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Bioinspired carbon nanotube-based nanofluidic ionic transistor with ultrahigh switching capabilities for logic circuits.
Liu, Wenchao; Mei, Tingting; Cao, Zhouwen; Li, Chun; Wu, Yitian; Wang, Li; Xu, Guoheng; Chen, Yuanxia; Zhou, You; Wang, Senyao; Xue, Yahui; Yu, Yanhao; Kong, Xiang-Yu; Chen, Ruotian; Tu, Bin; Xiao, Kai.
Afiliación
  • Liu W; Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Southern University of Science and Technology, Shenzhen 518055, P.R. China.
  • Mei T; Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Southern University of Science and Technology, Shenzhen 518055, P.R. China.
  • Cao Z; Laboratory of Theoretical and Computational Nanoscience, CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P.R. China.
  • Li C; University of Chinese Academy of Sciences, Beijing 100049, P.R. China.
  • Wu Y; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P.R. China.
  • Wang L; Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Southern University of Science and Technology, Shenzhen 518055, P.R. China.
  • Xu G; Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Southern University of Science and Technology, Shenzhen 518055, P.R. China.
  • Chen Y; Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Southern University of Science and Technology, Shenzhen 518055, P.R. China.
  • Zhou Y; Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Southern University of Science and Technology, Shenzhen 518055, P.R. China.
  • Wang S; Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Southern University of Science and Technology, Shenzhen 518055, P.R. China.
  • Xue Y; Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Southern University of Science and Technology, Shenzhen 518055, P.R. China.
  • Yu Y; Department of Mechanics and Aerospace Engineering, Southern University of Science and Technology, Shenzhen 518055, P.R. China.
  • Kong XY; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P.R. China.
  • Chen R; CAS Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China.
  • Tu B; State Key Laboratory of Catalysis, 2011-iChEM, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Zhongshan Road 457, Dalian 116023, P.R. China.
  • Xiao K; Laboratory of Theoretical and Computational Nanoscience, CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P.R. China.
Sci Adv ; 10(11): eadj7867, 2024 Mar 15.
Article en En | MEDLINE | ID: mdl-38478611
ABSTRACT
The voltage-gated ion channels, also known as ionic transistors, play substantial roles in biological systems and ion-ion selective separation. However, implementing the ultrafast switchable capabilities and polarity switching of ionic transistors remains a challenge. Here, we report a nanofluidic ionic transistor based on carbon nanotubes, which exhibits an on/off ratio of 104 at operational gate voltage as low as 1 V. By controlling the morphology of carbon nanotubes, both unipolar and ambipolar ionic transistors are realized, and their on/off ratio can be further improved by introducing an Al2O3 dielectric layer. Meanwhile, this ionic transistor enables the polarity switching between p-type and n-type by controlled surface properties of carbon nanotubes. The implementation of constructing ionic circuits based on ionic transistors is demonstrated, which enables the creation of NOT, NAND, and NOR logic gates. The ionic transistors are expected to have profound implications for low-energy consumption computing devices and brain-machine interfacing.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Adv Año: 2024 Tipo del documento: Article Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Adv Año: 2024 Tipo del documento: Article Pais de publicación: Estados Unidos