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Interfacial Distortion of Sb2Te3-Sb2Se3 Multilayers via Atomic Layer Deposition for Enhanced Thermoelectric Properties.
Yang, Jun; Daqiqshirazi, Mohammadreza; Ritschel, Tobias; Bahrami, Amin; Lehmann, Sebastian; Wolf, Daniel; Feng, Wen; Pöhl, Almut; Charvot, Jaroslav; Bures, Filip; Brumme, Thomas; Lubk, Axel; Geck, Jochen; Nielsch, Kornelius.
Afiliación
  • Yang J; Leibniz Institute for Solid State and Materials Research, Dresden 01069, Germany.
  • Daqiqshirazi M; Institute of Materials Science, Technische Universität Dresden, Dresden 01062, Germany.
  • Ritschel T; Chair of Theoretical Chemistry, Technische Universität Dresden, Dresden 01069, Germany.
  • Bahrami A; Institute of Solid State and Materials Physics, Technische Universität Dresden, Dresden 01069, Germany.
  • Lehmann S; Leibniz Institute for Solid State and Materials Research, Dresden 01069, Germany.
  • Wolf D; Leibniz Institute for Solid State and Materials Research, Dresden 01069, Germany.
  • Feng W; Leibniz Institute for Solid State and Materials Research, Dresden 01069, Germany.
  • Pöhl A; Leibniz Institute for Solid State and Materials Research, Dresden 01069, Germany.
  • Charvot J; Leibniz Institute for Solid State and Materials Research, Dresden 01069, Germany.
  • Bures F; Institute of Organic Chemistry and Technology, Faculty of Chemical Technology, University of Pardubice, Pardubice 53210, Czech Republic.
  • Brumme T; Institute of Organic Chemistry and Technology, Faculty of Chemical Technology, University of Pardubice, Pardubice 53210, Czech Republic.
  • Lubk A; Chair of Theoretical Chemistry, Technische Universität Dresden, Dresden 01069, Germany.
  • Geck J; Leibniz Institute for Solid State and Materials Research, Dresden 01069, Germany.
  • Nielsch K; Institute of Solid State and Materials Physics, Technische Universität Dresden, Dresden 01069, Germany.
ACS Nano ; 18(27): 17500-17508, 2024 Jul 09.
Article en En | MEDLINE | ID: mdl-38919047
ABSTRACT
Atomic layer deposition (ALD) is an effective technique for depositing thin films with precise control of layer thickness and functional properties. In this work, Sb2Te3-Sb2Se3 nanostructures were synthesized using thermal ALD. A decrease in the Sb2Te3 layer thickness led to the emergence of distinct peaks from the Laue rings, indicative of a highly textured film structure with optimized crystallinity. Density functional theory simulations revealed that carrier redistribution occurs at the interface to establish charge equilibrium. By carefully optimizing the layer thicknesses, we achieved an obvious enhancement in the Seebeck coefficient, reaching a peak figure of merit (zT) value of 0.38 at room temperature. These investigations not only provide strong evidence for the potential of ALD manipulation to improve the electrical performance of metal chalcogenides but also offer valuable insights into achieving high performance in two-dimensional materials.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2024 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Estados Unidos
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2024 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Estados Unidos