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An altermagnet exhibits many novel physical phenomena because of its intrinsic antiferromagnetic coupling and natural band spin splitting, which are expected to give rise to new types of magnetic electronic components. In this study, an Fe2Se2O monolayer is proven to be an altermagnet with out-of-plane magnetic anisotropy, and its Néel temperature is determined to be 319 K. The spin splitting of the Fe2Se2O monolayer reaches 860 meV. Moreover, an Fe2Se2O monolayer presents a pair of energy valleys, which can be polarized and reversed by applying uniaxial strains along different directions, resulting in a piezovalley effect. Under the strain, the net magnetization can be induced in the Fe2Se2O monolayer by doping with holes, thereby realizing a piezomagnetic property. Interestingly, noncollinear spin current can be generated by applying an in-plane electric field on an unstrained Fe2Se2O monolayer doped with 0.2 hole/formula unit. These excellent physical properties make the Fe2Se2O monolayer a promising candidate for multifunctional spintronic and valleytronic devices.

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The emergence of an intrinsic quantum anomalous Hall (QAH) insulator with long-range magnetic order triggers unprecedented prosperity for combining topology and magnetism in low dimensions. Here, based on stacked two-dimensional LiFeTe, we confirm that magnetic coupling and topological electronic states can be simultaneously manipulated by just changing the layer numbers. Monolayer LiFeTe shows intralayer ferrimagnetic coupling, behaving as a QAH insulator with Chern number C = 2. Beyond the monolayer, the odd and even layers of LiFeTe correspond to uncompensated and compensated interlayer antiferromagnets, resulting in unexpected QAH and quantum spin Hall (QSH) states, respectively. Moreover, the spin Chern number is proportional to the stacking layer numbers in even-layer LiFeTe, proving that the spin Hall conductivity can be continuously enhanced by increasing layer numbers. Therefore, the odd-even-layer-dependent QAH and QSH effects found in LiFeTe topological insulators offer new insight into regulating quantum states in two-dimensional topological materials.

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Ferrovalley materials are garnering significant interest for their potential roles in advancing information processing and enhancing data storage capabilities. This study utilizes first-principles calculations to determine that the Janus monolayer TiTeCl exhibits the properties of a ferrovalley semiconductor. This material demonstrates valley polarization with a notable valley splitting of 80 meV. Additionally, the Berry curvature has been computed across the first Brillouin zone of the monolayer TiTeCl. The research also highlights that topological phase transitions ranging from ferrovalley and half-valley metals to quantum anomalous Hall effect states can occur in monolayer TiTeCl under compressive strains ranging from -1% to 0%. Throughout these strain changes, monolayer TiTeCl maintains its ferromagnetic coupling. These characteristics make monolayer TiTeCl a promising candidate for the development of new valleytronic and topological devices.

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Valley is used as a new degree of freedom for information encoding and storage. In this work, the valley and topological properties of the VSiGeP4 monolayer were studied by adjusting the U value based on first-principles calculations. The VSiGeP4 monolayer remains in a ferromagnetic ground state regardless of the change in the U value. The magnetic anisotropy of the VSiGeP4 monolayer is initially in-plane, and then turns out-of-plane with the increase in the U value. Moreover, a topological phase transition is observed in the present VSiGeP4 monolayer with the increase in U value from 0 to 3 eV, i.e., the VSiGeP4 monolayer behaves as a bipolar magnetic semiconductor, a ferrovalley semiconductor, a half-valley metal characteristic, and a quantum anomalous Hall state. The mechanism of the topological phase transition behavior of the VSiGeP4 monolayer was analyzed. It was found that the variation in U values would change the strength of the electronic correlation effect, resulting in the valley and topological properties. In addition, carrier doping was studied to design a valleytronic device using this VSiGeP4 monolayer. By doping 0.05 electrons per f.u., the VSiGeP4 monolayer with a U value of 3 eV exhibits 100% spin polarization. This study indicates that the VSiGeP4 monolayer has potential applications in spintronic, valleytronic, and topological electronic nanodevices.

