Your browser doesn't support javascript.
loading
Electroluminescent vertical tunneling junctions based on WSe2 monolayer quantum emitter arrays: Exploring tunability with electric and magnetic fields.
Howarth, James; Vaklinova, Kristina; Grzeszczyk, Magdalena; Baldi, Giulio; Hague, Lee; Potemski, Marek; Novoselov, Kostya S; Kozikov, Aleksey; Koperski, Maciej.
Afiliación
  • Howarth J; School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom.
  • Vaklinova K; Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore.
  • Grzeszczyk M; Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore.
  • Baldi G; Department of Physics, National University of Singapore, Singapore 119077, Singapore.
  • Hague L; School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom.
  • Potemski M; Laboratoire National des Champs Magnétiques Intenses, CNRS-Université Grenoble Alpes-Université Paul Sabatier-Institut National des Sciences Appliquées Toulouse, Grenoble 38042, France.
  • Novoselov KS; Center for Terahertz Research and Applications Labs, Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw 01-142, Poland.
  • Kozikov A; Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore.
  • Koperski M; Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore.
Proc Natl Acad Sci U S A ; 121(23): e2401757121, 2024 Jun 04.
Article en En | MEDLINE | ID: mdl-38820004
ABSTRACT
We experimentally demonstrate the creation of defects in monolayer WSe2 via nanopillar imprinting and helium ion irradiation. Based on the first method, we realize atomically thin vertical tunneling light-emitting diodes based on WSe2 monolayers hosting quantum emitters at deterministically specified locations. We characterize these emitters by investigating the evolution of their emission spectra in external electric and magnetic fields, as well as by inducing electroluminescence at low temperatures. We identify qualitatively different types of quantum emitters and classify them according to the dominant electron-hole recombination paths, determined by the mechanisms of intervalley mixing occurring in fundamental conduction and/or valence subbands.
Palabras clave
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Proc Natl Acad Sci U S A Año: 2024 Tipo del documento: Article País de afiliación: Reino Unido Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Proc Natl Acad Sci U S A Año: 2024 Tipo del documento: Article País de afiliación: Reino Unido Pais de publicación: Estados Unidos