RESUMEN
In this study, a high-photoresponsivity self-powered deep ultraviolet (DUV) photodetector based on an Ag2O/ß-Ga2O3 heterojunction was fabricated by depositing a p-type Ag2O thin film onto an n-type ß-Ga2O3 layer. The device characteristics after post-annealing at temperatures ranging from 0 to 400 °C were investigated. Our DUV devices exhibited typical rectification characteristics. At a post-annealing temperature of 300 °C, the as-fabricated device had a low leakage current of 4.24 × 10-11 A, ideality factor of 2.08, and a barrier height of 1.12 eV. Moreover, a high photo-responsivity of 12.87 mA/W was obtained at a 100 µW/cm2 light intensity at a 254 nm wavelength at zero bias voltage, the detectivity was 2.70 × 1011 Jones, and the rise and fall time were 29.76, 46.73 ms, respectively. Based on these results, the Ag2O/ß-Ga2O3 heterojunction photodetector operates without an externally applied voltage and has high responsivity, which will help in the performance improvement of ultraviolet sensing systems.
RESUMEN
Self-powered deep-ultraviolet photodetectors have received considerable attention in recent years because of their efficiency, reliability, and various applications in civilian and military fields. Herein, a Ag/Ag2O layer is continuously deposited on a ß-Ga2O3 epitaxial layer by a facing target sputtering system without opening the chamber, which has an advantage in time and cost. A p-n junction photodetector was constructed through the Ag2O/ß-Ga2O3 heterojunction and by varying the thickness of the Ag film, which was controlled by the sputtering time. The effect of top electrode thickness on the photoresponse characteristics of photodetectors was studied. Because thin Ag films have low surface roughness, indicating low optical loss and good interfacial conditions, photodetectors using a thin Ag film as the top electrode exhibit high photoresponsivity. However, Ag films that were thinner than the threshold thickness, which is the minimum thickness required to form a continuous, homogeneous surface film, exhibited rather low performance owing to the high reflection and scattering caused by the inhomogeneous surface morphology. The as-fabricated photodetector with a 20 nm Ag film presents a high on/off ratio of 3.43 × 108, responsivity and detectivity of 25.65 mA/W and 6.10 × 1011 Jones, respectively, and comparable rise and decay times of 108 and 80 ms, respectively. Additionally, even after three months of storage in an ambient environment, the photoresponse of the photodetector was maintained, indicating good stability in air. These results suggest that Ag2O/ß-Ga2O3 heterojunction-based photodetectors with thin Ag films can be used in various applications requiring deep-ultraviolet detection without an external power supply.
RESUMEN
Silicon Carbide (SiC)-based devices have been proposed to replace conventional silicon-based devices based on their physical properties and have become an active research topic. Several studies have reported a high breakdown voltage in SiC-powered devices in the implanted limited field ring structure. However, the problems of ion-implanted edge termination in field-limited rings appear to be associated with the ion implantation process, such as damage to the grid and leakage current increases due to ion implantation. In this paper, SiC Schottky Barrier Diode (SBD) Floating Metal Ring (FMR) edge-termination structures are produced regardless of whether we are using ion implantation and proceed with the breakdown voltage comparison. The experimental method for producing an SiC SBD after FMR structural design through a simulation was performed with a comparative analysis of the breakdown voltage with No-FMR and FMR. We measured the breakdown voltage of the fabricated No-FMR and FMR, and the results confirmed that FMR SiC SBD was approximately 35% higher than the breakdown voltage No-FMR. It was confirmed that the breakdown voltage increased due to the balancing effect of the electric field structure of FMR.
RESUMEN
In this paper, we present the preparation and characterization of Schottky barrier diodes based on silicon carbide with various Schottky metal layer thickness values. In this structure, molybdenum and aluminum were employed as the Schottky barrier metal and top electrode, respectively. Schottky metal layers were deposited with thicknesses ranging from 1000 to 3000 Å, and top electrodes were deposited with thickness as much as 3000 Å. The deposition of both metal layers was performed using the facing target sputtering (FTS) method, and the fabricated samples were annealed with the tubular furnace at 300 degrees C under argon ambient for 10 min. The Schottky barrier height, series resistance, and ideality factor was calculated from the forward I-V characteristic curve using the methods proposed by Cheung and Cheung, and by Norde. For as-deposited Schottky diodes, we observed an increase of the threshold voltage (V(T)) as the thickness of the Schottky metal layer increased. After the annealing, the Schottky barrier heights (SBHs) of the diodes, including Schottky metal layers of over 2000 Å, increased. In the case of the Schottky metal layer deposited to 1000 Å, the barrier heights decreased due to the annealing process. This may have been caused by the interfacial penetration phenomenon through the Schottky metal layer. For variations of V(T), the SBH changed with a similar tendency. The ideality factor and series resistance showed no significant changes before or after annealing. This indicates that this annealing condition is appropriate for Mo SiC structures. Our results confirm that it is possible to control V(T) by adjusting the thickness of the Schottky metal layer.