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Enhancing the Uniformity of a Memristor Using a Bilayer Dielectric Structure.
Liu, Yulin; Chen, Qilai; Guo, Yanbo; Guo, Bingjie; Liu, Gang; Liu, Yanchao; He, Lei; Li, Yutong; He, Jingyan; Tang, Minghua.
Afiliación
  • Liu Y; School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China.
  • Chen Q; Department of Micro and Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200241, China.
  • Guo Y; Aerospace Science & Industry Shenzhen (Group) Co., Ltd., Shenzhen 518000, China.
  • Guo B; Department of Micro and Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200241, China.
  • Liu G; Department of Micro and Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200241, China.
  • Liu Y; Department of Micro and Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200241, China.
  • He L; Shi Changxu Class of the School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China.
  • Li Y; Shi Changxu Class of the School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China.
  • He J; Shi Changxu Class of the School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China.
  • Tang M; Shi Changxu Class of the School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China.
Micromachines (Basel) ; 15(5)2024 Apr 30.
Article en En | MEDLINE | ID: mdl-38793178
ABSTRACT
Resistive random access memory (RRAM) holds great promise for in-memory computing, which is considered the most promising strategy for solving the von Neumann bottleneck. However, there are still significant problems in its application due to the non-uniform performance of RRAM devices. In this work, a bilayer dielectric layer memristor was designed based on the difference in the Gibbs free energy of the oxide. We fabricated Au/Ta2O5/HfO2/Ta/Pt (S3) devices with excellent uniformity. Compared with Au/HfO2/Pt (S1) and Au/Ta2O5/Pt (S2) devices, the S3 device has a low reset voltage fluctuation of 2.44%, and the resistive coefficients of variation are 13.12% and 3.84% in HRS and LRS, respectively, over 200 cycles. Otherwise, the bilayer device has better linearity and more conductance states in multi-state regulation. At the same time, we analyze the physical mechanism of the bilayer device and provide a physical model of ion migration. This work provides a new idea for designing and fabricating resistive devices with stable performance.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2024 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2024 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza