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Phase-Centric MOCVD Enabled Synthetic Approaches for Wafer-Scale 2D Tin Selenides.
Kim, Sungyeon; Lee, Wookhee; Ko, Kyungmin; Cho, Hanbin; Cho, Hoyeon; Jeon, Seonhwa; Jeong, Changwook; Kim, Sungkyu; Ding, Feng; Suh, Joonki.
Afiliación
  • Kim S; Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea.
  • Lee W; Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea.
  • Ko K; Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea.
  • Cho H; Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea.
  • Cho H; Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea.
  • Jeon S; Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea.
  • Jeong C; Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea.
  • Kim S; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, South Korea.
  • Ding F; Shenzhen Institute of Advanced Technology, Chinese Academy of Science, Shenzhen, 518055, China.
  • Suh J; Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea.
Adv Mater ; 36(28): e2400800, 2024 Jul.
Article en En | MEDLINE | ID: mdl-38593471
ABSTRACT
Following an initial nucleation stage at the flake level, atomically thin film growth of a van der Waals material is promoted by ultrafast lateral growth and prohibited vertical growth. To produce these highly anisotropic films, synthetic or post-synthetic modifications are required, or even a combination of both, to ensure large-area, pure-phase, and low-temperature deposition. A set of synthetic strategies is hereby presented to selectively produce wafer-scale tin selenides, SnSex (both x = 1 and 2), in the 2D forms. The 2D-SnSe2 films with tuneable thicknesses are directly grown via metal-organic chemical vapor deposition (MOCVD) at 200 °C, and they exhibit outstanding crystallinities and phase homogeneities and consistent film thickness across the entire wafer. This is enabled by excellent control of the volatile metal-organic precursors and decoupled dual-temperature regimes for high-temperature ligand cracking and low-temperature growth. In contrast, SnSe, which intrinsically inhibited from 2D growth, is indirectly prepared by a thermally driven phase transition of an as-grown 2D-SnSe2 film with all the benefits of the MOCVD technique. It is accompanied by the electronic n-type to p-type crossover at the wafer scale. These tailor-made synthetic routes will accelerate the low-thermal-budget production of multiphase 2D materials in a reliable and scalable fashion.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2024 Tipo del documento: Article País de afiliación: Corea del Sur Pais de publicación: Alemania
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2024 Tipo del documento: Article País de afiliación: Corea del Sur Pais de publicación: Alemania