Your browser doesn't support javascript.
loading
Large-Area Growth of High-Optical-Quality MoSe2/hBN Heterostructures with Tunable Charge Carrier Concentration.
Ludwiczak, Katarzyna; Da Browska, Aleksandra Krystyna; Kucharek, Julia; Rogoza, Jakub; Tokarczyk, Mateusz; Bozek, Rafal; Gryglas-Borysiewicz, Marta; Taniguchi, Takashi; Watanabe, Kenji; Binder, Johannes; Pacuski, Wojciech; Wysmolek, Andrzej.
Afiliación
  • Ludwiczak K; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
  • Da Browska AK; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
  • Kucharek J; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
  • Rogoza J; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
  • Tokarczyk M; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
  • Bozek R; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
  • Gryglas-Borysiewicz M; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
  • Taniguchi T; Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Watanabe K; Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Binder J; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
  • Pacuski W; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
  • Wysmolek A; Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland.
ACS Appl Mater Interfaces ; 16(37): 49701-49710, 2024 Sep 18.
Article en En | MEDLINE | ID: mdl-39239734
ABSTRACT
Van der Waals heterostructures open up vast possibilities for applications in optoelectronics, especially since it was recognized that the optical properties of transition-metal dichalcogenides (TMDC) can be enhanced by adjacent hBN layers. However, although many micrometer-sized structures have been fabricated, the bottleneck for applications remains the lack of large-area structures with electrically tunable photoluminescence emission. In this study, we demonstrate the electrical charge carrier tuning for large-area epitaxial MoSe2 grown directly on epitaxial hBN. The structure is produced in a multistep procedure involving Metalorganic Vapor Phase Epitaxy (MOVPE) growth of large-area hBN, a wet transfer of hBN onto a SiO2/Si substrate, and the subsequent Molecular Beam Epitaxy (MBE) growth of monolayer MoSe2. The electrically induced change of the carrier concentration is deduced from the evolution of well-resolved charged and neutral exciton intensities. Our findings show that it is feasible to grow large-area, electrically addressable, high-optical-quality van der Waals heterostructures.
Palabras clave
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article País de afiliación: Polonia Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article País de afiliación: Polonia Pais de publicación: Estados Unidos