Quantification of UV Light-Induced Spectral Response Degradation of CMOS-Based Photodetectors.
Sensors (Basel)
; 24(5)2024 Feb 27.
Article
en En
| MEDLINE
| ID: mdl-38475071
ABSTRACT
High-energy radiation is known to potentially impact the optical performance of silicon-based sensors adversely. Nevertheless, a proper characterization and quantification of possible spectral response degradation effects due to UV stress is technically challenging. On one hand, typical illumination methods via UV lamps provide a poorly defined energy spectrum. On the other hand, a standardized measurement methodology is also missing. This work provides an approach where well-defined energy spectrum UV stress conditions are guaranteed via a customized optical set up, including a laser driven light source, a monochromator, and a non-solarizing optical fiber. The test methodology proposed here allows performing a controlled UV stress between 200 nm and 400 nm with well-defined energy conditions and offers a quantitative overview of the impact on the optical performance in CMOS-based photodiodes, along a wavelength range from 200 to 1100 nm and 1 nm step. This is of great importance for the characterization and development of new sensors with a high and stable UV spectral response, as well as for implementation of practical applications such as UV light sensing and UV-based sterilization.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Sensors (Basel)
Año:
2024
Tipo del documento:
Article
País de afiliación:
Alemania
Pais de publicación:
Suiza