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Electrically Triggered Domain Wall Movement in Cu2Se Semiconductor.
Dong, Ruifeng; Wang, Zhengzhou; Bai, Hui; Xie, Chenghao; Tan, Gangjian; Zhang, Qingjie; Wu, Jinsong.
Afiliación
  • Dong R; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.
  • Wang Z; Nanostructure Research Center, Wuhan University of Technology, Wuhan 430070, China.
  • Bai H; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.
  • Xie C; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.
  • Tan G; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.
  • Zhang Q; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.
  • Wu J; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.
ACS Appl Mater Interfaces ; 16(12): 15525-15532, 2024 Mar 27.
Article en En | MEDLINE | ID: mdl-38482605
ABSTRACT
The ion-conductive α-Cu2Se is found to possess antipolar dipoles, and the movement of the domain boundary under the applied voltage causes change of resistance, showing promising application in memristors. However, due to the complex ordering of Cu ions in the α-Cu2Se, there are multiple types of domain wall structure. Here, we show that two typical domain walls in α-Cu2Se can be formed, by controlling the voltage during phase transition from high-temperature cubic ß-Cu2Se to α-Cu2Se. We also show by in situ transmission electron microscopy that the formed [01̅0]/[101̅] domain wall performs a reversible movement under the applied external voltage, while the [010]/[01̅0] domain wall does not move. We further demonstrate that pinning of the [010]/[01̅0] domain wall could be due to the formed dislocations in the interface. This study shows that applying preprocess conditions is important to obtain the designed microstructure and resistive properties of α-Cu2Se.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2024 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos