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Scalable and efficient grating couplers on low-index photonic platforms enabled by cryogenic deep silicon etching.
Lomonte, Emma; Stappers, Maik; Krämer, Linus; Pernice, Wolfram H P; Lenzini, Francesco.
Afiliación
  • Lomonte E; Institute of Physics, University of Münster, Wilhelm-Klemm-Straße 10, 48149, Münster, Germany.
  • Stappers M; CeNTech-Center for Nanotechnology, Heisenbergstraße 11, 48149, Münster, Germany.
  • Krämer L; SoN-Center for Soft Nanoscience, Busso-Peus-Straße 10, 48149, Münster, Germany.
  • Pernice WHP; Institute of Physics, University of Münster, Wilhelm-Klemm-Straße 10, 48149, Münster, Germany.
  • Lenzini F; CeNTech-Center for Nanotechnology, Heisenbergstraße 11, 48149, Münster, Germany.
Sci Rep ; 14(1): 4256, 2024 Feb 21.
Article en En | MEDLINE | ID: mdl-38383577
ABSTRACT
Efficient fiber-to-chip couplers for multi-port access to photonic integrated circuits are paramount for a broad class of applications, ranging, e.g., from telecommunication to photonic computing and quantum technologies. Grating-based approaches are often desirable for providing out-of-plane access to the photonic circuits. However, on photonic platforms characterized by a refractive index ≃ 2 at telecom wavelength, such as silicon nitride or thin-film lithium niobate, the limited scattering strength has thus far hindered the achievement of coupling efficiencies comparable to the ones attainable in silicon photonics. Here we present a flexible strategy for the realization of highly efficient grating couplers on such low-index photonic platforms. To simultaneously reach a high scattering efficiency and a near-unitary modal overlap with optical fibers, we make use of self-imaging gratings designed with a negative diffraction angle. To ensure high directionality of the diffracted light, we take advantage of a metal back-reflector patterned underneath the grating structure by cryogenic deep reactive ion etching of the silicon handle. Using silicon nitride as a testbed material, we experimentally demonstrate coupling efficiency up to - 0.55 dB in the telecom C-band with high chip-scale device yield.

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2024 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Reino Unido

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2024 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Reino Unido