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Flexural and acoustic phonon-drag thermopower and electron energy loss rate in silicene.
Ansari, Meenhaz; Ashraf, S S Z; Tripathi, P; Ahmad, A.
Afiliación
  • Ansari M; Interdisciplinary Nanotechnology Centre, Zakir Husain College of Engineering and Technology, Aligarh Muslim University, Aligarh 202002, Uttar Pradesh, India.
  • Ashraf SSZ; Department of Physics, Faculty of Science, Aligarh Muslim University, Aligarh 202002, Uttar Pradesh, India.
  • Tripathi P; Department of Applied Physics, Zakir Husain College of Engineering and Technology, Aligarh Muslim University, Aligarh 202002, Uttar Pradesh, India.
  • Ahmad A; Interdisciplinary Nanotechnology Centre, Zakir Husain College of Engineering and Technology, Aligarh Muslim University, Aligarh 202002, Uttar Pradesh, India.
J Phys Condens Matter ; 36(31)2024 May 08.
Article en En | MEDLINE | ID: mdl-38657621
ABSTRACT
We have performed a comprehensive numerical and analytical examination of two crucial transport aspects in silicene the phonon-drag thermopower,Sp, and the electron's energy loss rate,Fe. Specifically, our investigation is centered on their responses to out-of-plane flexural phonons and in-plane acoustic phonons in silicene, a two-dimensional allotrope of silicon as a function of electron temperature,T,and electron concentration,n,upto the room temperature. It is found that the calculated quantities have a non-monotonic dependence for the phonon modes for both parameters(T and n)considered while analytical results predict definite dependencies up to the complete low-temperature Bloch-Gruneisen (BG) regime. To provide a more comprehensive picture, we contrast the complete numerical outcomes with the approximated analytical BG results, revealing a convergence within a specific range of temperature and carrier concentration. In light of this convergence, we put forth suggestions to elucidate the underlying factors responsible for this behavior. A comparison based on the magnitude of the calculated quantities can be made from the figures between the two considered phonon modes, which clearly shows that the out-of-plane flexural phonons are effective throughout the considered temperature range. This observation leads us to posit that the dominating contribution of the out-of-plane flexural phonon modes hinges upon the deformation potential constant and phonon energy associated with the phonon mode. Our study carries significant implications for estimating the electrical and thermal properties of silicene and provides valuable insights for the development of devices based on silicene-based technologies.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Phys Condens Matter Asunto de la revista: BIOFISICA Año: 2024 Tipo del documento: Article País de afiliación: India Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Phys Condens Matter Asunto de la revista: BIOFISICA Año: 2024 Tipo del documento: Article País de afiliación: India Pais de publicación: Reino Unido