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The low-vacuum and low-accelerating-voltage modes are the most simple and practical ways to directly analyze poorly conductive samples in conventional scanning electron microscopy (SEM). However, structural feature information may disappear or be obscured in these imaging modes, making it challenging to identify and analyze some local microstructures of poorly conductive samples. To overcome this challenge, an enhanced visualization image acquisition method for samples with poor conductivity is proposed based on the image registration and multi-sensor fusion technology. Experiments demonstrate that the proposed method can effectively obtain enhanced visualization images containing clearer terrain information than the SEM source images, thereby providing new references for measuring and analyzing microstructures.

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Broadband motion control in flexure-based stages can benefit from passive damping enhancement at their flexible structures. This paper develops a damped two-axis axially collocated (2-AC) flexure hinge with damping-enabling hybrid inserts and analytically derives its loss factor model based on hybrid (empirical and analytical) compliance modeling and shearing damping modeling. The analytical loss factor model is verified by finite element analysis. It is seen that the geometric parameters of the diameter and slope angle of the insert are sensitive to the hinge's loss factor based on the theoretical loss factor model, especially in low-frequency and resonant zone. The actual experiments and finite element simulation indicate that embedding the hybrid inserts into the 2-AC flexure hinge can improve the damping performance of the hinge.

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In the process of microassembly, aligning the end effectors with the micro-parts using image information is the basis of automated assembly. In order to realize the flexible and accurate clamping center locating of the micro-gripper with various shapes of jaws, this paper proposes an iterative-based processing algorithm. First, the locating problem is transformed into a multi-parameter optimization problem through the geometric analysis of the clamping process. Second, an iterative optimal algorithm based on the block coordinate descent is developed, in which a scaling golden section (SGS) scheme is proposed to calculate the iteration scaling parameters. Third, the lookup table and variable threshold iteration techniques are utilized to further improve the performance of the SGS scheme. Simulation results show that the proposed algorithm can efficiently locate the clamping center for various types of jaws with sub-pixel accuracy. Finally, a microassembly experiment is carried out to demonstrate the effectiveness of the algorithm.

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High-sensitivity detection of vibrations under high temperatures is a topic of great interest in modern engineering such as thermal engine deep-sea aquaculture factory ship, aerospace, high temperature casting, energy, etc. As traditional accelerometers and some fiber optic F-P accelerometers have shown their sensing limits at about 400 °C and 650 °C, respectively, a high temperature fiber optic F-P accelerometer based on MEMS technology is proposed. To obtain a high-performance chip for the sensor, an examination of the theoretical performance of an L and Г-shaped cantilever beam diaphragm shows a sensitivity of 15.05 nm/g and 53.7 nm/g, respectively, and a wide working frequency range. Thanks to the designed sensor's various protections, frequency measurements with a high-temperature performance of 850 °C are recorded. The L-shaped cantilever beams diaphragm allows the sensor measurements at 850 °C with a repeatability of 5.46%, a working frequency range of 100-1000 Hz, an experimental sensitivity of 389 mV/g, an overall stability of 8 jumps at its adjacent frequency resolution range over 150 measurements, a linearity of 0.9856 and a maximum relative error maintained below 1.72%. In the field of application, it also exhibits a good relative error of measurement respecting the technical specification of 5 Hz.

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It has long been expected that the coexistence of ferroelectric and ferrovalley polarizations in one magnetic semiconductor could offer the possibility to revolutionize electronic devices. In this study, monolayer and bilayer YI2 are studied. Monolayer YI2 is a ferromagnetic semiconductor and exhibits a valley polarization up to 105 meV. All of the present bilayer YI2 regardless of stacking orders show antiferromagnetic states. Interestingly, the bilayer YI2 with 3R-type stackings shows not only valley polarization but also unexpected ferroelectric polarization, proving the concurrent ferrovalley and multiferroics behaviors. Moreover, the valley polarization of 3R-type bilayer YI2 can be reversed by controlling the direction of ferroelectric polarization through an electric field or manipulating the magnetization direction using an external magnetic field. The amazing phenomenon is also demonstrated in 2D van der Waals LaI2 and GdBr2 bilayers. A design idea of multifunctional devices is proposed based on the concurrent ferrovalley and multiferroics characteristics.

