Your browser doesn't support javascript.
loading
In situ formation of inhibitor species through catalytic surface reactions during area-selective atomic layer deposition of TaN.
Merkx, Marc J M; Tezsevin, Ilker; Yu, Pengmei; Janssen, Thijs; Heinemans, Rik H G M; Lengers, Rik J; Chen, Jiun-Ruey; Jezewski, Christopher J; Clendenning, Scott B; Kessels, Wilhelmus M M; Sandoval, Tania E; Mackus, Adriaan J M.
Afiliación
  • Merkx MJM; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.
  • Tezsevin I; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.
  • Yu P; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.
  • Janssen T; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.
  • Heinemans RHGM; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.
  • Lengers RJ; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.
  • Chen JR; Intel Corporation, Hillsboro, Oregon 97124, USA.
  • Jezewski CJ; Intel Corporation, Hillsboro, Oregon 97124, USA.
  • Clendenning SB; Intel Corporation, Hillsboro, Oregon 97124, USA.
  • Kessels WMM; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.
  • Sandoval TE; Department of Chemical and Environmental Engineering, Universidad Técnica Federico Santa María, Santiago 2340000, Chile.
  • Mackus AJM; Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.
J Chem Phys ; 160(20)2024 May 28.
Article en En | MEDLINE | ID: mdl-38775743
ABSTRACT
Small molecule inhibitors (SMIs) have been gaining attention in the field of area-selective atomic layer deposition (ALD) because they can be applied in the vapor-phase. A major challenge for SMIs is that vapor-phase application leads to a disordered inhibitor layer with lower coverage as compared to self-assembled monolayers, SAMs. A lower coverage of SMIs makes achieving high selectivity for area-selective ALD more challenging. To overcome this challenge, mechanistic understanding is required for the formation of SMI layers and the resulting precursor blocking. In this study, reflection adsorption infrared spectroscopy measurements are used to investigate the performance of aniline as an SMI. Our results show that aniline undergoes catalytic surface reactions, such as hydrogenolysis, on a Ru non-growth area at substrate temperatures above 250 °C. At these temperatures, a greatly improved selectivity is observed for area-selective TaN ALD using aniline as an inhibitor. The results suggest that catalytic surface reactions of the SMI play an important role in improving precursor blocking, likely through the formation of a more carbon-rich inhibitor layer. More prominently, catalytic surface reactions can provide a new strategy for forming inhibitor layers that are otherwise very challenging or impossible to form directly through vapor-phase application.
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Chem Phys Año: 2024 Tipo del documento: Article País de afiliación: Países Bajos Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Chem Phys Año: 2024 Tipo del documento: Article País de afiliación: Países Bajos Pais de publicación: Estados Unidos