Raman study of ion-induced defects in N-layer graphene.
J Phys Condens Matter
; 22(33): 334204, 2010 Aug 25.
Article
em En
| MEDLINE
| ID: mdl-21386494
Raman scattering is used to study the effect of low energy (90 eV) Ar(+) ion bombardment in graphene samples as a function of the number of layers N. The evolution of the intensity ratio between the G band (1585 cm(-1)) and the disorder-induced D band (1345 cm(-1)) with ion fluence is determined for mono-, bi-, tri- and â¼50-layer graphene samples, providing a spectroscopy-based method to study the penetration of these low energy Ar(+) ions in AB Bernal stacked graphite, and how they affect the graphene sheets. The results clearly depend on the number of layers. We also analyze the evolution of the overall integrated Raman intensity and the integrated intensity for disorder-induced versus Raman-allowed peaks.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Assunto principal:
Análise Espectral Raman
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Nanoestruturas
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Grafite
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Modelos Químicos
Idioma:
En
Revista:
J Phys Condens Matter
Assunto da revista:
BIOFISICA
Ano de publicação:
2010
Tipo de documento:
Article
País de afiliação:
Brasil
País de publicação:
Reino Unido