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Single-molecule magnets (SMMs) have attracted much attention due to their potential applications in molecular spintronic devices. Rare earth SMMs are considered to be the most promising for application owing to their large magnetic moment and strong magnetic anisotropy. In this review, the recent progress in rare earth SMMs represented by mononuclear and dinuclear complexes is highlighted, especially for the modulation of magnetic anisotropy, effective energy barrier (Ueff) and blocking temperature (TB). The terbium- and dysprosium-based SMMs have a Ueff of 1541 cm-1 and an increased TB of 80 K. They break the boiling point temperature of liquid nitrogen. The development of the preparation technology of rare earth element SMMs is also summarized in an overview. This review has important implications and insights for the design and research of Ln-SMMs.

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Heterogeneous phase composite (HPC) flooding technology that is based on branched-preformed particle gel (B-PPG) is an important technology for enhancing oil recovery in high water-cut reservoirs. In this paper, we conducted a series of visualization experiments under the condition of developed high-permeability channels after polymer flooding, with respect to well pattern densification and adjustment, and HPC flooding and its synergistic regulation. The experiments show that for polymer-flooded reservoirs, HPC flooding can significantly reduce the water cut and increase oil recovery, but that the injected HPC system mainly advances along the high-permeability channel with limited sweep expansion. Furthermore, well pattern densification and adjustment can divert the original mainstream direction, which has a positive effect on HPC flooding, and can effectively expand the sweeping range under the synergistic effect of residual polymers. Due to the synergistic effect of multiple chemical agents in the HPC system, after well pattern densification and adjustment, the production time for HPC flooding with the water cut lower than 95% was significantly prolonged. In addition, conversion schemes, in which the original production well is converted into the injection well, are better than non-conversion schemes in terms of expanding sweep efficiency and enhancing oil recovery. Therefore, for well groups with obvious high-water-consuming channels after polymer flooding, the implementation of HPC flooding can be combined with well pattern conversion and intensification in order to further improve oil displacement.

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Two-dimensional ferrovalley materials should simultaneously possess three characteristics, that is, a Curie temperature beyond atmospheric temperature, perpendicular magnetic anisotropy, and large valley polarization for potential commercial applications. In this report, we predict two ferrovalley Janus RuClX (X = F, Br) monolayers by first-principles calculations and Monte Carlo simulations. The RuClF monolayer exhibited a valley-splitting energy as large as 194 meV, perpendicular magnetic anisotropy energy of 187 µeV per f.u., and Curie temperature of 320 K. Thus, spontaneous valley polarization at room temperature will be present in the RuClF monolayer, which is nonvolatile for spintronic and valleytronic devices. Although the valley-splitting energy of the RuClBr monolayer was as high as 226 meV with magnetic anisotropy energy of 1.852 meV per f.u., the magnetic anisotropy of the RuClBr monolayer was in-plane, and its Curie temperature was only 179 K. The orbital-resolved magnetic anisotropy energy revealed that the interaction between the occupied spin-up states of dyz and the unoccupied spin-down states of dz2 dominated the out-of-plane magnetic anisotropy in the RuClF monolayer, but the in-plane magnetic anisotropy of the RuClBr monolayer was mostly contributed by the coupling of the dxy and dx2-y2 orbitals. Interestingly, the valley polarizations in the Janus RuClF and RuClBr monolayers appeared in their valence band and conduction band, respectively. Thus, two anomalous valley Hall devices are proposed using the present Janus RuClF and RuClBr monolayers with hole and electron doping, respectively. This study provides interesting and alternative candidate materials for the development of valleytronic devices.

