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Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics.

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ZnS:Ag2S porous nanostructures are prepared by a simple ion-exchange route using ZnS nanosheets as sacrificial templates. In solutions of different Ag ion concentrations, ZnS nanosheets are partially converted to Ag2S, resulting in porous ZnS:Ag2S nanosheet composites with different pore sizes. With the Ag2S nanocrystals playing the role of hole scavengers, the porous nanosheets exhibit a high photocatalytic H2 generation rate of 104.9 µmol/h/g without using any noble metal cocatalyst.

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We report tunable band gaps and transport properties of B-doped graphenes that were achieved via controllable doping through reaction with the ion atmosphere of trimethylboron decomposed by microwave plasma. Both electron energy loss spectroscopy and X-ray photoemission spectroscopy analyses of the graphene reacted with ion atmosphere showed that B atoms are substitutionally incorporated into graphenes without segregation of B domains. The B content was adjusted over a range of 0-13.85 atom % by controlling the ion reaction time, from which the doping effects on transport properties were quantitatively evaluated. Electrical measurements from graphene field-effect transistors show that the B-doped graphenes have a distinct p-type conductivity with a current on/off ratio higher than 10(2). Especially, the band gap of graphenes is tuned from 0 to ~0.54 eV with increasing B content, leading to a series of modulated transport properties. We believe the controllable doping for graphenes with predictable transport properties may pave a way for the development of graphene-based devices.

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Arrays of well-aligned AlN nanowires (NWs) with tunable p-type conductivity were synthesized on Si(111) substrates using bis(cyclopentadienyl)magnesium (Cp(2)Mg) vapor as a doping source by chemical vapor deposition. The Mg-doped AlN NWs are single-crystalline and grow along the [001] direction. Gate-voltage-dependent transport measurements on field-effect transistors constructed from individual NWs revealed the transition from n-type conductivity in the undoped AlN NWs to p-type conductivity in the Mg-doped NWs. By adjusting the doping gas flow rate (0-10 sccm), the conductivity of AlN NWs can be tuned over 7 orders of magnitude from (3.8-8.5) × 10(-6) Ω(-1) cm(-1) for the undoped sample to 15.6-24.4 Ω(-1) cm(-1) for the Mg-doped AlN NWs. Hole concentration as high as 4.7 × 10(19) cm(-3) was achieved for the heaviest doping. In addition, the maximum hole mobility (∼6.4 cm(2)/V s) in p-type AlN NWs is much higher than that of Mg-doped AlN films (∼1.0 cm(2)/V s). (2) The realization of p-type AlN NWs with tunable electrical transport properties may open great potential in developing practical nanodevices such as deep-UV light-emitting diodes and photodetectors.

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Highly ordered arrays of Cu-rich and -deficient CuInSe(2) nanotubes as well as ZnO/CuInSe(2) core/sheath nanocables have been synthesized on glass substrates by using ZnO nanorod arrays as sacrificial templates via a low-cost solution method. Chemical conversions from hexagonal ZnO to cubic ZnSe, hexagonal CuSe and tetragonal CuInSe(2) are demonstrated as a novel means for synthesis of I-III-VI nanomaterials. Large differences in their solubility product constant (K(sp)) are crucial for direct exchange in the conversions. In solvothermal reaction of ZnO/CuSe core/shell nanocables with InCl(3), the triethylene glycol solvent serves as a reducing agent for the reduction of cupric (Cu(2+)) to cuprous (Cu(+)) ions and also as an agent for the dissolution of ZnO cores. The absorption coefficient of the CuInSe(2) nanotubes in the visible region is on the order of 10(4) cm(-1). Photoelectrochemical solar cells were fabricated with arrays of ZnO/Cu(1.57±0.10)In(0.68±0.10)Se(2) and ZnO/CuSe nanocables. It was found that power conversion efficiency of the ZnO/Cu(1.57±0.10)In(0.68±0.10)Se(2) cell is about two times higher than that based on ZnO/CuSe.

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This paper presents a systematic investigation on the incorporation of chemical exfoliation graphene sheets (GS) in TiO(2) nanoparticle films via a molecular grafting method for dye-sensitized solar cells (DSSCs). By controlling the oxidation time in the chemical exfoliation process, both high conductivity of reduced GS and good attachment of TiO(2) nanoparticles on the GS were achieved. Uniform GS/TiO(2) composite films with large areas on conductive glass were prepared by electrophoretic deposition, and the incorporation of GS significantly improved the conductivity of the TiO(2) nanoparticle film by more than 2 orders of magnitude. Moreover, the power conversion efficiency for DSSC based on GS/TiO(2) composite films is more than 5 times higher than that based on TiO(2) alone, indicating that the incorporation of GS is an efficient means for enhancing the photovoltaic (PV) performance. The better PV performance of GS/TiO(2) DSSC is also attributed to the better dye loading of GS/TiO(2) film than that of TiO(2) film. The effect of GS content on the PV performances was also investigated. It was found that the power conversion efficiency increased first and then decreased with the increasing of GS concentration due to the decrease in the transmittance at high GS content. Further improvements can be expected by fully optimizing fabrication conditions and device configuration, such as increasing dye loading via thicker films. The present synthetic strategy is expected to lead to a family of composites with designed properties.

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Facile chemical approaches for the controllable synthesis of CuSe, CuInSe2 nanowire, and CuInSe2/CuInS2 core/shell nanocable bundles were developed. Hexagonal CuSe nanowire bundles with lengths up to hundreds of micrometers, consisting of many aligned nanowires with a diameter of about 10-15 nm, were prepared by reacting cubic Cu(2-x)Se nanowire bundles with a sodium citrate solution at room temperature. The CuSe nanowire bundles were then used as self-sacrificial templates for making bundles of tetragonal chalcopyrite CuInSe2 nanowires by reacting with InCl3 via a solvothermal process. Furthermore, bundles of CuInSe2/CuInS2 core/shell nanocables were obtained by adding sulfur to the reaction system, and the shell thickness of the polycrystalline CuInS2 in the nanocables increased with increasing S/Se molar ratios. It was found that the small radius of copper ions allows their fast outward diffusion from the interior to the surface of nanowires to react with sulfur atoms/anions and indium ions to form a CuInS2 shell. Enhanced optical absorption in the vis-NIR region of CuInSe2/CuInS2 core/shell nanocable bundles is demonstrated, which is considered beneficial for applications in optoelectronic devices and solar energy conversion.

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