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Analytical Modeling and Optimization of Cu2ZnSn(S,Se)4 Solar Cells with the Use of Quantum Wells under the Radiative Limit.
Rodriguez-Osorio, Karina G; Morán-Lázaro, Juan P; Ojeda-Martínez, Miguel; Montoya De Los Santos, Isaac; Ouarie, Nassima El; Feddi, El Mustapha; Pérez, Laura M; Laroze, David; Routray, Soumyaranjan; Sánchez-Rodríguez, Fernando J; Courel, Maykel.
Afiliação
  • Rodriguez-Osorio KG; Centro Universitario de los Valles, Universidad de Guadalajara, Carretera Guadalajara-Ameca Km. 45.5, Ameca C.P. 46600, Jalisco, Mexico.
  • Morán-Lázaro JP; Centro Universitario de los Valles, Universidad de Guadalajara, Carretera Guadalajara-Ameca Km. 45.5, Ameca C.P. 46600, Jalisco, Mexico.
  • Ojeda-Martínez M; Centro Universitario de los Valles, Universidad de Guadalajara, Carretera Guadalajara-Ameca Km. 45.5, Ameca C.P. 46600, Jalisco, Mexico.
  • Montoya De Los Santos I; Instituto de Estudios de la Energía, Universidad del Istmo, Santo Domingo Tehuantepec C.P. 70760, Oaxaca, Mexico.
  • Ouarie NE; Group of Optoelectronic of Semiconductors and Nanomaterials, ENSAM, Mohammed V University in Rabat, Rabat 10100, Morocco.
  • Feddi EM; Group of Optoelectronic of Semiconductors and Nanomaterials, ENSAM, Mohammed V University in Rabat, Rabat 10100, Morocco.
  • Pérez LM; Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid, Ben Guerir 43150, Morocco.
  • Laroze D; Departamento de Física, FACI, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile.
  • Routray S; Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile.
  • Sánchez-Rodríguez FJ; Department of Electronics and Communication Engineering, SRM Institute of Science and Technology, Chennai 603203, India.
  • Courel M; Facultad de Ciencias Físico-Matemáticas, Universidad Autónoma de Sinaloa, Culiacán C.P. 80010, Sinaloa, Mexico.
Nanomaterials (Basel) ; 13(14)2023 Jul 12.
Article em En | MEDLINE | ID: mdl-37513069
In this work, we present a theoretical study on the use of Cu2ZnSn(S,Se)4 quantum wells in Cu2ZnSnS4 solar cells to enhance device efficiency. The role of different well thickness, number, and S/(S + Se) composition values is evaluated. The physical mechanisms governing the optoelectronic parameters are analyzed. The behavior of solar cells based on Cu2ZnSn(S,Se)4 without quantum wells is also considered for comparison. Cu2ZnSn(S,Se)4 quantum wells with a thickness lower than 50 nm present the formation of discretized eigenstates which play a fundamental role in absorption and recombination processes. Results show that well thickness plays a more important role than well number. We found that the use of wells with thicknesses higher than 20 nm allow for better efficiencies than those obtained for a device without nanostructures. A record efficiency of 37.5% is achieved when 36 wells with a width of 50 nm are used, considering an S/(S + Se) well compositional ratio of 0.25.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: México País de publicação: Suíça

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: México País de publicação: Suíça