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New avenues for residual stress analysis in ultrathin atomic layer deposited free-standing membranes through release of micro-cantilevers.
Burgmann, S; Lid, M J; Johnsen, H J D; Vedvik, N P; Haugen, B; Provine, J; van Helvoort, A T J; Torgersen, J.
Afiliación
  • Burgmann S; Department of Mechanical and Industrial Engineering, NTNU, Trondheim, Norwegian University of Science and Technology, Norway.
  • Lid MJ; Department of Mechanical and Industrial Engineering, NTNU, Trondheim, Norwegian University of Science and Technology, Norway.
  • Johnsen HJD; Department of Mechanical and Industrial Engineering, NTNU, Trondheim, Norwegian University of Science and Technology, Norway.
  • Vedvik NP; Department of Mechanical and Industrial Engineering, NTNU, Trondheim, Norwegian University of Science and Technology, Norway.
  • Haugen B; Department of Mechanical and Industrial Engineering, NTNU, Trondheim, Norwegian University of Science and Technology, Norway.
  • Provine J; Aligned Carbon, Santa Clara, CA, USA.
  • van Helvoort ATJ; Department of Physics, NTNU, Trondheim, Norwegian University of Science and Technology, Norway.
  • Torgersen J; Chair of Materials Science, Department of Materials Engineering, TUM School of Engineering and Design, Technical University of Munich, Germany.
Heliyon ; 10(4): e26420, 2024 Feb 29.
Article en En | MEDLINE | ID: mdl-38434070
ABSTRACT
The fabrication of thinnest, yet undeformed membrane structures with nanometer resolution is a prerequisite for a variety of Microelectromechanical systems (MEMS). However, functionally relevant thin films are susceptible to growth-generated stress. To tune the performance and reach large aspect ratios, knowledge of the intrinsic material properties is indispensable. Here, we present a new method for stress evaluation through releasing defined micro-cantilever segments by focused ion beam (FIB) milling from a predefined free-standing membrane structure. Thereby, the cantilever segment is allowed to equilibrate to a stress-released state through measurable strain in the form of a resulting radius of curvature. This radius can be back-calculated to the residual stress state. The method was tested on a 20 nm and 50 nm thick tunnel-like ALD Image 1 membrane structure, revealing a significant amount of residual stress with 866 MPa and 6104 MPa, respectively. Complementary finite element analysis to estimate the stress distribution in the structure showed a 97% and 90% agreement in out-of-plane deflection for the 20 nm and 50 nm membranes, respectively. This work reveals the possibilities of releasing entire membrane segments from thin film membranes with a significant amount of residual stress and to use the resulting bending behavior for evaluating stress and strain by measuring their deformation.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Heliyon Año: 2024 Tipo del documento: Article País de afiliación: Noruega Pais de publicación: Reino Unido

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Heliyon Año: 2024 Tipo del documento: Article País de afiliación: Noruega Pais de publicación: Reino Unido