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Effect of High-Temperature Storage on Electrical Characteristics of Hydrogen-Treated AlGaN/GaN High-Electron-Mobility Transistors.
Zhou, Bin; Liu, Chang; Guo, Chenrun; Hu, Xianghong; Jian, Xiaodong; Wang, Hongyue; Yang, Xiaofeng.
Afiliación
  • Zhou B; The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou 511370, China.
  • Liu C; The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou 511370, China.
  • Guo C; The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou 511370, China.
  • Hu X; The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou 511370, China.
  • Jian X; National and Local Joint Engineering Research Center of Reliability Analysis and Testing Technology of Electronic Information Products, Guangzhou 511370, China.
  • Wang H; The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou 511370, China.
  • Yang X; The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou 511370, China.
Micromachines (Basel) ; 15(5)2024 Apr 30.
Article en En | MEDLINE | ID: mdl-38793184
ABSTRACT
In this paper, high-temperature storage of hydrogen-treated AlGaN/GaN HEMTs is conducted for the first time to study the effect of high temperature on the electrical characteristics of the devices after hydrogen treatment, and it is found that high-temperature storage can effectively reduce the impact of hydrogen on the devices. After hydrogen treatment, the output current and the maximum transconductance of the device increase, and the threshold voltage drifts negatively. However, after high-temperature treatment at 200 °C for 24 h, the output current, threshold voltage, and the maximum transconductance of the device all approach their initial values before hydrogen treatment. By using low-frequency noise analysis technology, the trap density of the hydrogen-treated AlGaN/GaN HEMT is determined to be 8.9 × 1023 cm-3·eV-1, while it changes to 4.46 × 1022 cm-3·eV-1 after high-temperature storage. We believe that the change in the electrical characteristics of the device in hydrogen is due to the passivation of hydrogen on the inherent trap of the device, and the variation in the electrical properties of the device in the process of high-temperature storage involves the influence of two effects, namely the dehydrogenation effect and the improvement of the metal-semiconductor interface caused by high temperatures.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2024 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2024 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza