RESUMEN
Advancements in ultrafast electron microscopy have allowed elucidation of spatially selective structural dynamics. However, as the spatial resolution and imaging capabilities have made progress, quantitative characterization of the electron pulse trains has not been reported at the same rate. In fact, inexperienced users have difficulty replicating the technique because only a few dedicated microscopes have been characterized thoroughly. Systems replacing laser driven photoexcitation with electrically driven deflectors especially suffer from a lack of quantified characterization because of the limited quantity. The primary advantages to electrically driven systems are broader frequency ranges, ease of use and simple synchronization to electrical pumping. Here, we characterize the technical parameters for electrically driven UEM including the shape, size and duration of the electron pulses using low and high frequency chopping methods. At high frequencies, pulses are generated by sweeping the electron beam across a chopping aperture. For low frequencies, the beam is continuously forced off the optic axis by a DC potential, then momentarily aligned by a countering pulse. Using both methods, we present examples that measure probe durations of 2 ns and 10 ps for the low and high frequency techniques, respectively. We also discuss how the implementation of a pulsed probe affects STEM imaging conditions by adjusting the first condenser lens.
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Spherical aberration correctors using hexapole fields are widely used and are pivotal in atomic-resolution imaging. Although hexapole-field correctors increase the aberration-free angular range, the angular range is limited by higher-order aberrations, such as six-fold astigmatism or sixth-order three-lobe aberration. Here, we propose two types of spherical aberration correctors to compensate for geometrical aberrations up to the sixth order. The first is a four-hexapole corrector, while the second is a two-hexapole corrector, where each hexapole has a nonuniform magnetic field. The four-hexapole corrector can increase the aberration-free angle up to almost 100 mrad. The two-hexapole corrector with a nonuniform magnetic field has a smaller aberration-free angle than that of the four-hexapole corrector, but it is more compact. The dominant residual aberration in these correctors is seventh-order spherical aberration or chaplet aberration, which is seventh-order geometrical aberration.
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Ultimate resolution in scanning transmission electron microscopy (STEM) with state-of-the-art aberration correctors requires careful tuning of the experimental parameters. The optimum aperture semi-angle depends on the chosen high tension, the chromatic aberration and the energy width of the source as well as on potentially limiting intrinsic residual aberrations. In this paper we derive simple expressions and criteria for choosing the aperture semi-angle and for counterbalancing the intrinsic sixth-order three-lobe aberration of two-hexapole aberration correctors by means of the fourth-order three-lobe aberration. It is noteworthy that for such an optimally adjusted electron probe the so-called flat area of the Ronchigram is explicitly not maximized. The above considerations are validated by experiments with a CEOS ASCOR in a C-FEG-equipped JEOL NEOARM operated at 60 kV. Sub-Angstrom resolution is demonstrated for a Si[112] single crystal as well as for a single-layered MoS2 crystalline film. Lattice reflections of 73 pm for silicon and 93 pm for molybdenum disulfide are visible in the Fourier transform of the images, respectively. Moreover, single sulfur vacancies can be clearly identified in the MoS2.
RESUMEN
Depth resolution in scanning transmission electron microscopy (STEM) is physically limited by the illumination angle. In recent notable progress on aberration correction technology, the illumination angle is significantly improved to be larger than 60 milliradians, which is 2 or 3 times larger than those in the previous generation. However, for three-dimensional depth sectioning with the large illumination angles, it is prerequisite to ultimately minimize lower orders of aberrations such as 2- and 3-fold astigmatisms and axial coma. Here, we demonstrate a live aberration correction using atomic-resolution STEM images rather than Ronchigram images. The present method could save the required time for aberration correction, and moreover, it is possible to build up a fully automated program. We demonstrate the method should be useful not only for axial depth sectioning but also phase imaging in STEM including differential phase-contrast imaging.
RESUMEN
Depth resolution in scanning transmission electron microscopy (STEM) is physically limited by the illumination angle. In recent notable progress on aberration correction technology, the illumination angle is significantly improved to be larger than 60 milliradians, which is 2 or 3 times larger than those in the previous generation. However, for three-dimensional depth sectioning with the large illumination angles, it is prerequisite to ultimately minimize lower orders of aberrations such as 2- and 3-fold astigmatisms and axial coma. Here, we demonstrate a live aberration correction using atomic-resolution STEM images rather than Ronchigram images. The present method could save the required time for aberration correction, and moreover, it is possible to build up a fully automated program. We demonstrate the method should be useful not only for axial depth sectioning but also phase imaging in STEM including differential phase-contrast imaging.
RESUMEN
Electron ptychography has recently attracted considerable interest for high resolution phase-sensitive imaging. However, to date studies have been mainly limited to radiation resistant samples as the electron dose required to record a ptychographic dataset is too high for use with beam-sensitive materials. Here we report defocused electron ptychography using a fast, direct-counting detector to reconstruct the transmission function, which is in turn related to the electrostatic potential of a two-dimensional material at atomic resolution under various low dose conditions.
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We report a method for quantitative phase recovery and simultaneous electron energy loss spectroscopy analysis using ptychographic reconstruction of a data set of "hollow" diffraction patterns. This has the potential for recovering both structural and chemical information at atomic resolution with a new generation of detectors.
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When secondary domains nucleate and grow on the surface of monolayer MoS2, they can extend across grain boundaries in the underlying monolayer MoS2 and form overlapping sections. We present an atomic level study of overlapping antiphase grain boundaries (GBs) in MoS2 monolayer-bilayers using aberration-corrected annular dark field scanning transmission electron microscopy. In particular we focus on the antiphase GB within a monolayer and track its propagation through an overlapping bilayer domain. We show that this leads to an atomically sharp interface between 2H and 3R interlayer stacking in the bilayer region. We have studied the micro-nanoscale "meandering" of the antiphase GB in MoS2, which shows a directional dependence on the density of 4 and 8 member ring defects, as well as sharp turning angles 90°-100° that are mediated by a special 8-member ring defect. Density functional theory has been used to explore the overlapping interlayer stacking around the antiphase GBs, confirming our experimental findings. These results show that overlapping secondary bilayer MoS2 domains cause atomic structure modification to underlying anti-phase GB sites to accommodate the van der Waals interactions.
RESUMEN
High-energy irradiation of materials can lead to void formation due to the aggregation of vacancies, reducing the local stress in the system. Studying void formation and its interplay with vacancy clusters in bulk materials at the atomic level has been challenging due to the thick volume of 3D materials, which generally limits high-resolution transmission electron microscopy. The thin nature of 2D materials is ideal for studying fundamental material defects such as dislocations and crack tips and has potential to reveal void formation by vacancy aggregation in detail. Here, using atomic-resolution in situ transmission electron microscopy of 2D monolayer MoS2, we capture rapid thermal diffusion of S vacancies into ultralong (â¼60 nm) 1D S vacancy channels that initiate void formation at high vacancy densities. Strong interactions are observed between the 1D channels and void growth, whereby Mo and S atoms are funneled back and forth between the void edge and the crystal surface to enable void enlargement. Preferential void growth up to 100 nm is shown to occur by rapid digestion of 1D S vacancy channels as they make contact. These results reveal the atomistic mechanisms behind void enlargement in 2D materials under intense high-energy irradiation at high temperatures and the existence of ultralong 1D vacancy channels. This knowledge may also help improve the understanding of void formation in other systems such as nuclear materials, where direct visualization is challenging due to 3D bulk volume.
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One of the most attractive applications of carbon nanomaterials is as catalysts, due to their extreme surface-to-volume ratio. The substitution of C with heteroatoms (typically B and N as p- and n-dopants) has been explored to enhance their catalytic activity. Here we show that encapsulation within weakly doping macrocycles can be used to modify the catalytic properties of the nanotubes towards the reduction of nitroarenes, either enhancing it (n-doping) or slowing it down (p-doping). This artificial regulation strategy presents a unique combination of features found in the natural regulation of enzymes: binding of the effectors (the macrocycles) is noncovalent, yet stable thanks to the mechanical link, and their effect is remote, but not allosteric, since it does not affect the structure of the active site. By careful design of the macrocycles' structure, we expect that this strategy will contribute to overcome the major hurdles in SWNT-based catalysts: activity, aggregation, and specificity.
RESUMEN
We show that Pt nanoclusters preferentially nucleate along the grain boundaries (GBs) in polycrystalline MoS2 monolayer films, with dislocations acting as the seed site. Atomic resolution studies by aberration-corrected annular dark-field scanning transmission electron microscopy reveal periodic spacing of Pt nanoclusters with dependence on GB tilt angles and random spacings for the antiphase boundaries ( i.e., 60°). Individual Pt atoms are imaged within the dislocation core sections of the GB region, with various positions observed, including both the substitutional sites of Mo and the hollow center of the octahedral ring. The evolution from single atoms or small few atom clusters to nanosized particles of Pt is examined at the atomic level to gain a deep understanding of the pathways of Pt seed nucleation and growth at the GB. Density functional theory calculations confirm the energetic advantage of trapping Pt at dislocations on both the antiphase boundary and the small-angle GB rather than on the pristine lattice. The selective decoration of GBs by Pt nanoparticles also has a beneficial use to easily identify GB areas during microscopic-scale observations and track long-range nanoscale variances of GBs with spatial detail not easy to achieve using other methods. We show that GBs have nanoscale meandering across micron-scale distances with no strong preference for specific lattice directions across macroscopic ranges.
