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Conductive single-phase SrMoO3 epitaxial films synthesized in pure Ar ambience via plasma-assisted radio frequency sputtering.
Roy-Chowdhury, Mouli; He, Cong; Tang, Ke; Koizumi, Hiroki; Wen, Zhenchao; Thota, Subhash; Sukegawa, Hiroaki; Ohkubo, Tadakatsu; Mitani, Seiji.
Afiliación
  • Roy-Chowdhury M; Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Tsukuba, Japan.
  • He C; Department of Physics, Indian Institute of Technology Guwahati, Guwahati, India.
  • Tang K; Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Tsukuba, Japan.
  • Koizumi H; Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Tsukuba, Japan.
  • Wen Z; Graduate School of Science and Technology, University of Tsukuba, Tsukuba, Japan.
  • Thota S; Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Tsukuba, Japan.
  • Sukegawa H; Center for Science and Innovation in Spintronics (CSIS), Tohoku University, Sendai, Japan.
  • Ohkubo T; Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Tsukuba, Japan.
  • Mitani S; Department of Physics, Indian Institute of Technology Guwahati, Guwahati, India.
Sci Technol Adv Mater ; 25(1): 2378684, 2024.
Article en En | MEDLINE | ID: mdl-39135761
ABSTRACT
The cubic perovskite SrMoO3 with a paramagnetic ground state and remarkably low room-temperature resistivity has been considered as a suitable candidate for the new-era oxide-based technology. However, the difficulty of preparing single-phase SrMoO3 thin films by hydrogen-free sputtering has hindered their practical use, especially due to the formation of thermodynamically favorable SrMoO4 impurity. In this work, we developed a radio frequency sputtering technology enabling the reduction reaction and achieved conductive epitaxial SrMoO3 films with pure phase from a SrMoO4 target in a hydrogen-free, pure argon environment. We demonstrated the significance of controlling the target-to-substrate distance (TSD) on the synthesis of SrMoO3; the film resistivity drastically changes from 1.46 × 105 µΩ·cm to 250 µΩ·cm by adjusting the TSD. Cross-sectional microstructural analyses demonstrated that films with the lowest resistivity, deposited for TSD = 2.5 cm, possess a single-phase SrMoO3 with an epitaxial perovskite structure. The formation mechanism of the conductive single-phase SrMoO3 films can be attributed to the plasma-assisted growth process by tuning the TSD. Temperature-dependent resistivity and Hall effect studies revealed metal-like conducting properties for low-resistive SrMoO3 films, while the high-resistive ones displayed semiconductor-like behavior. Our approach makes hydrogen-free, reliable and cost-efficient scalable deposition of SrMoO3 films possible, which may open up promising prospects for a wide range of future applications of oxide materials.
For the first time, we developed a plasma-assisted RF sputtering technology enabling the reduction reaction for the synthesis of single-phase conductive SrMoO3 epitaxial films from insulating SrMoO4 in pure-argon atmosphere.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Technol Adv Mater Año: 2024 Tipo del documento: Article País de afiliación: Japón Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
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XML
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Technol Adv Mater Año: 2024 Tipo del documento: Article País de afiliación: Japón Pais de publicación: Estados Unidos