single-domain α-In2Se3. The processes of vertical polarization switching in monolayer α-In2Se3 are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of α-In2Se3, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.
RESUMEN
We built a custom-made holder with a Hall-effect sensor to measure the single point magnetic flux density inside a transmission electron microscope (TEM, JEM-F200, JEOL). The measurement point is at the same place as the sample inside the TEM. We utilized information collected with the Hall-effect sensor holder to study magnetic domain wall (DW) dynamics by in-situ Lorentz microscopy. We generated an external magnetic field to the sample using the objective lens (OL) of the TEM. Based on our measurements with the Hall-effect sensor holder, the OL has nearly linear response, and when it is switched off, the strength of the magnetic field in the sample region is very close to 0 mT. A ferritic-pearlitic sample studied has globular and lamellar cementite (Fe3C) carbides in the ferrite matrix. Based on the in-situ Lorentz microscopy experiments, DWs in the ferritic matrix perpendicular to the lamellar carbides start to move first at â¼10 mT. At 160 mT, DWs inside the globular carbide start to disappear, and the saturation occurs at â¼210 mT. At 288 mT, the DWs parallel to the lamellar carbides still exist. Thus, these lamellar carbides are very strong pinning sites for DWs. We also run dynamical micromagnetic simulations to reproduce the DW disappearance in the globular carbide. As in the in-situ experiments, the DWs stay stable until the external field reaches the magnitude of 160 mT, and the DWs disappear before the field is 214 mT. In general, the micromagnetic simulations supported very well the interpretation of the experimental findings.
RESUMEN
We study the thermal gradient (TG) induced domain wall (DW) dynamics in a uniaxial nanowire in the framework of the Stochastic-Landau-Lifshitz-Gilbert equation. TG drives the DW in a certain direction, and DW (linear and rotational) velocities increase with TG linearly, which can be explained by the magnonic angular momentum transfer to the DW. Interestingly, from Gilbert damping dependence of DW dynamics for fixed TG, we find that the DW velocity is significantly smaller even for lower damping, and DW velocity increases with damping (for a certain range of damping) and reaches a maximal value for critical damping which is contrary to our usual desire. This can be attributed to the formation of standing spin wave (SSW) modes (from the superposition of the spin waves and their reflection) together with travelling spin wave (TSW) modes. SSW does not carry any net energy/momentum to the DW, while TSW does. Dampingαcompels the spin current polarization to align with the local spin, which reduces the magnon propagation length and thusαhinders to generate SSWs, and contrarily the number of TSWs increases, which leads to the increment of DW speed with damping. For a similar reason, we observe that DW velocity increases with nanowire length and becomes saturated to maximal value for a certain length. Therefore, these findings may enhance the fundamental understanding as well as provide a way of utilizing the Joule heat in the spintronics (e.g. racetrack memory) devices.
RESUMEN
The absence of stray fields, their insensitivity to external magnetic fields, and ultrafast dynamics make antiferromagnets promising candidates for active elements in spintronic devices. Here, we demonstrate manipulation of the Néel vector in the metallic collinear antiferromagnet Mn2Au by combining strain and femtosecond laser excitation. Applying tensile strain along either of the two in-plane easy axes and locally exciting the sample by a train of femtosecond pulses, we align the Néel vector along the direction controlled by the applied strain. The dependence on the laser fluence and strain suggests the alignment is a result of optically triggered depinning of 90° domain walls and their motion in the direction of the free energy gradient, governed by the magneto-elastic coupling. The resulting, switchable state is stable at room temperature and insensitive to magnetic fields. Such an approach may provide ways to realize robust high-density memory device with switching time scales in the picosecond range.
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The dynamics of complex topological defects in ferroelectric materials is explored using automated experimentation in piezoresponse force microscopy. Specifically, a complex trigger system (i.e., "FerroBot") is employed to study metastable domain-wall dynamics in Pb0.6Sr0.4TiO3 thin films. Several regimes of superdomain wall dynamics have been identified, including smooth domain-wall motion and significant reconfiguration of the domain structures. We have further demonstrated that microscopic mechanisms of the domain-wall dynamics can be identified; i.e., domain-wall bending can be separated from irreversible domain reconfiguration regimes. In conjunction, phase-field modeling was used to corroborate the observed mechanisms. As such, the observed superdomain dynamics can provide a model system for classical ferroelectric dynamics, much like how colloidal crystals provide a model system for atomic and molecular systems.
RESUMEN
Field-induced domain-wall dynamics in ferroelectric materials underpins multiple applications ranging from actuators to information technology devices and necessitates a quantitative description of the associated mechanisms including giant electromechanical couplings, controlled nonlinearities, or low coercive voltages. While the advances in dynamic piezoresponse force microscopy measurements over the last two decades have rendered visualization of polarization dynamics relatively straightforward, the associated insights into the local mechanisms have been elusive. This work explores the domain dynamics in model polycrystalline materials using a workflow combining deep-learning-based segmentation of the domain structures with nonlinear dimensionality reduction using multilayer rotationally invariant autoencoders (rVAE). The former allows unambiguous identification and classification of the ferroelectric and ferroelastic domain walls. The rVAE discovers the latent representations of the domain wall geometries and their dynamics, thus providing insight into the intrinsic mechanisms of polarization switching, that can further be compared to simple physical models. The rVAE disentangles the factors affecting the pinning efficiency of ferroelectric walls, offering insights into the correlation of ferroelastic wall distribution and ferroelectric wall pinning.
RESUMEN
Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT-driven DW motion in ferrimagnetic manganese nickel nitride (Mn4-xNixN) films, in which magnetization and angular momentum compensation can be obtained by the fine adjustment of the Ni content. Large domain wall velocities, approaching 3000 m/s, are measured for Ni compositions close to the angular momentum compensation point. The reversal of the DW motion direction, observed when the compensation composition is crossed, is related to the change of direction of the angular momentum with respect to that of the spin polarization. This is confirmed by the results of ab initio band structure calculations.
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The domain wall (DW) dynamics of amorphous and nanocrystalline Co-based glass-coated microwires are explored under the influence of stress annealing. Different annealing profiles have enabled remarkable changes in coercivity and magnetostriction values of Co-based amorphous microwires with initially negative magnitude, allowing induced magnetic bistability in stress-annealed samples and, consequently, high DW velocity has been observed. Similarly, Co-based nanocrystalline microwires with positive magnetostriction and spontaneous bistability have featured high DW velocity. Different values of tensile stresses applied during annealing have resulted in a redistribution of magnetoelastic anisotropy showing a decreasing trend in both DW velocities and coercivity of nanocrystalline samples. Observed results are discussed in terms of the stress dependence on magnetostriction and microstructural relaxation.
RESUMEN
We demonstrate a highly efficient and simple scheme for injecting domain walls into magnetic nanowires. The spin transfer torque from nanosecond long, unipolar, current pulses that cross a 90° magnetization boundary together with the fringing magnetic fields inherently prevalent at the boundary, allow for the injection of single or a continual stream of domain walls. Remarkably, the currents needed for this "in-line" domain wall injection scheme are at least one hundred times smaller than conventional methods.