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Epitaxial Growth of Large-Scale 2D CrTe2 Films on Amorphous Silicon Wafers With Low Thermal Budget.
Zhang, Xiaoqian; Li, Yue; Lu, Qiangsheng; Xiang, Xueqiang; Sun, Xiaozhen; Tang, Chunli; Mahdi, Muntasir; Conner, Clayton; Cook, Jacob; Xiong, Yuzan; Inman, Jerad; Jin, Wencan; Liu, Chang; Cai, PeiYu; Santos, Elton J G; Phatak, Charudatta; Zhang, Wei; Gao, Nan; Niu, Wei; Bian, Guang; Li, Peng; Yu, Dapeng; Long, Shibing.
Afiliación
  • Zhang X; Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Li Y; Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China.
  • Lu Q; Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA.
  • Xiang X; Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA.
  • Sun X; Material Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
  • Tang C; School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China.
  • Mahdi M; School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China.
  • Conner C; Department of Electrical and Computer Engineering, Auburn University, Auburn, AL, 36849, USA.
  • Cook J; Department of Electrical and Computer Engineering, Auburn University, Auburn, AL, 36849, USA.
  • Xiong Y; Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA.
  • Inman J; Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA.
  • Jin W; Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC, 27599, USA.
  • Liu C; Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC, 27599, USA.
  • Cai P; Department of Physics, Oakland University, Rochester, MI, 48309, USA.
  • Santos EJG; Department of Electrical and Computer Engineering, Auburn University, Auburn, AL, 36849, USA.
  • Phatak C; Department of Physics, Auburn University, Auburn, AL, 36849, USA.
  • Zhang W; Shenzhen Institute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Gao N; Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, UK.
  • Niu W; Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, UK.
  • Bian G; Higgs Centre for Theoretical Physics, The University of Edinburgh, Edinburgh, EH9 3FD, UK.
  • Li P; Donostia International Physics Center (DIPC), Donostia-San Sebastián, 20018, Basque Country, Spain.
  • Yu D; Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA.
  • Long S; Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA.
Adv Mater ; 36(24): e2311591, 2024 Jun.
Article en En | MEDLINE | ID: mdl-38426690
ABSTRACT
2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 °C) and difficulties in integrating them with standard complementary metal-oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO2) and silicon nitride (SiNx). Here, a seeded growth technique for crystallizing CrTe2 films on amorphous SiNx/Si and SiO2/Si substrates with a low thermal budget is presented. This fabrication process optimizes large-scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo-oersted, attributed to weak intergranular exchange coupling. Field-driven Néel-type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe2 devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single-crystalline counterparts. Current-assisted magnetization switching, enabled by a substantial spin-orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 × 107 ℏ/2e Ω⁻¹ m⁻¹), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large-scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2024 Tipo del documento: Article País de afiliación: China Pais de publicación: Alemania
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2024 Tipo del documento: Article País de afiliación: China Pais de publicación: Alemania