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Spatially Extended Charge Density Wave Switching by Nanoscale Local Manipulation in a VTe2 Monolayer.
Chazarin, Ulysse; Lezoualc'h, Mahé; Karn, Abhishek; Chou, Jyh-Ping; Pai, Woei Wu; Chacon, Cyril; Girard, Yann; Repain, Vincent; Bellec, Amandine; Rousset, Sylvie; González, César; Smogunov, Alexander; Lagoute, Jérôme; Dappe, Yannick J.
Afiliación
  • Chazarin U; Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, F-75013 Paris, France.
  • Lezoualc'h M; Center for Condensed Matter Science (CCMS), National Taiwan University, 11106 Taipei, Taiwan ROC.
  • Karn A; SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex, France.
  • Chou JP; Center for Condensed Matter Science (CCMS), National Taiwan University, 11106 Taipei, Taiwan ROC.
  • Pai WW; Department of Physics, National Changhua University of Education, 50007 Chuanghua City, Taiwan ROC.
  • Chacon C; Center for Condensed Matter Science (CCMS), National Taiwan University, 11106 Taipei, Taiwan ROC.
  • Girard Y; Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, F-75013 Paris, France.
  • Repain V; Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, F-75013 Paris, France.
  • Bellec A; Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, F-75013 Paris, France.
  • Rousset S; Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, F-75013 Paris, France.
  • González C; Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, F-75013 Paris, France.
  • Smogunov A; Departamento de Física de Materiales, Universidad Complutense de Madrid, E-28040 Madrid, Spain.
  • Lagoute J; Instituto de Magnetismo Aplicado UCM-ADIF, Vía de Servicio A-6, 900, E-28232 Las Rozas de Madrid, Spain.
  • Dappe YJ; SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex, France.
Nano Lett ; 24(11): 3470-3475, 2024 Mar 20.
Article en En | MEDLINE | ID: mdl-38451177
ABSTRACT
Monolayer transition metal dichalcogenide VTe2 exhibits multiple charge density wave (CDW) phases, mainly (4 × 4) and (4 × 1). Here we report facile dynamic and tens-of-nanometer scale switching between these CDW phases with gentle bias pulses in scanning tunneling microscopy. Bias pulses purposely stimulate a reversible random CDW symmetry change between the isotropic (4 × 4) and anisotropic (4 × 1) CDWs, as well as CDW phase slips and rotation. The switching threshold of ∼1.0 V is independent of bias polarity, and the switching rate varies linearly with the tunneling current. Density functional theory calculations indicate that a coherent CDW phase switching incurs an energy barrier of ∼2.0-3.0 eV per (4 × 4) unit cell. While there is a challenge in understanding the observed large-area CDW random fluttering, we provide some possible explanations. The ability to manipulate electronic CDW phases sheds new light on tailoring CDW properties on demand.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article País de afiliación: Francia Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article País de afiliación: Francia Pais de publicación: Estados Unidos