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Two-Dimensional Ultrathin Fe3Sn2 Kagome Metal with Defect-Dependent Magnetic Property.
Zhu, Manli; Li, Qiuqiu; Guo, Kaiwen; Chen, Bailian; He, Kun; Yi, Chen; Lu, Ping; Li, Xingyun; Lu, Jiwu; Li, Jia; Wu, Ruixia; Liu, Xingqiang; Liu, Yuan; Liao, Lei; Li, Bo; Duan, Xidong.
Afiliación
  • Zhu M; Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Rese
  • Li Q; Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China.
  • Guo K; Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Rese
  • Chen B; Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Rese
  • He K; School of Design, Hunan University, Changsha 410082, People's Republic of China.
  • Yi C; Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Rese
  • Lu P; Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Rese
  • Li X; Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China.
  • Lu J; DongGuan Institute of GuangDong Institute of Metrology, Dongguan 523343, People's Republic of China.
  • Li J; School of Design, Hunan University, Changsha 410082, People's Republic of China.
  • Wu R; Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China.
  • Liu X; Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China.
  • Liu Y; Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Rese
  • Liao L; Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Rese
  • Li B; Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Rese
  • Duan X; Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Rese
Nano Lett ; 2024 Jun 06.
Article en En | MEDLINE | ID: mdl-38842926
ABSTRACT
Two-dimensional (2D) Fe3Sn2, which is a room-temperature ferromagnetic kagome metal, has potential applications in spintronic devices. However, the systematic synthesis and magnetic study of 2D Fe3Sn2 single crystals have rarely been reported. Here we have synthesized 2D hexagonal and triangular Fe3Sn2 nanosheets by controlling the amount of FeCl2 precursors in the chemical vapor deposition (CVD) method. It is found that the hexagonal Fe3Sn2 nanosheets exist with Fe vacancy defects and show no obvious coercivity. While the triangular Fe3Sn2 nanosheet has obvious hysteresis loops at room temperature, its coercivity first increases and then remains stable with an increase in temperature, which should result from the competition of the thermal activation mechanism and spin direction rotation mechanism. A first-principles calculation study shows that the Fe vacancy defects in Fe3Sn2 can increase the distances between Fe atoms and weaken the ferromagnetism of Fe3Sn2. The resulting 2D Fe3Sn2 nanosheets provide a new choice for spintronic devices.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
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XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article Pais de publicación: Estados Unidos