Chemisorption Competition between H2O and H2 for Sites on the Si Surface under Xe+ Ion Bombardment: An XPS Study.

Antunes, Vinicius G; Figueroa, Carlos A; Alvarez, Fernando

Chemisorption Competition between H₂O and H₂ for Sites on the Si Surface under Xe⁺ Ion Bombardment: An XPS Study.

Antunes, Vinicius G; Figueroa, Carlos A; Alvarez, Fernando.

Afiliação

Antunes VG; Universidade Estadual de Campinas, IFGW, Campinas, SP 13083-970, Brazil.
Figueroa CA; Laboratoire de Physique des Gaz et des Plasmas, Université Paris-Saclay, CNRS, 91405, Orsay, France.
Alvarez F; Universidade de Caxias do Sul, PGMAT, Caxias do Sul, RS 95070-560, Brazil.

Langmuir ; 38(6): 2109-2116, 2022 Feb 15.

Article em En | MEDLINE | ID: mdl-35113576

RESUMO

This paper reports the competition of H2O (residual) and H2 by site (defects) on the Si surface, created by Xe+ ion bombardment. X-ray photoelectron spectroscopy (XPS) in an ultrahigh vacuum system attached to the sample preparation chamber provided the data for the analyses. As hydrogen cannot be detected by XPS, an indirect method to evaluate the O and H cover ratio was developed. The hydrogen passivation effect obtained by the formation of the Si-H bond due to H2 chemisorption limits Si-OH and Si-O-Si bonds, which are products of H2O dissociation. In addition, the results have shown that Xe+ ion bombardment diminished the H2 chemisorption energy barrier onto Si.

Texto completo

Adicionar na Minha BVS

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Langmuir Assunto da revista: QUIMICA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Brasil País de publicação: Estados Unidos

Texto completo

Adicionar na Minha BVS

Imprimir

XML

PubMed Links

Buscar no Google