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GaN atomic electric fields from a segmented STEM detector: Experiment and simulation.
Grieb, Tim; Krause, Florian F; Mehrtens, Thorsten; Mahr, Christoph; Gerken, Beeke; Schowalter, Marco; Freitag, Bert; Rosenauer, Andreas.
Afiliación
  • Grieb T; Institute of Solid State Physics, University of Bremen, Bremen, Germany.
  • Krause FF; Institute of Solid State Physics, University of Bremen, Bremen, Germany.
  • Mehrtens T; Institute of Solid State Physics, University of Bremen, Bremen, Germany.
  • Mahr C; Institute of Solid State Physics, University of Bremen, Bremen, Germany.
  • Gerken B; Institute of Solid State Physics, University of Bremen, Bremen, Germany.
  • Schowalter M; Institute of Solid State Physics, University of Bremen, Bremen, Germany.
  • Freitag B; Thermo Fisher Scientific, Eindhoven, The Netherlands.
  • Rosenauer A; Institute of Solid State Physics, University of Bremen, Bremen, Germany.
J Microsc ; 295(2): 140-146, 2024 Aug.
Article en En | MEDLINE | ID: mdl-38372408
ABSTRACT
Atomic electric fields in a thin GaN sample are measured with the centre-of-mass approach in 4D-scanning transmission electron microscopy (4D-STEM) using a 12-segmented STEM detector in a Spectra 300 microscope. The electric fields, charge density and potential are compared to simulations and an experimental measurement using a pixelated 4D-STEM detector. The segmented detector benefits from a high recording speed, which enables measurements at low radiation doses. However, there is measurement uncertainty due to the limited number of segments analysed in this study.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Microsc Año: 2024 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Reino Unido
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Microsc Año: 2024 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Reino Unido