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Marsdenia tenacissima is a medicinal plant widely distributed in the calcium-rich karst regions of southwest China. However, the lack of a reference genome has hampered the implementation of molecular techniques in its breeding, pharmacology and domestication. We generated the chromosome-level genome assembly in Apocynaceae using combined SMRT sequencing and Hi-C. The genome length was 381.76 Mb, with 98.9% of it found on 11 chromosomes. The genome contained 222.63 Mb of repetitive sequences and 21 899 predicted gene models, with a contig N50 of 6.57 Mb. Phylogenetic analysis revealed that M. tenacissima diverged from Calotropis gigantea at least 13.43 million years ago. Comparative genomics showed that M. tenacissima underwent ancient shared whole-genome duplication. This event, together with tandem duplication, contributed to 70.71% of gene-family expansion. Both pseudogene analysis and selective pressure calculations suggested calcium-related adaptive evolution in the M. tenacissima genome. Calcium-induced differentially expressed genes (DEGs) were mainly enriched in cell-wall-related processes. Domains (e.g. Fasciclin and Amb_all) and cis-elements (e.g. MYB and MYC) frequently occurred in the coding and promoter regions of cell-wall DEGs, respectively, and the expression levels of these genes correlated significantly with those of calcium-signal-related transcription factors. Moreover, calcium addition increased tenacissoside I, G and H contents. The availability of this high-quality genome provides valuable genomic information for genetic breeding and molecular design, and lends insights into the calcium adaptation of M. tenacissima in karst areas.

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This paper presents a new method, a fast prediction method based on the Cartesian stiffness model and equivalent spring stiffness (FPM-CSES), to calculate displacement errors of deformation caused by low stiffness for industrial robot. First, the Cartesian stiffness model based on the Jacobian matrix was established for a robot, and then the displacement error model of deformations caused by external force was established based on Cartesian stiffness. Second, the transmission system of the robot's joint was analyzed, and an equivalent method for joint stiffness was presented based on a series spring system. Meanwhile, the stiffness of the key components including the servo motor, harmonic reducer, and timing belt was deduced in detail. Finally, a compared simulation and a measurement experiment were conducted on a 6-joint series robot. It was found that the FPM-CSES could calculate any configuration among the robot's workspace. Compared with the finite element analysis (FEA) method, the presented method is feasible and more efficient. The experimental results showed that the prediction accuracy of the FPM-CSES is rather high, with an average rate of more than 83.72%. Hence, the prediction method presented in this study is simple, fast, and reliable, and could be used to predict and analyze the displacement errors caused by the cutting force, and provide the basis for trajectory planning and error compensation, enhancing the robot's machining performance.

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The x-SnO2/α-Fe2O3 (x = 0.04, 0.07, and 0.1) heterogeneous composites were successfully prepared via a two-step solvothermal method. These composites were systematically characterized by the X-ray diffraction technique, field emission scanning electron microscopy, an energy dispersive spectrometer, X-ray photoelectron spectroscopy and a UV-visible spectrometer. It was found that SnO2 nanoparticles were uniformly decorated on the surface of α-Fe2O3 particles in these heterogeneous composites. A comparative study of methylene blue (MB) photodegradation by α-Fe2O3 and x-SnO2/α-Fe2O3 composites was carried out. All x-SnO2/α-Fe2O3 composites showed higher MB photodegradation efficiency than α-Fe2O3. When x = 0.07, the MB photodegradation efficiency can reach 97% in 60 min. Meanwhile, the first-order kinetic studies demonstrated that the optimal rate constant of 0.07-SnO2/α-Fe2O3 composite was 0.0537 min-1, while that of pure α-Fe2O3 was only 0.0191 min-1. The catalytic mechanism of MB photodegradation by SnO2/α-Fe2O3 was examined. The SnO2 can act as a sink and help the effective transfer of photo-generated electrons for decomposing hydrogen peroxide (H2O2) into active radicals. This work can provide a new insight into the catalytic mechanism of the photo-Fenton process.

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Mixed halide perovskites are promising memristive materials because of their excellent electronic-ionic properties. In this work, lead-free Cs2 AgBiBr6-x Clx (x=0, 0.2, 0.4, 0.6, 0.8, 1.0) double perovskite films were fabricated using a one-step solution spin-coating method in air. Moreover, the ITO/Cs2 AgBiBr6-x Clx /Al sandwich-like devices are fabricated to investigate the memristive behaviors. The present memristors exhibit nonvolatile and bipolar resistive switching behaviors without electroforming process. Interestingly, as the chloride content increases, the ON/OFF ratio of the device increases from 103 to 104 , the average SET voltage and the RESET voltage decrease from -0.40 V to -0.21 V and from 1.55 V to 1.34 V, respectively. In addition, resistance states of devices can be maintained after 100 switching cycles and 104  s of reading. This study provides new possibility for the development of low-power and environmentally friendly memristors.

