Publisher Correction: Deep-potential enabled multiscale simulation of gallium nitride devices on boron arsenide cooling substrates.

Wu, Jing; Zhou, E; Huang, An; Zhang, Hongbin; Hu, Ming; Qin, Guangzhao

Wu, Jing; Zhou, E; Huang, An; Zhang, Hongbin; Hu, Ming; Qin, Guangzhao.

Afiliación

Wu J; State Key Laboratory of Advanced Design and Manufacturing Technology for Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha, 410082, P. R. China.
Zhou E; School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan, 430074, Hubei, China.
Huang A; State Key Laboratory of Advanced Design and Manufacturing Technology for Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha, 410082, P. R. China.
Zhang H; State Key Laboratory of Advanced Design and Manufacturing Technology for Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha, 410082, P. R. China.
Hu M; Institut für Materialwissenschaft, Technische Universität Darmstadt, Darmstadt, 64289, Germany.
Qin G; Department of Mechanical Engineering, University of South Carolina, Columbia, SC, 29208, USA.

Nat Commun ; 15(1): 3272, 2024 Apr 16.

Article en En | MEDLINE | ID: mdl-38627417

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2024 Tipo del documento: Article Pais de publicación: Reino Unido

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