Long Electrical Stability on Dual Acceptor p-Type ZnO:Ag,N Thin Films.
Micromachines (Basel)
; 15(6)2024 Jun 18.
Article
em En
| MEDLINE
| ID: mdl-38930770
ABSTRACT
p-type Ag-N dual acceptor doped ZnO thin films with long electrical stability were deposited by DC magnetron reactive co-sputtering technique. After deposition, the films were annealed at 400 °C for one hour in a nitrogen-controlled atmosphere. The deposited films were amorphous. However, after annealing, they crystallize in the typical hexagonal wurtzite structure of ZnO. The Ag-N dual acceptors were incorporated substitutionally in the structure of zinc oxide, and achieving that; the three samples presented the p-type conductivity in the ZnO. Initial electrical properties showed a low resistivity of from 1 to 10-3 Ω·cm, Hall mobility of tens cm2/V·s, and a hole concentration from 1017 to 1019 cm-3. The electrical stability analysis reveals that the p-type conductivity of the ZnOAg,N films is very stable and does not revert to n-type, even after 36 months of aging. These results reveal the feasibility of using these films for applications in short-wavelength or transparent optoelectronic devices.
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1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Micromachines (Basel)
Ano de publicação:
2024
Tipo de documento:
Article
País de afiliação:
México
País de publicação:
Suíça