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Plasticity in single-crystalline Mg3Bi2 thermoelectric material.
Zhao, Peng; Xue, Wenhua; Zhang, Yue; Zhi, Shizhen; Ma, Xiaojing; Qiu, Jiamin; Zhang, Tianyu; Ye, Sheng; Mu, Huimin; Cheng, Jinxuan; Wang, Xiaodong; Hou, Shuaihang; Zhao, Lijia; Xie, Guoqiang; Cao, Feng; Liu, Xingjun; Mao, Jun; Fu, Yuhao; Wang, Yumei; Zhang, Qian.
Afiliación
  • Zhao P; School of Materials Science and Engineering, and Institute of Materials Genome and Big Data, Harbin Institute of Technology (Shenzhen), Shenzhen, People's Republic of China.
  • Xue W; School of Materials Science and Engineering, and Institute of Materials Genome and Big Data, Harbin Institute of Technology (Shenzhen), Shenzhen, People's Republic of China.
  • Zhang Y; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China.
  • Zhi S; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China.
  • Ma X; School of Materials Science and Engineering, and Institute of Materials Genome and Big Data, Harbin Institute of Technology (Shenzhen), Shenzhen, People's Republic of China.
  • Qiu J; School of Materials Science and Engineering, and Institute of Materials Genome and Big Data, Harbin Institute of Technology (Shenzhen), Shenzhen, People's Republic of China.
  • Zhang T; School of Materials Science and Engineering, and Institute of Materials Genome and Big Data, Harbin Institute of Technology (Shenzhen), Shenzhen, People's Republic of China.
  • Ye S; School of Materials Science and Engineering, and Institute of Materials Genome and Big Data, Harbin Institute of Technology (Shenzhen), Shenzhen, People's Republic of China.
  • Mu H; School of Materials Science and Engineering, and Institute of Materials Genome and Big Data, Harbin Institute of Technology (Shenzhen), Shenzhen, People's Republic of China.
  • Cheng J; State Key Laboratory of Superhard Materials, Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun, People's Republic of China.
  • Wang X; School of Materials Science and Engineering, and Institute of Materials Genome and Big Data, Harbin Institute of Technology (Shenzhen), Shenzhen, People's Republic of China.
  • Hou S; School of Materials Science and Engineering, and Institute of Materials Genome and Big Data, Harbin Institute of Technology (Shenzhen), Shenzhen, People's Republic of China.
  • Zhao L; Institute of Special Environments Physical Sciences, Harbin Institute of Technology (Shenzhen), Shenzhen, People's Republic of China.
  • Xie G; School of Materials Science and Engineering, and Institute of Materials Genome and Big Data, Harbin Institute of Technology (Shenzhen), Shenzhen, People's Republic of China.
  • Cao F; Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang, People's Republic of China.
  • Liu X; School of Materials Science and Engineering, and Institute of Materials Genome and Big Data, Harbin Institute of Technology (Shenzhen), Shenzhen, People's Republic of China.
  • Mao J; State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, People's Republic of China.
  • Fu Y; School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen, People's Republic of China.
  • Wang Y; School of Materials Science and Engineering, and Institute of Materials Genome and Big Data, Harbin Institute of Technology (Shenzhen), Shenzhen, People's Republic of China.
  • Zhang Q; State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, People's Republic of China.
Nature ; 631(8022): 777-782, 2024 Jul.
Article en En | MEDLINE | ID: mdl-38987600
ABSTRACT
Most of the state-of-the-art thermoelectric materials are inorganic semiconductors. Owing to the directional covalent bonding, they usually show limited plasticity at room temperature1,2, for example, with a tensile strain of less than five per cent. Here we discover that single-crystalline Mg3Bi2 shows a room-temperature tensile strain of up to 100 per cent when the tension is applied along the (0001) plane (that is, the ab plane). Such a value is at least one order of magnitude higher than that of traditional thermoelectric materials and outperforms many metals that crystallize in a similar structure. Experimentally, slip bands and dislocations are identified in the deformed Mg3Bi2, indicating the gliding of dislocations as the microscopic mechanism of plastic deformation. Analysis of chemical bonding reveals multiple planes with low slipping barrier energy, suggesting the existence of several slip systems in Mg3Bi2. In addition, continuous dynamic bonding during the slipping process prevents the cleavage of the atomic plane, thus sustaining a large plastic deformation. Importantly, the tellurium-doped single-crystalline Mg3Bi2 shows a power factor of about 55 microwatts per centimetre per kelvin squared and a figure of merit of about 0.65 at room temperature along the ab plane, which outperforms the existing ductile thermoelectric materials3,4.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nature Año: 2024 Tipo del documento: Article Pais de publicación: Reino Unido
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nature Año: 2024 Tipo del documento: Article Pais de publicación: Reino Unido