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PURPOSE: To assess the Xpert MTB/XDR assay's efficiency in promptly detecting resistance to isoniazid, fluoroquinolones, ethionamide, and second-line injectable drugs among tuberculosis (TB) patients. METHODS: From August 2020 to July 2021, TB suspected patient samples were enrolled at a tertiary care center for our study. We conducted mycobacterial culture, phenotypic DST using proportion method in liquid culture at WHO-recommended concentrations, and the line probe assay (LPA). Simultaneously, the Index test, Xpert MTB/XDR, was performed following the manufacturer's instructions. RESULTS: Among 360 samples, 107 were excluded due to incomplete information. Resistance to isoniazid, levofloxacin and moxifloxacin was found in 45/251, 21/251 and 20/251 samples, respectively by phenotypic DST. The diagnostic accuracy of Index test, taking phenotypic DST as a reference standard, was 95.8%, 99.04%, and 99.05% for isoniazid, levofloxacin, and moxifloxacin, respectively. The Index test assay demonstrated a specificity of 99.1% for detecting SLID resistance, yielding a diagnostic accuracy of 99.2. Comparing the Index test with LPA revealed a significant enhancement in sensitivity for detecting isoniazid resistance (86.7% vs. 82.2%). CONCLUSIONS: The Index test exhibited promising outcomes in identifying resistance to isoniazid and fluoroquinolones, surpassing the performance of the LPA. This could be valuable for promptly initiating treatment in cases of drug-resistant tuberculosis.
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Considering the demand for low temperature bonding in 3D integration and packaging of microelectronic or micromechanical components, this paper presents the development and application of an innovative inductive heating system using micro coils for rapid Cu-Sn solid-liquid interdiffusion (SLID) bonding at chip-level. The design and optimization of the micro coil as well as the analysis of the heating process were carried out by means of finite element method (FEM). The micro coil is a composite material of an aluminum nitride (AlN) carrier substrate and embedded metallic coil conductors. The conductive coil geometry is generated by electroplating of 500 µm thick copper into the AlN carrier. By using the aforementioned micro coil for inductive Cu-Sn SLID bonding, a complete transformation into the thermodynamic stable ε-phase Cu3Sn with an average shear strength of 45.1 N/mm2 could be achieved in 130 s by applying a bond pressure of 3 MPa. In comparison to conventional bonding methods using conduction-based global heating, the presented inductive bonding approach is characterized by combining very high heating rates of about 180 K/s as well as localized heating and efficient cooling of the bond structures. In future, the technology will open new opportunities in the field of wafer-level bonding.
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Over the past few years, significant progress towards implementation of environmentally sustainable and cost-effective thermoelectric power generation has been made. However, the reliability and high-temperature stability challenges of incorporating thermoelectric materials into modules still represent a key bottleneck. Here, we demonstrate an implementation of the Solid-Liquid Interdiffusion technique used for bonding Mmy(Fe,Co)4Sb12 p-type thermoelectric material to metallic interconnect using a novel aluminiumâ»nickel multi-layered system. It was found that the diffusion reaction-controlled process leads to the formation of two distinct intermetallic compounds (IMCs), Al3Ni and Al3Ni2, with a theoretical melting point higher than the initial bonding temperature. Different manufacturing parameters have also been investigated and their influence on electrical, mechanical and microstructural features of bonded components are reported here. The resulting electrical contact resistances and apparent shear strengths for components with residual aluminium were measured to be (2.8 ± 0.4) × 10-5 Ωâcm² and 5.1 ± 0.5 MPa and with aluminium completely transformed into Al3Ni and Al3Ni2 IMCs were (4.8 ± 0.3) × 10-5 Ωâcm² and 4.5 ± 0.5 MPa respectively. The behaviour and microstructural changes in the joining material have been evaluated through isothermal annealing at hot-leg working temperature to investigate the stability and evolution of the contact.
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The reach and impact of the Internet of Things will depend on the availability of low-cost, smart sensors-"low cost" for ubiquitous presence, and "smart" for connectivity and autonomy. By using wafer-level processes not only for the smart sensor fabrication and integration, but also for packaging, we can further greatly reduce the cost of sensor components and systems as well as further decrease their size and weight. This paper reviews the state-of-the-art in the wafer-level vacuum packaging technology of smart sensors. We describe the processes needed to create the wafer-scale vacuum microchambers, focusing on approaches that involve metal seals and that are compatible with the thermal budget of complementary metal-oxide semiconductor (CMOS) integrated circuits. We review choices of seal materials and structures that are available to a device designer, and present techniques used for the fabrication of metal seals on device and window wafers. We also analyze the deposition and activation of thin film getters needed to maintain vacuum in the ultra-small chambers, and the wafer-to-wafer bonding processes that form the hermetic seal. We discuss inherent trade-offs and challenges of each seal material set and the corresponding bonding processes. Finally, we identify areas for further research that could help broaden implementations of the wafer-level vacuum packaging technology.