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Surface engineering of high-k polymeric dielectric layers with a fluorinated organic crosslinker for use in flexible-platform electronics.
Ye, Heqing; Kwon, Hyeok-Jin; Ryu, Ka Yeon; Wu, Kaibin; Park, Jeongwan; Babita, Giri; Kim, Inae; Yang, Chanwoo; Kong, Hoyoul; Kim, Se Hyun.
Afiliación
  • Ye H; School of Flexible Electronics (SoFE), Henan Institute of Flexible Electronics (HIFE), Henan University 379 Mingli Road Zhengzhou 450046 China.
  • Kwon HJ; School of Chemical Engineering, Konkuk University Seoul 05029 Korea.
  • Ryu KY; Department of Industrial Chemistry, Pukyong National University Busan 48513 Republic of Korea.
  • Wu K; Department of Chemistry, Research Institute of Nature Science, Gyeongsang National University Jinju 52828 Republic of Korea hoyoulkong@gnu.ac.kr.
  • Park J; School of Chemical Engineering, Konkuk University Seoul 05029 Korea.
  • Babita G; Department of Chemistry, Research Institute of Nature Science, Gyeongsang National University Jinju 52828 Republic of Korea hoyoulkong@gnu.ac.kr.
  • Kim I; Department of Chemistry, Research Institute of Nature Science, Gyeongsang National University Jinju 52828 Republic of Korea hoyoulkong@gnu.ac.kr.
  • Yang C; Advanced Nano-Surface & Wearable Electronics Research Laboratory, Heat and Surface Technology R&D Department, Korea Institute of Industrial Technology Incheon 21999 Korea chanu@kitech.re.kr.
  • Kong H; Advanced Nano-Surface & Wearable Electronics Research Laboratory, Heat and Surface Technology R&D Department, Korea Institute of Industrial Technology Incheon 21999 Korea chanu@kitech.re.kr.
  • Kim SH; Department of Chemistry, Research Institute of Nature Science, Gyeongsang National University Jinju 52828 Republic of Korea hoyoulkong@gnu.ac.kr.
Nanoscale Adv ; 6(16): 4119-4127, 2024 Aug 06.
Article en En | MEDLINE | ID: mdl-39114159
ABSTRACT
High-k polymeric layers were prepared by combining various functional groups and were applied as gate dielectrics for practical organic field-effect transistors (OFETs). Crosslinking of the polymeric layers through UV-assisted organic azide fluorine-based crosslinkers induced dramatic improvements in the electrical performance of the OFET, such as field-effect mobility and bias-stress stability. Our synthesis and manufacturing method can be a useful technique for ensuring device operation stability and electrical property enhancement. With this analysis, we further applied our polymer-dielectric OFETs to flexible-platform-based electronic components, including unit OFETs and simple logic devices (NOT, NAND, and NOR gates). The outcomes of this research and development suggest a suitable method for the low-cost mass production of large-area flexible and printable devices, using a printing-based approach to replace current processes.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Adv Año: 2024 Tipo del documento: Article Pais de publicación: Reino Unido
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Adv Año: 2024 Tipo del documento: Article Pais de publicación: Reino Unido