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In this study, yttrium-doped CH3NH3PbI3 (Y-MAPbI3) and pure CH3NH3PbI3 (MAPbI3) perovskite films have been fabricated using a one-step solution spin coating method in a glove box. X-ray diffractometry and field-emission scanning electron microscopy were used to characterize the crystal structures and morphologies of perovskite films, respectively. It was found that the orientation of the crystal changed and the grains became more uniform in Y-MAPbI3 film, compared with the pure MAPbI3 perovskite film. The films were used to prepare the resistive switching memory devices with the device structure of Al/Y-MAPbI3 (MAPbI3)/ITO-glass. The memory performance of both devices was studied and showed a bipolar resistive switching behavior. The Al/MAPbI3/ITO device had an endurance of about 328 cycles. In contrast, the Al/Y-MAPbI3/ITO device exhibited an enhanced performance with a long endurance up to 3000 cycles. Moreover, the Al/Y-MAPbI3/ITO device also showed a higher ON/OFF ratio of over 103, long retention time (≥104 s), lower operation voltage (±0.5 V) and outstanding reproducibility. Additionally, the conduction mechanism of the high resistance state transformed from space-charge limited current for a Y free device to the Schottky emission after Y doping. The present results indicate that the Al/Y-MAPbI3/ITO device has a great potential to be used in high-performance memory devices.

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In this paper, we propose and experimentally demonstrate a photonic scheme based on frequency doubling and photo-mixing to generate dual-chirp signals in the terahertz (THz) band. A broadband dual-chirp THz signal with 28 GHz bandwidth, ranging from 364 GHz to 392 GHz, is successfully generated in the proof-of-concept experiment, resulting in a chirp rate of 0.028 GHz/ns for both up chirp and down chirp signals. THz dual-chirp signals featuring a large bandwidth are beneficial to enable high resolution and high accuracy by mitigating the range measurement error induced by the range-Doppler coupling effect. Therefore, the proposed system is expected to have a great potential for future THz radar applications.

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Full-electrical writing and reading of magnetization states are vital for the development of next-generation spintronic devices with high density and ultralow-power consumption. Here, we proposed a method to realize the full-electrical writing and reading of magnetization states via a structural design, which only requires a symmetrical device structure and an antiparallel magnetic configuration. CrBr3, h-BN, and 1T-MnSe2 were selected to construct the device of CrBr3/h-BN/1T-MnSe2/h-BN/CrBr3, where the magnetization of two CrBr3 layers was fixed to the antiparallel state. By changing the direction and magnitude of the applied electric field, it is proved that the magnetization of 1T-MnSe2 could be reversed. Moreover, the device energies before and after the magnetization reversal are the same when the applied electric field is removed due to the structural symmetry. Meanwhile, the magnetic anisotropy energy of 1T-MnSe2 could induce an energy barrier, to guarantee the nonvolatile magnetization reversal in the present device. In addition, the tunnel magnetoresistance ratio was found up to 421%, showing a promising application to full-electrically write and read magnetization in spintronics. The present study likely promotes the development of full-electrical and ultralow-power spintronics devices.

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As an essential component in applications such as video coding, autonomous navigation, and surveillance cameras, efficient and robust motion estimation is always required. This paper proposes a robust block-matching algorithm consisting of a rough matching step and a fine matching step for motion estimation. In the coarse matching step, an improved adaptive rood pattern search strategy combined with an anti-interference similarity criterion is developed to improve the computational efficiency and robustness. In the fine matching step, after performing a subpixel estimation procedure, a bilateral verification scheme is demonstrated to decrease the motion estimation errors caused by environmental disturbances. Experiments are carried out over popular video and image sequences, and several measurement indexes are used to quantify the performance of the proposed method and other motion estimation methods. Comparative analysis and quantitative evaluation demonstrate that the proposed method exhibits strong robustness and can achieve a good balance between computational efficiency and complexity.