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Room-Temperature Near-Infrared Lasing from GaAs/AlGaAs Core-Shell Nanowires Based on Random Cavity.
Meng, Bingheng; Kang, Yubin; Zhang, Xuanyu; Yu, Xuanchi; Wang, Shan; Wang, Puning; Tang, Jilong; Hao, Qun; Wei, Zhipeng; Chen, Rui.
Afiliación
  • Meng B; State Key Laboratory of High Power Semiconductor Laser, School of Physics, Changchun University of Science and Technology, Changchun, Jilin 130022, P. R. China.
  • Kang Y; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, P. R. China.
  • Zhang X; State Key Laboratory of High Power Semiconductor Laser, School of Physics, Changchun University of Science and Technology, Changchun, Jilin 130022, P. R. China.
  • Yu X; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, P. R. China.
  • Wang S; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, P. R. China.
  • Wang P; State Key Laboratory of High Power Semiconductor Laser, School of Physics, Changchun University of Science and Technology, Changchun, Jilin 130022, P. R. China.
  • Tang J; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, P. R. China.
  • Hao Q; State Key Laboratory of High Power Semiconductor Laser, School of Physics, Changchun University of Science and Technology, Changchun, Jilin 130022, P. R. China.
  • Wei Z; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, P. R. China.
  • Chen R; State Key Laboratory of High Power Semiconductor Laser, School of Physics, Changchun University of Science and Technology, Changchun, Jilin 130022, P. R. China.
ACS Appl Mater Interfaces ; 16(31): 41677-41683, 2024 Aug 07.
Article en En | MEDLINE | ID: mdl-39069675
ABSTRACT
Room-temperature lasing based on low-dimensional GaAs nanowires (NWs) is one of the most critical and challenging issues in realizing near-infrared lasers for nanophotonics. In this article, the random lasing characteristics based on GaAs NW arrays have been discussed theoretically. According to the simulation, GaAs/AlGaAs core-shell NWs with an optimal diameter, density, and Al content in the shell have been grown. Systematic morphological and optical characterizations were carried out. It is found that the GaAs NWs with the additional growth of the AlGaAs shell exhibit improved emission by about 2 orders of magnitude at low temperatures, which can be attributed to the suppression of crystal defects. At room temperature, lasing was observed with a threshold around 70.16 mW/cm2, and the random lasing mechanism was discussed in detail. This work is of great significance for the design of random cavities based on semiconductor NWs, which is important for optoelectronic integration.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article Pais de publicación: Estados Unidos
Texto completo
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XML
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article Pais de publicación: Estados Unidos