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Higher order geometrical aberration correctors for transmission electron microscopes are essential for atomic-resolution imaging, especially at low-accelerating voltages. We quantitatively calculated the residual aberrations of fifth-order aberration correctors to determine the dominant aberrations. The calculations showed that the sixth-order three-lobe aberration was dominant when fifth-order aberrations were corrected by using the double-hexapole or delta types of aberration correctors. It was also deduced that the sixth-order three-lobe aberration was generally smaller in the delta corrector than in the double-hexapole corrector. The sixth-order three-lobe aberration was counterbalanced with a finite amount of the fourth-order three-lobe aberration and 3-fold astigmatism. In the experiments, we used a low-voltage microscope equipped with delta correctors for probe- and image-forming systems. Residual aberrations in each system were evaluated using Ronchigrams and diffractogram tableaux, respectively. The counterbalanced aberration correction was applied to obtain high-resolution transmission electron microscopy images of graphene and WS2 samples at 60 and 15 kV, respectively.
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The achievement of a fine electron probe for high-resolution imaging in scanning transmission electron microscopy requires technological developments, especially in electron optics. For this purpose, we developed a microscope with a fifth-order aberration corrector that operates at 300 kV. The contrast flat region in an experimental Ronchigram, which indicates the aberration-free angle, was expanded to 70 mrad. By using a probe with convergence angle of 40 mrad in the scanning transmission electron microscope at 300 kV, we attained the spatial resolution of 40.5 pm, which is the projected interatomic distance between Ga-Ga atomic columns of GaN observed along [212] direction.
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We have studied the atomic structure of small secondary domains that nucleate on monolayer MoS2 grown by chemical vapour deposition (CVD), which form the basis of bilayer MoS2. The small secondary bilayer domains have a faceted geometry with three-fold symmetry and adopt two distinct orientations with 60° rotation relative to an underlying monolayer MoS2 single crystal sheet. The two distinct orientations are associated with the 2H and 3R stacking configuration for bilayer MoS2. Atomic resolution images have been recorded using annular dark field scanning transmission electron microscopy (ADF-STEM) that show the edge termination, lattice orientation and stacking sequence of the bilayer domains relative to the underlying monolayer MoS2. These results provide important insights that bilayer MoS2 growth from 60° rotated small nuclei on the surface of monolayer MoS2 could lead to defective boundaries when merged to form larger continuous bilayer regions and that pure AA' or AB bilayer stacking may be challenging unless from a single seed.
RESUMEN
The edges of 2D materials show novel electronic, magnetic, and optical properties, especially when reduced to nanoribbon widths. Therefore, methods to create atomically flat edges in 2D materials are essential for future exploitation. Atomically flat edges in 2D materials are found after brittle fracture or when electrically biasing, but a simple scalable approach for creating atomically flat periodic edges in monolayer 2D transition metal dichalcogenides has yet to be realized. Here, we show how heating monolayer MoS2 to 800 °C in vacuum produces atomically flat Mo terminated zigzag edges in nanoribbons. We study this at the atomic level using an ultrastable in situ heating holder in an aberration-corrected transmission electron microscope and discriminating Mo from S at the edge, revealing unique Mo terminations for all zigzag orientations that remain stable and atomically flat when cooling back to room temperature. Highly faceted MoS2 nanoribbon constrictions are produced with Mo rich edge structures that have theoretically predicted spin separated transport channels, which are promising for spin logic applications.
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Pt-nanocrystal:MoS2 hybrid materials have promising catalytic properties for hydrogen evolution, and understanding their detailed structures at the atomic scale is crucial to further development. Here, we use an in situ heating holder in an aberration-corrected transmission electron microscope to study the formation of Pt nanocrystals directly on the surface of monolayer MoS2 from a precursor on heating to 800 °C. Isolated single Pt atoms and small nanoclusters are observed after in situ heating, with two types of preferential alignment between the Pt nanocrystals and the underlying monolayer MoS2. Strain effects and thickness variations of the ultrasmall Pt nanocrystal supported on MoS2 are studied, revealing that single atomic planes are formed from a nonlayered face-centered cubic bulk Pt configuration with a lattice expansion of 7-10% compared to that of bulk Pt. The Pt nanocrystals are surrounded by an amorphous carbon layer and in some cases have etched the local surrounding MoS2 material after heating. Electron beam irradiation also initiates Pt nanocrystal etching of the local MoS2, and we study this process in real time at atomic resolution. These results show that the presence of carbon around the Pt nanocrystals does not affect their epitaxial relationship with the MoS2 lattice. Single Pt atoms within the carbon layer are also immobilized at high temperature. These results provide important insights into the formation of Pt:MoS2 hybrid materials.
RESUMEN
The geometric and chromatic aberration coefficients of the probe-forming system in an aberration corrected transmission electron microscope have been measured using a Ronchigram recorded from monolayer graphene. The geometric deformations within individual local angular sub-regions of the Ronchigram were analysed using an auto-correlation function and the aberration coefficients for the probe forming lens were calculated. This approach only requires the acquisition of a single Ronchigram allowing rapid measurement of the aberration coefficients. Moreover, the measurement precision for defocus and two-fold astigmatism is improved over that which can be achieved from analysis of Ronchigrams recorded from amorphous films. This technique can also be applied to aberration corrected STEM imaging of any hexagonal two-dimensional material.