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Atomic Layer Growth of Rutile TiO2 Films with Ultrahigh Dielectric Constants via Crystal Orientation Engineering.
Kim, Taikyu; Jeon, Jihoon; Ryu, Seung Ho; Chung, Hong Keun; Jang, Myoungsu; Lee, Seunghyeok; Chung, Yoon Jang; Kim, Seong Keun.
Afiliación
  • Kim T; Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02797, South Korea.
  • Jeon J; Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02797, South Korea.
  • Ryu SH; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, South Korea.
  • Chung HK; Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02797, South Korea.
  • Jang M; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, South Korea.
  • Lee S; Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02797, South Korea.
  • Chung YJ; Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, South Korea.
  • Kim SK; Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02797, South Korea.
ACS Appl Mater Interfaces ; 16(26): 33877-33884, 2024 Jul 03.
Article en En | MEDLINE | ID: mdl-38961576
ABSTRACT
In general, the electronic and optical properties of oxide films can significantly benefit from highly textured crystallinity. However, oxide films grown by atomic layer deposition (ALD), a powerful technique for the synthesis of high-quality, nanoscale thin films, usually exhibit amorphous or randomly oriented polycrystalline phases. Here, we demonstrate the growth of highly textured rutile phase ALD TiO2 films through rational substrate design. Both a- and c-axis preferentially oriented TiO2 films are obtained by varying the lattice parameters of the initial ALD growth surface. Under optimized conditions, we find that it is possible to deposit high-quality, c-axis preferentially aligned TiO2 films with a bulk dielectric constant approaching 185, rivaling the single crystal limit. These films display a remarkably high dielectric constant of 117 despite thin thickness of 5.2 nm. Moreover, the addition of a single doping sequence of Al2O3 successfully suppresses leakage currents to levels compatible with modern dynamic random access memory cells, all the while maintaining the high bulk dielectric constant of 137. These results clearly highlight the prospect of utilizing crystal orientation engineering in ALD thin films for emerging semiconductor devices.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article País de afiliación: Corea del Sur Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article País de afiliación: Corea del Sur Pais de publicación: Estados Unidos