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Topological van der Waals Contact for Two-Dimensional Semiconductors.
Ghods, Soheil; Lee, Hyunjin; Choi, Jun-Hui; Moon, Ji-Yun; Kim, Sein; Kim, Seung-Il; Kwun, Hyung Jun; Josline, Mukkath Joseph; Kim, Chan Young; Hyun, Sang Hwa; Kim, Sang Won; Son, Seok-Kyun; Lee, Taehun; Lee, Yoon Kyeung; Heo, Keun; Novoselov, Kostya S; Lee, Jae-Hyun.
Afiliación
  • Ghods S; Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea.
  • Lee H; School of Semiconductor and Chemical Engineering, Jeonbuk National University, Jeonju 54896, Korea.
  • Choi JH; School of Semiconductor and Chemical Engineering, Jeonbuk National University, Jeonju 54896, Korea.
  • Moon JY; Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea.
  • Kim S; Department of Mechanical Engineering and Materials Science and Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri 63130, United States.
  • Kim SI; Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea.
  • Kwun HJ; Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea.
  • Josline MJ; Department of Mechanical Engineering and Materials Science and Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri 63130, United States.
  • Kim CY; Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea.
  • Hyun SH; Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea.
  • Kim SW; Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea.
  • Son SK; Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea.
  • Lee T; 2D Device Laboratory, Samsung Advanced Institute of Technology, Suwon 16678, Korea.
  • Lee YK; Device Research Center, Samsung Advanced Institute of Technology, Suwon 16678, Korea.
  • Heo K; Department of Physics and Department of Information Display, Kyung Hee University, Seoul 02447, Korea.
  • Novoselov KS; Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575, Singapore.
  • Lee JH; School of Advanced Materials Engineering, Jeonbuk National University, Jeonju 54896, Korea.
ACS Nano ; 2024 Sep 12.
Article en En | MEDLINE | ID: mdl-39264283
ABSTRACT
The relentless miniaturization inherent in complementary metal-oxide semiconductor technology has created challenges at the interface of two-dimensional (2D) materials and metal electrodes. These challenges, predominantly stemming from metal-induced gap states (MIGS) and Schottky barrier heights (SBHs), critically impede device performance. This work introduces an innovative implementation of damage-free Sb2Te3 topological van der Waals (T-vdW) contacts, representing an ultimate contact electrode for 2D materials. We successfully fabricate p-type and n-type transistors using monolayer and multilayer WSe2, achieving ultralow SBH (∼24 meV) and contact resistance (∼0.71 kΩ·µm). Simulations highlight the role of topological surface states in Sb2Te3, which effectively mitigate the MIGS effect, thereby significantly elevating device efficiency. Our experimental insights revealed the semiohmic behavior of Sb2Te3 T-vdW contacts, with an exceptional photoresponsivity of 716 A/W and rapid response times of approximately 60 µs. The findings presented herein herald topological contacts as a superior alternative to traditional metal contacts, potentially revolutionizing the performance of miniaturized electronic and optoelectronic devices.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2024 Tipo del documento: Article Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2024 Tipo del documento: Article Pais de publicación: Estados Unidos