Growth and Self-Assembly of Siliconâ»Silicon Carbide Nanoparticles into Hybrid Worm-Like Nanostructures at the Silicon Wafer Surface.
Nanomaterials (Basel)
; 8(11)2018 Nov 20.
Article
em En
| MEDLINE
| ID: mdl-30463292
This work describes the growth of siliconâ»silicon carbide nanoparticles (Siâ»SiC) and their self-assembly into worm-like 1D hybrid nanostructures at the interface of graphene oxide/silicon wafer (GO/Si) under Ar atmosphere at 1000 °C. Depending on GO film thickness, spread silicon nanoparticles apparently develop on GO layers, or GO-embedded Siâ»SiC nanoparticles self-assembled into some-micrometers-long worm-like nanowires. It was found that the nanoarrays show that carbonâ»silicon-based nanowires (CSNW) are standing on the Si wafer. It was assumed that Si nanoparticles originated from melted Si at the Si wafer surface and GO-induced nucleation. Additionally, a mechanism for the formation of CSNW is proposed.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanomaterials (Basel)
Ano de publicação:
2018
Tipo de documento:
Article
País de afiliação:
México
País de publicação:
Suíça