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Wafer Scale Gallium Nitride Integrated Electrode Toward Robust High Temperature Energy Storage.
Lv, Songyang; Wang, Shouzhi; Yu, Jiaoxian; Tian, Ge; Wang, Guodong; An, Pengfei; Song, Kepeng; Ma, Bo; Li, Yangyang; Xu, Xiangang; Zhang, Lei.
Afiliación
  • Lv S; Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
  • Wang S; Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
  • Yu J; Suzhou Research Institute, Shandong University, Suzhou, 215123, P. R. China.
  • Tian G; Key Laboratory of Processing and Testing Technology of Glass & Functional Ceramics of Shandong Province, School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250353, P. R. China.
  • Wang G; School of Life Sciences, Shandong First Medical University & Shandong Academy of Medical Sciences, Taian, Shandong, 271000, P. R. China.
  • An P; Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
  • Song K; Division of Nuclear Technology and Applications, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, P. R. China.
  • Ma B; Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
  • Li Y; Division of Nuclear Technology and Applications, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, P. R. China.
  • Xu X; Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
  • Zhang L; Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
Small ; 20(27): e2310837, 2024 Jul.
Article en En | MEDLINE | ID: mdl-38644345
ABSTRACT
Gallium Nitride (GaN), as the representative of wide bandgap semiconductors, has great prospects in accomplishing rapid charge delivery under high-temperature environments thanks to excellent structural stability and electron mobility. However, there is still a gap in wafer-scale GaN single-crystal integrated electrodes applied in the energy storage field. Herein, Si-doped GaN nanochannel with gallium oxynitride (GaON) layer on a centimeter scale (denoted by GaN NC) is reported. The Si atoms modulate electronic redistribution to improve conductivity and drive nanochannel formation. Apart from that, the distinctive nanochannel configuration with a GaON layer provides adequate active sites and extraordinary structural stability. The GaN-based supercapacitors are assembled and deliver outstanding charge storage capabilities at 140 °C. Surprisingly, 90% retention is maintained after 50 000 cycles. This study opens the pathway toward wafer-scale GaN single-crystal integrated electrodes with self-powered characteristics that are compatible with various (opto)-electronic devices.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article Pais de publicación: Alemania
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article Pais de publicación: Alemania